K4A8G085WB-BCRC vs H5AN8G8NDJR-XNC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WB-BCRC disebabkan oleh Samsung Electronics dan H5AN8G8NDJR-XNC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ AktifPengandingan Spesifikasi
| Parametr | K4A8G085WB-BCRC | H5AN8G8NDJR-XNC |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasi | 1G x 8 | — |
| Kadar Data | 2400 Mbps | 3200 MT/s (DDR4-3200) |
| Tegangan Pemberi Arus | 1.2 V | — |
| Suhu Operasi | 0°C to 85°C | — |
| Kemasan | 78-ball FBGA | FBGA-78 (7.5 x 11 mm) |
| Number of Terminals | 78 | — |
| Refresh Cycles | 8192 | — |
| Access Time | 0.175 ns | — |
| Technology | CMOS | — |
| Burst Length | 8 and 4 | — |
| On-Die Termination | Yes | — |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | — |
| RoHS | Compliant | Compliant |
| Saiz Ingatan | — | 8 Gbit (1 G x 8) |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V (nominal 1.2 V) |
| I/O Voltage (VDDQ) | — | 1.14 V to 1.26 V (nominal 1.2 V) |
| Operating Temperature (TC) | — | 0°C to +95°C |
| Jenis Pemasangan | — | Surface Mount |
| Memory Organization | — | 1G x 8 |
| Antaramuka | — | Parallel |
| Clock Frequency | — | 1.6 GHz (I/O clock) |
| Lead-Free | — | Yes |
| Packaging | — | Tray |
| Status | — | Active |