K4A8G085WC-BCRC vs H5AN8G8NAFR-RDC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WC-BCRC sa pamamagitan ng Samsung Electronics at H5AN8G8NAFR-RDC sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4A8G085WC-BCRC | H5AN8G8NAFR-RDC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gbit |
| Organisasyon | 1G x 8 | 1G x 8 (x8) |
| Volte ng Pagbibigay | 1.2 V | — |
| Rate ng Data | 2400 Mbps (DDR4-2400) | 2666 MT/s (per -R speed grade suffix) |
| Packhaging | 78-ball FBGA (TFBGA) | 78-ball FBGA |
| Terminal Pitch | 0.8 mm | — |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | 0C to +95C | [DATA_NEEDED: Operating Temperature range] |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| Data Mask Function | Yes | — |
| Tindminan RoHS | Compliant | Compliant |
| Refresh | Auto/Self refresh | — |
| Interface | — | DDR4 (Double Data Rate 4) |
| Speed Grade | — | -RDC (DDR4-2666 class) |
| Core Supply Voltage (VDD) | — | 1.2 V |
| I/O Supply Voltage (VDDQ) | — | 1.2 V |
| Wordline Supply (VPP) | — | 2.5 V |
| Banks / Bank Groups | — | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Burst Length | — | 8 (BL8) |
| Latensya ng CAS | — | [DATA_NEEDED: CAS Latency] |
| Lead-Free | — | Yes |
| Wala sa Halogen | — | Yes |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |