M29W400FT55N3E vs M29W320DB70N3E Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W400FT55N3E disebabkan oleh Micron Technology dan M29W320DB70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Micron Technology
M29W400FT55N3E M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E ✓ Aktif
Micron Technology
M29W320DB70N3E M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E ✓ Aktif

Pengandingan Spesifikasi

Parametr M29W400FT55N3E M29W320DB70N3E
Merek Micron Technology Micron Technology
Kategori Memory ICs Flash
Status Lingkungan Hidup Aktif Aktif
Jenis Ingatan Flash - NOR Memory IC NOR Flash
Saiz Ingatan 4 Mbit —
Antaramuka Parallel Parallel
Access Time 55 ns 70 ns
Supply Voltage (VCC) 2.7 V to 3.6 V (program, erase and read) 2.7 V to 3.6 V
Sector Size 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block) —
Boot Block Position Top (FT suffix) —
Suhu Operasi -40C to +125C -40C to +125C
Temperature Grade Automotive —
Kemasan 48-TSOP I 48-TSOP I
Number of Terminals 48 —
Package Code / Shape TSSOP / Rectangular —
Jenis Pemasangan Surface Mount Surface Mount
Tingkat sensitiviti Air Nama (MSL) 3 (168 Hours) —
Packaging Tray —
Peak Reflow Time 30 s max —
Companion Access-Time Grade 55 ns and 70 ns versions available in family —
Density — 32 Mbit (33554 kbits)
Organisasi — 2M x 16
Number of Words — 2000 k
Bits per Word — 16 bits
VPP Fast Program Voltage — 12 V (optional)
Block Architecture — Non-uniform parameter blocks, boot block (bottom boot, DB type)
Status RoHS — ROHS3 Compliant
Programming Mode — Single VCC program/erase; automatic program/erase with status polling
Power-Up Mode — Read mode (default)

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