K4A8G085WC-BCWE vs H5AN4G8NBJR-UHI Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BCWE disebabkan oleh Samsung Electronics dan H5AN4G8NBJR-UHI disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G085WC-BCWE | H5AN4G8NBJR-UHI |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | In Stock | — |
| Harga Unit (USD) | $7.38 | — |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 4 Gbit |
| Organisasi | 1G x 8 | 512M x 8 |
| Kadar Data | 3200 Mbps (DDR4-3200) | 2400 MT/s |
| Tegangan Pemberi Arus | 1.2 V | — |
| Suhu Operasi | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Kemasan | 78FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | DDR4 (parallel, double data rate) | JEDEC DDR4 SDRAM |
| Application Class | Computing / Embedded main memory | — |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) | — |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) | — |
| Status RoHS | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Refresh | Standard DDR4 refresh mechanisms | Self-refresh and auto-refresh support |
| On-Die Termination | Yes (DDR4 ODT) | — |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Supply Voltage (VDD) | — | 1.2 V |
| Grade | — | Industrial (-UHI suffix) |
| Bank Architecture | — | DDR4 bank group architecture |
| Termination | — | On-die termination (ODT) |
| Latensi CAS | — | [DATA_NEEDED: CAS latency at DDR4-2400] |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |