K4A8G085WB-BCRC vs H5AN8G8NDJR-XNC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WB-BCRC sa pamamagitan ng Samsung Electronics at H5AN8G8NDJR-XNC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G085WB-BCRC - 8Gb DDR4 SDRAM 1Gx8 2400Mbps | Samsung
K4A8G085WB-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G085WB-BCRC | H5AN8G8NDJR-XNC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organisasyon | 1G x 8 | — |
| Rate ng Data | 2400 Mbps | 3200 MT/s (DDR4-3200) |
| Volte ng Pagbibigay | 1.2 V | — |
| Temperature na Operasyon | 0°C to 85°C | — |
| Packhaging | 78-ball FBGA | FBGA-78 (7.5 x 11 mm) |
| Number of Terminals | 78 | — |
| Refresh Cycles | 8192 | — |
| Access Time | 0.175 ns | — |
| Technology | CMOS | — |
| Burst Length | 8 and 4 | — |
| On-Die Termination | Yes | — |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | — |
| RoHS | Compliant | Compliant |
| Laki ng Memory | — | 8 Gbit (1 G x 8) |
| Supply Voltage (VDD) | — | 1.14 V to 1.26 V (nominal 1.2 V) |
| I/O Voltage (VDDQ) | — | 1.14 V to 1.26 V (nominal 1.2 V) |
| Operating Temperature (TC) | — | 0°C to +95°C |
| Uri ng Pagpapasok | — | Surface Mount |
| Memory Organization | — | 1G x 8 |
| Interface | — | Parallel |
| Clock Frequency | — | 1.6 GHz (I/O clock) |
| Lead-Free | — | Yes |
| Packaging | — | Tray |
| Status | — | Active |