K6X0808C1D-BF55 vs K6X1008C2D-TF55 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K6X0808C1D-BF55 sa pamamagitan ng Samsung Electronics at K6X1008C2D-TF55 sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K6X0808C1D-BF55 - 256Kbit 5V Asynchronous SRAM 55ns | Samsung
K6X0808C1D-BF55 ✓ NakahandaSamsung Electronics
K6X1008C2D-TF55 - 1Mbit 128Kx8 SRAM 55ns 5V | Samsung
K6X1008C2D-TF55 ✗ Tapus ng BuhayPagsanggunian na paghahambing
| Parametro | K6X0808C1D-BF55 | K6X1008C2D-TF55 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | DRAM | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Tapus ng Buhay |
| Uri ng Memory | Asynchronous SRAM | SRAM - Asynchronous |
| Laki ng Memory | 256 Kbit | 1 Mbit |
| Organisasyon | 32K x 8 | 128K x 8 |
| Access Time | 55 ns | — |
| Interface | Parallel | Parallel |
| Volte ng Pagbibigay | 5 V | — |
| Technology | CMOS | Low Power Full CMOS |
| Packhaging | 28-SOP | 32-TSOP REVERSE |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| Standby Current | [DATA_NEEDED: standby current] | [DATA_NEEDED: standby current] |
| Operating Current | [DATA_NEEDED: operating current] | 35 mA |
| Control Signals | CE, OE, WE | — |
| Memory Format | SRAM | Volatile (SRAM) |
| Clock Frequency | N/A (asynchronous) | N/A (asynchronous) |
| Refresh | Not required (static memory) | — |
| Tindminan RoHS | unknown | RoHS: Yes (per distributor listing) |
| Access Time (tAA) | — | 55 ns |
| Supply Voltage (Vcc) | — | 4.5 V to 5.5 V |
| Speed Options | — | 55 ns, 70 ns |