K4B4G1646F-BYK0 vs H5TC4G63AFR-PBA Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646F-BYK0 disebabkan oleh Samsung Electronics dan H5TC4G63AFR-PBA disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646F-BYK0 | H5TC4G63AFR-PBA |
|---|---|---|
| Merek | Samsung Electronics | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $3.98 |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4 Gb | — |
| Memory Organization | 256M x 16 | — |
| Tegangan Pemberi Arus | 1.35V / 1.5V | — |
| Kadar Data | 1866 Mbps | 1866 Mbps (PC3L-14900) |
| Clock Frequency | 933 MHz | — |
| Kemasan | 96-ball FBGA | 96-ball FBGA |
| Suhu Operasi | 0°C to 95°C (TC) | — |
| Antaramuka | Parallel | 16-bit I/O |
| Burst Length | 8 and 4 | 8 and 4 (with burst chop) |
| Latensi CAS | Programmable | — |
| On-Die Termination | Yes | — |
| ZQ Calibration | Yes | Yes |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| RoHS | Compliant | Compliant |
| Density | — | 4Gb |
| Organisasi | — | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | 11, 12, 13 |
| Gambaran Suhu Operasi | — | 0°C to +95°C (Tcase) |
| On-Die Termination (ODT) | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |