K6X0808C1D-BF55 vs K6X1008C2D-TF55 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K6X0808C1D-BF55 disebabkan oleh Samsung Electronics dan K6X1008C2D-TF55 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ AktifSamsung Electronics
K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung
K6X1008C2D-TF55 ✗ Akhir HayatPengandingan Spesifikasi
| Parametr | K6X0808C1D-BF55 | K6X1008C2D-TF55 |
|---|---|---|
| Merek | Samsung Electronics | Samsung Electronics |
| Kategori | DRAM | Memory ICs |
| Status Lingkungan Hidup | Aktif | Akhir Hidup |
| Jenis Ingatan | Asynchronous SRAM | SRAM - Asynchronous |
| Saiz Ingatan | 256 Kbit | 1 Mbit |
| Organisasi | 32K x 8 | 128K x 8 |
| Access Time | 55 ns | — |
| Antaramuka | Parallel | Parallel |
| Tegangan Pemberi Arus | 5 V | — |
| Technology | CMOS | Low Power Full CMOS |
| Kemasan | 28-SOP | 32-TSOP REVERSE |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Suhu Operasi | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Operating Current | [DATA_NEEDED: operating current] | 35 mA |
| Control Signals | CE, OE, WE | — |
| Memory Format | SRAM | Volatile (SRAM) |
| Clock Frequency | N/A (asynchronous) | N/A (asynchronous) |
| Refresh | Not required (static memory) | — |
| Status RoHS | unknown | RoHS: Yes (per distributor listing) |
| Access Time (tAA) | — | 55 ns |
| Supply Voltage (Vcc) | — | 4.5 V to 5.5 V |
| Speed Options | — | 55 ns, 70 ns |