IRFR220NTRPBF vs IRFR220NPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR220NTRPBF disebabkan oleh Infineon dan IRFR220NPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRFR220NTRPBF IRFR220NPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel MOSFET N-Channel MOSFET, Metal Oxide
Technology HEXFET (IR MOSFET) HEXFET (Planar)
Drain-to-Source Voltage (VDS) 200 V 200 V
Continuous Drain Current (ID) at TC=25°C 5 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
Gate-to-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] [DATA_NEEDED: gate threshold voltage]
On-Resistance Rds(on) max at VGS=10V 600 milliohm —
Total Gate Charge (Qg) 15 nC (typical per Mouser listing) [DATA_NEEDED: total gate charge]
Maximum Power Dissition (PD) at TC=25°C 43 W —
Suhu Hubungan Operasi -55°C to +150°C —
Kemasan TO-252AA (DPAK), surface mount —
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 1 (unlimited floor life per JEDEC J-STD-020) 1 (per JEDEC J-STD-020)
Status RoHS Compliant (PBF suffix) —
Avalanche Energy Rated Yes (fully characterized) Yes (per datasheet characterization)
Lead-Free Yes (PBF suffix indicates Pb-free plating) —
Continuous Drain Current (ID) at TC=25C — 5 A
Power Dissipation (PD) at TC=25C — 43 W
Static Drain-Source On-Resistance (RDS(on)) max — 0.6 ohm at VGS = 10 V
Kemasan / Case — TO-252AA (DPAK)
Gambaran Suhu Operasi — -55C to +150C (junction)
Lead-Free / RoHS — Yes, lead-free (PBF suffix)
Kiraan Pin — 3 (Gate, Drain, Source) plus tab

Laporan Datasheet & Sumber

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