K4B4G1646F-BYMA vs MT41K256M16HA-125 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4B4G1646F-BYMA sa pamamagitan ng Samsung Electronics at MT41K256M16HA-125 sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron
MT41K256M16HA-125 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4B4G1646F-BYMA | MT41K256M16HA-125 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Presyo ng Yunit (USD) | — | $6.36 |
| Uri ng Memory | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gb | — |
| Organisasyon | 256M x 16 | — |
| Supply Voltage (VDD/VDDQ) | 1.35V (1.28V~1.45V) & 1.5V (1.425V~1.575V) | — |
| Rate ng Data | 1866 Mbps (PC3-14900) | — |
| Packhaging | 96-FBGA (Lead-Free & Halogen-Free) | 96-FBGA (9x14 mm) |
| Temperature na Operasyon | -40°C to +95°C | [DATA_NEEDED: operating temperature range] |
| Latensya ng CAS | CL=13 (at 1.35V) | 11 |
| Burst Length | 8, 4 (with burst chop) | — |
| Interface | 16-bit I/O | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| Data Mask | Yes | — |
| RoHS | Compliant | — |
| Wala sa Halogen | Yes | — |
| Laki ng Memory | — | 4Gbit (256M x 16) |
| Width ng Data Bus | — | 16 bit |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 13.75 ns |
| Volte ng Pagbibigay | — | 1.35 V |
| Bilang ng Pins | — | 96 |
| Uri ng Pagpapasok | — | Surface Mount |
| Tindminan RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Logic Family | — | CMOS |
| Refresh Interval | — | 7.8 us at 85C |