K4A8G085WC-BCWE vs H5AN4G8NBJR-UHI Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G085WC-BCWE sa pamamagitan ng Samsung Electronics at H5AN4G8NBJR-UHI sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4A8G085WC-BCWE | H5AN4G8NBJR-UHI |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $7.38 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 4 Gbit |
| Organisasyon | 1G x 8 | 512M x 8 |
| Rate ng Data | 3200 Mbps (DDR4-3200) | 2400 MT/s |
| Volte ng Pagbibigay | 1.2 V | — |
| Temperature na Operasyon | 0C to +85C | [DATA_NEEDED: operating temperature range] |
| Packhaging | 78FBGA | FBGA-78 (78-ball fine-pitch BGA) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Interface | DDR4 (parallel, double data rate) | JEDEC DDR4 SDRAM |
| Application Class | Computing / Embedded main memory | — |
| Manufacturer | Samsung Electronics | — |
| Bank Group Architecture | DDR4 bank groups (8n prefetch) | — |
| Speed Bin Suffix | -BCWE (DDR4-3200, commercial temp) | — |
| Tindminan RoHS | Compliant (per JLCPCB listing) | [DATA_NEEDED: RoHS status] |
| Refresh | Standard DDR4 refresh mechanisms | Self-refresh and auto-refresh support |
| On-Die Termination | Yes (DDR4 ODT) | — |
| Speed Grade | — | DDR4-2400 (PC4-19200) |
| Supply Voltage (VDD) | — | 1.2 V |
| Grade | — | Industrial (-UHI suffix) |
| Bank Architecture | — | DDR4 bank group architecture |
| Termination | — | On-die termination (ODT) |
| Latensya ng CAS | — | [DATA_NEEDED: CAS latency at DDR4-2400] |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |