IRFP1405PBF vs IRFB3207ZPBF Karşılaştırma
Ayrıntılı yan yana karşılaştırma IRFP1405PBF tarafından Infineon ve IRFB3207ZPBF tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | IRFP1405PBF | IRFB3207ZPBF |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | HEXFET (Planar cell) | N-Channel MOSFET (HEXFET, Z-suffix ruggedized) |
| Drain-to-Source Voltage (V_DSS) | 55 V | — |
| Continuous Drain Current (I_D) at Tc=25°C | 95 A | — |
| Continuous Drain Current (I_D) at Tc=100°C | [DATA_NEEDED: I_D at Tc=100°C] | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance R_DS(on) at VGS=10V | 5.3 mΩ (typical per distributor listing) | — |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typical] | — |
| Maximum Power Dissition at Tc=25°C | 310 W | — |
| Maximum Junction Temperature | 175 °C | — |
| İşletim Sıcaklığı Aralığı | -55 °C to +175 °C | — |
| Paket | TO-247AC (through-hole) | TO-220AB (3-lead through-hole) |
| Montaj Türü | Through Hole | Through Hole |
| Pin Sayısı | 3 (Gate, Drain, Source) | — |
| RoHS Durumu | Compliant (Pb-free suffix PBF) | — |
| Qualification | JEDEC standard (industrial grade) | — |
| Manufacturer | — | Infineon Technologies (formerly International Rectifier) |
| Part Number | — | IRFB3207ZPBF |
| Series | — | HEXFET |
| Drain-Source Voltage (VDS) | — | 75 V |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Silicon-Limited Drain Current | — | 170 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current value] |
| On-Resistance RDS(on) typ @ VGS=10V | — | 3.3 mOhm |
| On-Resistance RDS(on) max @ VGS=10V | — | 4.1 mOhm |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: typical VGS(th)] |
| Total Gate Charge Qg | — | [DATA_NEEDED: total gate charge] |
| Power Dissition (PD) at TC=25C | — | 300 W |
| İşletim Jant Sıcaklığı | — | -55 C to +175 C |
| Lead-Free / RoHS | — | Yes (PBF suffix = lead-free) |
| MSL Seviyesi | — | N/A (through-hole) |
| Avalanche Rated | — | Yes (improved Z-variant ruggedness) |