K4B4G1646F-BYMA vs MT41K256M16HA-125 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646F-BYMA disebabkan oleh Samsung Electronics dan MT41K256M16HA-125 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646F-BYMA | MT41K256M16HA-125 |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $6.36 |
| Jenis Ingatan | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | — |
| Supply Voltage (VDD/VDDQ) | 1.35V (1.28V~1.45V) & 1.5V (1.425V~1.575V) | — |
| Kadar Data | 1866 Mbps (PC3-14900) | — |
| Kemasan | 96-FBGA (Lead-Free & Halogen-Free) | 96-FBGA (9x14 mm) |
| Suhu Operasi | -40°C to +95°C | [DATA_NEEDED: operating temperature range] |
| Latensi CAS | CL=13 (at 1.35V) | 11 |
| Burst Length | 8, 4 (with burst chop) | — |
| Antaramuka | 16-bit I/O | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | — |
| Boson Bebas | Yes | — |
| Saiz Ingatan | — | 4Gbit (256M x 16) |
| Lebar Bus Data | — | 16 bit |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 13.75 ns |
| Tegangan Pemberi Arus | — | 1.35 V |
| Bilangan Pin | — | 96 |
| Jenis Pemasangan | — | Surface Mount |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Logic Family | — | CMOS |
| Refresh Interval | — | 7.8 us at 85C |