IRFR6215TRLPBF vs IRFR6215TRPBF Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci IRFR6215TRLPBF disebabkan oleh Infineon dan IRFR6215TRPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | IRFR6215TRLPBF | IRFR6215TRPBF |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | P-Channel | P-Channel |
| Drain-Source Voltage (VDS) | -150 V | -150 V |
| Continuous Drain Current (ID) at Tc=25C | -13 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current value] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| RDS(on) max at VGS=-10V | 580 mOhm | — |
| Total Gate Charge (Qg) typ | 44 nC | — |
| Power Dissipation (PD) at Tc=25C | 110 W | — |
| Maximum Operating Junction Temperature | 175 C | — |
| Kemasan | TO-252AA (DPAK) | TO-252AA (DPAK), surface mount |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Technology | HEXFET Power MOSFET (Fifth Generation) | HEXFET (5th generation IR MOSFET) |
| Aras MSL | 1 | MSL1 |
| Status RoHS | Compliant | Compliant (Lead-Free PBF suffix) |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID, Tc=25C) | — | -13 A |
| Power Dissipation (PD, Tc=25C) | — | 110 W |
| On-Resistance (RDS(on) max) | — | 0.295 ohm at VGS = -10 V |
| Gate-Source Voltage (VGS max) | — | [DATA_NEEDED: gate-source voltage rating] |
| Gate Threshold Voltage (VGS(th) typ) | — | [DATA_NEEDED: VGS(th) typical] |
| Total Gate Charge (Qg) | — | 44 nC |
| Gambaran Suhu Operasi | — | -55C to +175C |
| REACH Status | — | Compliant |
| Manufacturer | — | Infineon (formerly International Rectifier) |