IRS21867STRPBF vs IR2109SPBF Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IRS21867STRPBF sa pamamagitan ng Infineon at IR2109SPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IRS21867STRPBF - 600V 4A Hi/Lo Side Gate Driver SOIC-8 | Infineon
IRS21867STRPBF ✓ Nakahanda
Pagsanggunian na paghahambing
| Parametro | IRS21867STRPBF | IR2109SPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | Power MOSFET Drivers | Power MOSFET Drivers |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Topolohiya | High-Side and Low-Side (Half-Bridge) | — |
| Offset Voltage (High-Side, max) | 600 V | — |
| Output Current (Source/Sink, typical) | 4 A / 4 A | — |
| Supply Voltage VCC | 10 V to 20 V | — |
| Bootstrap Supply VBS | up to VCC + 600 V (floating) | — |
| Input Logic Compatibility | 3.3 V and 5 V CMOS / TTL | 3.3 V / 5 V CMOS / TTL |
| Rise Time (typ, 1 nF load) | 22 ns | — |
| Fall Time (typ, 1 nF load) | 18 ns | — |
| Turn-On Propagation Delay (typ) | 170 ns | — |
| Turn-Off Propagation Delay (typ) | 170 ns | — |
| Undervoltage Lockout | Yes (VCC and VBS) | Yes (VCC) |
| Operating Temperature Range (TJ) | -40C to +150C | — |
| Packhaging | 8-SOIC (SOIC-8, 8-pin SOIC N T/R) | SOIC-8 |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Level ng MSL | 2 | — |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free Status | Lead Free | — |
| Channel Count | 2 (1 high-side + 1 low-side) | — |
| Input Type | Non-Inverting (HIN, LIN) | — |
| Driver Configuration | — | Half-Bridge |
| Number of Drivers | — | 2 (high-side + low-side) |
| High-Side Voltage Tolerance | — | 600 V |
| Supply Voltage (VCC) | — | 10 V to 20 V |
| Source Current (typical) | — | 0.2 A |
| Sink Current (typical) | — | 0.35 A |
| Turn-On Propagation Delay | — | 150 ns |
| Turn-Off Propagation Delay | — | 150 ns |
| Oras ng Pagtaas | — | 200 ns |
| Time ng Pagbaba | — | 50 ns |
| Quiescent VCC Current | — | 1 mA |
| Bootstrap Diode | — | Integrated |
| Temperature ng Junction na Operasyon | — | -40 C to +150 C |