IRFP1405PBF vs IRFB3207ZPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFP1405PBF disebabkan oleh Infineon dan IRFB3207ZPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFP1405PBF | IRFB3207ZPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | HEXFET (Planar cell) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-to-Source Voltage (V_DSS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc=25°C | 95 A | — |
| Continuous Drain Current (I_D) at Tc=100°C | [DATA_NEEDED: I_D at Tc=100°C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) at VGS=10V | 5.3 mΩ (typical per distributor listing) | — |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typical] | — |
| Maximum Power Dissition at Tc=25°C | 310 W | — |
| Maximum Junction Temperature | 175 °C | — |
| Gambaran Suhu Operasi | -55 °C to +175 °C | — |
| Kemasan | TO-247AC (through-hole) | TO-220AB (3-lead through-hole) |
| Jenis Pemasangan | Through Hole | Through Hole |
| Kiraan Pin | 3 (Gate, Drain, Source) | — |
| Status RoHS | Compliant (Pb-free suffix PBF) | — |
| Qualification | JEDEC standard (industrial grade) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| Suhu Hubungan Operasi | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| Aras MSL | — | N/A (through-hole) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |