K4A8G085WC-BCRC vs H5AN8G8NAFR-RDC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BCRC disebabkan oleh Samsung Electronics dan H5AN8G8NAFR-RDC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G085WC-BCRC | H5AN8G8NAFR-RDC |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gbit |
| Organisasi | 1G x 8 | 1G x 8 (x8) |
| Tegangan Pemberi Arus | 1.2 V | — |
| Kadar Data | 2400 Mbps (DDR4-2400) | 2666 MT/s (per -R speed grade suffix) |
| Kemasan | 78-ball FBGA (TFBGA) | 78-ball FBGA |
| Terminal Pitch | 0.8 mm | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | 0C to +95C | [DATA_NEEDED: Operating Temperature range] |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| Data Mask Function | Yes | — |
| Status RoHS | Compliant | Compliant |
| Refresh | Auto/Self refresh | — |
| Antaramuka | — | DDR4 (Double Data Rate 4) |
| Speed Grade | — | -RDC (DDR4-2666 class) |
| Core Supply Voltage (VDD) | — | 1.2 V |
| I/O Supply Voltage (VDDQ) | — | 1.2 V |
| Wordline Supply (VPP) | — | 2.5 V |
| Banks / Bank Groups | — | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Burst Length | — | 8 (BL8) |
| Latensi CAS | — | [DATA_NEEDED: CAS Latency] |
| Lead-Free | — | Yes |
| Boson Bebas | — | Yes |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |