K4A8G085WC-BCRC vs H5AN8G8NAFR-RDC 比較
詳細並排比較 K4A8G085WC-BCRC 由 Samsung Electronics 與 H5AN8G8NAFR-RDC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | K4A8G085WC-BCRC | H5AN8G8NAFR-RDC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 類別 | DRAM | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gbit |
| 組織 | 1G x 8 | 1G x 8 (x8) |
| 供應電壓 | 1.2 V | — |
| 資料速率 | 2400 Mbps (DDR4-2400) | 2666 MT/s (per -R speed grade suffix) |
| 封裝 | 78-ball FBGA (TFBGA) | 78-ball FBGA |
| Terminal Pitch | 0.8 mm | — |
| 安裝類型 | Surface Mount | Surface Mount |
| 工作溫度 | 0C to +95C | [DATA_NEEDED: Operating Temperature range] |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Die Termination | Yes | — |
| Data Mask Function | Yes | — |
| RoHS 狀態 | Compliant | Compliant |
| Refresh | Auto/Self refresh | — |
| 介面 | — | DDR4 (Double Data Rate 4) |
| Speed Grade | — | -RDC (DDR4-2666 class) |
| Core Supply Voltage (VDD) | — | 1.2 V |
| I/O Supply Voltage (VDDQ) | — | 1.2 V |
| Wordline Supply (VPP) | — | 2.5 V |
| Banks / Bank Groups | — | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Burst Length | — | 8 (BL8) |
| CAS 延遲 | — | [DATA_NEEDED: CAS Latency] |
| Lead-Free | — | Yes |
| 無鹵素 | — | Yes |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |