K4A8G085WC-BIWE vs YZ48G08V-F9HPI-M Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4A8G085WC-BIWE disebabkan oleh Samsung Electronics dan YZ48G08V-F9HPI-M disebabkan oleh Loongtion. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4A8G085WC-BIWE | YZ48G08V-F9HPI-M |
|---|---|---|
| Merek | Samsung Electronics | Loongtion |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 1G x 8 |
| Kadar Data | 3200 Mbps | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V | — |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Gambaran Suhu Operasi | -40°C to +95°C | -40°C to +85°C |
| Kemasan | 78-FBGA | — |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Antaramuka | POD-12 | Parallel |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Latensi CAS | 22 (CL22) | [DATA_NEEDED: CAS Latency] |
| Refresh | Auto-refresh, self-refresh | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Tegangan Pemberi Arus | — | 1.2 V |
| Package Type | — | FBGA78 |
| Row Cycle Time (tRC) | — | [DATA_NEEDED: tRC] |
| Refresh Cycle Time (tRFC) | — | [DATA_NEEDED: tRFC] |
| REACH Status | — | Compliant |
| AEC-Q100 | — | Not Applicable |