IRFR6215TRLPBF vs IRFR6215TRPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFR6215TRLPBF sa pamamagitan ng Infineon at IRFR6215TRPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFR6215TRLPBF IRFR6215TRPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity P-Channel P-Channel
Drain-Source Voltage (VDS) -150 V -150 V
Continuous Drain Current (ID) at Tc=25C -13 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current value] —
Gate-Source Voltage (VGS) max ±20 V —
RDS(on) max at VGS=-10V 580 mOhm —
Total Gate Charge (Qg) typ 44 nC —
Power Dissipation (PD) at Tc=25C 110 W —
Maximum Operating Junction Temperature 175 C —
Packhaging TO-252AA (DPAK) TO-252AA (DPAK), surface mount
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET Power MOSFET (Fifth Generation) HEXFET (5th generation IR MOSFET)
Level ng MSL 1 MSL1
Tindminan RoHS Compliant Compliant (Lead-Free PBF suffix)
Lead-Free Yes —
Continuous Drain Current (ID, Tc=25C) — -13 A
Power Dissipation (PD, Tc=25C) — 110 W
On-Resistance (RDS(on) max) — 0.295 ohm at VGS = -10 V
Gate-Source Voltage (VGS max) — [DATA_NEEDED: gate-source voltage rating]
Gate Threshold Voltage (VGS(th) typ) — [DATA_NEEDED: VGS(th) typical]
Total Gate Charge (Qg) — 44 nC
Hanay ng Temperature na Operasyon — -55C to +175C
REACH Status — Compliant
Manufacturer — Infineon (formerly International Rectifier)

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