K4A8G085WC-BCPB vs K4A8G085WC-BIWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BCPB disebabkan oleh Samsung Electronics dan K4A8G085WC-BIWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G085WC-BCPB - 8Gb DDR4 SDRAM 2133Mbps 1.2V | Samsung
K4A8G085WC-BCPB ✗ Akhir Hayat
Pengandingan Spesifikasi
| Parametr | K4A8G085WC-BCPB | K4A8G085WC-BIWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Akhir Hidup | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Kadar Data | 2133 Mbps | 3200 Mbps |
| Tegangan Pemberi Arus | 1.2 V | — |
| Suhu Operasi | 0 C to +85 C | — |
| Kemasan | 78FBGA | 78-FBGA |
| Number of Terminals | 78 | — |
| Maximum Seated Height | 1.2 mm | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Speed Grade | DDR4-2133 | — |
| Ciri-ciri | Auto precharge, asynchronous reset, CRC, ZQ calibration, dynamic ODT, data mask | — |
| Refresh | [DATA_NEEDED: refresh rate 1x/2x] | Auto-refresh, self-refresh |
| Latensi CAS | [DATA_NEEDED: CAS latency] | 22 (CL22) |
| Status RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Die Revision | [DATA_NEEDED: die revision] | — |
| Standard Package Quantity | [DATA_NEEDED: standard package quantity] | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Supply Voltage (VDDQ) | — | 1.2 V |
| Gambaran Suhu Operasi | — | -40°C to +95°C |
| Antaramuka | — | POD-12 |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Lead-Free | — | Yes |