IRS21867STRPBF vs IR2109SPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IRS21867STRPBF disebabkan oleh Infineon dan IR2109SPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IRS21867STRPBF IR2109SPBF
Merek Infineon Infineon
Kategori Power MOSFET Drivers Power MOSFET Drivers
Status Lingkungan Hidup Aktif Aktif
Tetstruktur High-Side and Low-Side (Half-Bridge) —
Offset Voltage (High-Side, max) 600 V —
Output Current (Source/Sink, typical) 4 A / 4 A —
Supply Voltage VCC 10 V to 20 V —
Bootstrap Supply VBS up to VCC + 600 V (floating) —
Input Logic Compatibility 3.3 V and 5 V CMOS / TTL 3.3 V / 5 V CMOS / TTL
Rise Time (typ, 1 nF load) 22 ns —
Fall Time (typ, 1 nF load) 18 ns —
Turn-On Propagation Delay (typ) 170 ns —
Turn-Off Propagation Delay (typ) 170 ns —
Undervoltage Lockout Yes (VCC and VBS) Yes (VCC)
Operating Temperature Range (TJ) -40C to +150C —
Kemasan 8-SOIC (SOIC-8, 8-pin SOIC N T/R) SOIC-8
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL 2 —
Status RoHS Compliant Compliant
Lead-Free Status Lead Free —
Channel Count 2 (1 high-side + 1 low-side) —
Input Type Non-Inverting (HIN, LIN) —
Driver Configuration — Half-Bridge
Number of Drivers — 2 (high-side + low-side)
High-Side Voltage Tolerance — 600 V
Supply Voltage (VCC) — 10 V to 20 V
Source Current (typical) — 0.2 A
Sink Current (typical) — 0.35 A
Turn-On Propagation Delay — 150 ns
Turn-Off Propagation Delay — 150 ns
Masa Pertambahan — 200 ns
Masa jatuh — 50 ns
Quiescent VCC Current — 1 mA
Bootstrap Diode — Integrated
Suhu Hubungan Operasi — -40 C to +150 C

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga