K4B4G1646F-BYK0 vs H5TC4G63AFR-PBA Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646F-BYK0 sa pamamagitan ng Samsung Electronics at H5TC4G63AFR-PBA sa pamamagitan ng SK hynix. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Pagsanggunian na paghahambing
| Parametro | K4B4G1646F-BYK0 | H5TC4G63AFR-PBA |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $3.98 |
| Uri ng Memory | DDR3L SDRAM | DDR3L SDRAM |
| Laki ng Memory | 4 Gb | — |
| Memory Organization | 256M x 16 | — |
| Volte ng Pagbibigay | 1.35V / 1.5V | — |
| Rate ng Data | 1866 Mbps | 1866 Mbps (PC3L-14900) |
| Clock Frequency | 933 MHz | — |
| Packhaging | 96-ball FBGA | 96-ball FBGA |
| Temperature na Operasyon | 0°C to 95°C (TC) | — |
| Interface | Parallel | 16-bit I/O |
| Burst Length | 8 and 4 | 8 and 4 (with burst chop) |
| Latensya ng CAS | Programmable | — |
| On-Die Termination | Yes | — |
| ZQ Calibration | Yes | Yes |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| RoHS | Compliant | Compliant |
| Density | — | 4Gb |
| Organisasyon | — | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | — | 1.35V |
| Ball Pitch | — | 0.8mm |
| Number of Banks | — | 8 |
| CAS Latency (CL) | — | 11, 12, 13 |
| Hanay ng Temperature na Operasyon | — | 0°C to +95°C (Tcase) |
| On-Die Termination (ODT) | — | Yes |
| Write Leveling | — | Yes |
| Auto Self-Refresh | — | Yes |
| Partial Array Self-Refresh | — | Yes |