IRLS3034TRLPBF vs BSC027N10NS5ATMA1 比較

詳細並排比較 IRLS3034TRLPBF 由 Infineon 與 BSC027N10NS5ATMA1 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

規格比較

參數 IRLS3034TRLPBF BSC027N10NS5ATMA1
品牌 Infineon Infineon
類別 MOSFETs MOSFETs
生命週期狀態 啟用中 NRND
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25°C 195 A —
Pulsed Drain Current (IDM) 343 A 194 A
RDS(on) Max at VGS=10V, ID=195A 1.7 mΩ —
Gate Threshold Voltage (VGS(th)) 2.5 V (typical) —
Total Gate Charge (Qg) 108 nC —
Power Dissipation (PD) at TC=25°C 375 W —
工作溫度範圍 -40°C to +175°C (TJ) [DATA_NEEDED: Tj min/max]
封裝 D2PAK (TO-263), Surface Mount PG-TSON-8-3 (SuperSO8 5x6 mm)
安裝類型 Surface Mount Surface Mount
Technology IR HEXFET (planar N-channel) OptiMOS 5 (100V)
Lead-Free Yes (PBF suffix) —
RoHS 狀態 Compliant Compliant
MSL 等級 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Shipping Format Tape and Reel, 7-inch (TRL) —
Manufacturer — Infineon Technologies
Part Number — BSC027N10NS5ATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 214 W
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

資料表與資源

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