IRLS3034TRLPBF vs BSC027N10NS5ATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRLS3034TRLPBF disebabkan oleh Infineon dan BSC027N10NS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRLS3034TRLPBF BSC027N10NS5ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif NRND
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25°C 195 A —
Pulsed Drain Current (IDM) 343 A 194 A
RDS(on) Max at VGS=10V, ID=195A 1.7 mΩ —
Gate Threshold Voltage (VGS(th)) 2.5 V (typical) —
Total Gate Charge (Qg) 108 nC —
Power Dissipation (PD) at TC=25°C 375 W —
Gambaran Suhu Operasi -40°C to +175°C (TJ) [DATA_NEEDED: Tj min/max]
Kemasan D2PAK (TO-263), Surface Mount PG-TSON-8-3 (SuperSO8 5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Technology IR HEXFET (planar N-channel) OptiMOS 5 (100V)
Lead-Free Yes (PBF suffix) —
Status RoHS Compliant Compliant
Aras MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Shipping Format Tape and Reel, 7-inch (TRL) —
Manufacturer — Infineon Technologies
Part Number — BSC027N10NS5ATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 214 W
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga