IRLS3034TRLPBF vs BSC027N10NS5ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRLS3034TRLPBF sa pamamagitan ng Infineon at BSC027N10NS5ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRLS3034TRLPBF BSC027N10NS5ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo NRND
FET Type N-Channel MOSFET, Metal Oxide —
Drain-to-Source Voltage (VDS) 40 V —
Continuous Drain Current (ID) at TC=25°C 195 A —
Pulsed Drain Current (IDM) 343 A 194 A
RDS(on) Max at VGS=10V, ID=195A 1.7 mΩ —
Gate Threshold Voltage (VGS(th)) 2.5 V (typical) —
Total Gate Charge (Qg) 108 nC —
Power Dissipation (PD) at TC=25°C 375 W —
Hanay ng Temperature na Operasyon -40°C to +175°C (TJ) [DATA_NEEDED: Tj min/max]
Packhaging D2PAK (TO-263), Surface Mount PG-TSON-8-3 (SuperSO8 5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Technology IR HEXFET (planar N-channel) OptiMOS 5 (100V)
Lead-Free Yes (PBF suffix) —
Tindminan RoHS Compliant Compliant
Level ng MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Shipping Format Tape and Reel, 7-inch (TRL) —
Manufacturer — Infineon Technologies
Part Number — BSC027N10NS5ATMA1
Channel Type — N-Channel
Drain-Source Voltage (VDS) — 100 V
Gate-Source Voltage (VGS) Max — [DATA_NEEDED: VGS max rating]
Continuous Drain Current (ID) at Ta — 23 A
Continuous Drain Current (ID) at Tc — 100 A
On-Resistance RDS(on) Max at VGS=10V — 2.7 mOhm
Power Dissipation (Ta) — 3 W
Power Dissipation (Tc) — 214 W
Qualification — Industrial (AEC-Q101 variant BSC027N10NS5 exists separately)

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