K4AAG165WM-BCTD vs K4AAG165WM-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4AAG165WM-BCTD disebabkan oleh Samsung Electronics dan K4AAG165WM-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4AAG165WM-BCTD | K4AAG165WM-BCWE |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | Memory ICs | DRAM |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Organisasi | 1G x 16 | 256M x 16 (1G x 16) |
| Speed | 2666 Mbps | — |
| Tegangan Pemberi Arus | 1.2 V (1.14 V to 1.26 V) | — |
| Suhu Operasi | 0C to +85C | [DATA_NEEDED: temperature range for WM-BCWE] |
| Kemasan | 96FBGA (96-ball Fine-Pitch Ball Grid Array) | 78-ball FBGA |
| Antaramuka | SSTL-12 | Parallel (DDR4) |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Data Mask | Yes | — |
| Jenis Pemasangan | Surface Mount (BGA solder reflow) | Surface Mount |
| Status RoHS | RoHS (per LCSC listing) | Compliant |
| Kadar Data | — | 3200 Mbps |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Access Time (Clock Cycle Time) | — | [DATA_NEEDED: tCK for BCWE bin] |
| Latensi CAS | — | [DATA_NEEDED: CL at 3200 Mbps] |
| Bank Groups | — | 4 (x16 configuration) |
| Burst Length | — | 8 |
| Die Revision | — | W (WM suffix) |
| Operating Frequency | — | 1600 MHz (DDR, 3200 Mbps) |