K4AAG165WM-BCTD vs K4AAG165WM-BCWE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4AAG165WM-BCTD sa pamamagitan ng Samsung Electronics at K4AAG165WM-BCWE sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4AAG165WM-BCTD - 16Gb DDR4 SDRAM 2666Mbps | Samsung
K4AAG165WM-BCTD ✓ NakahandaSamsung Electronics
K4AAG165WM-BCWE - 16Gb DDR4-3200 SDRAM x16 | Samsung
K4AAG165WM-BCWE ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4AAG165WM-BCTD | K4AAG165WM-BCWE |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | DRAM |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 16 Gb | 16 Gbit |
| Organisasyon | 1G x 16 | 256M x 16 (1G x 16) |
| Speed | 2666 Mbps | — |
| Volte ng Pagbibigay | 1.2 V (1.14 V to 1.26 V) | — |
| Temperature na Operasyon | 0C to +85C | [DATA_NEEDED: temperature range for WM-BCWE] |
| Packhaging | 96FBGA (96-ball Fine-Pitch Ball Grid Array) | 78-ball FBGA |
| Interface | SSTL-12 | Parallel (DDR4) |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| CRC Function | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| Data Mask | Yes | — |
| Uri ng Pagpapasok | Surface Mount (BGA solder reflow) | Surface Mount |
| Tindminan RoHS | RoHS (per LCSC listing) | Compliant |
| Rate ng Data | — | 3200 Mbps |
| Supply Voltage VDD | — | 1.2 V |
| Supply Voltage VDDQ | — | 1.2 V |
| Access Time (Clock Cycle Time) | — | [DATA_NEEDED: tCK for BCWE bin] |
| Latensya ng CAS | — | [DATA_NEEDED: CL at 3200 Mbps] |
| Bank Groups | — | 4 (x16 configuration) |
| Burst Length | — | 8 |
| Die Revision | — | W (WM suffix) |
| Operating Frequency | — | 1600 MHz (DDR, 3200 Mbps) |