M29W400FT55N3E vs M29W320DB70N3E 比較

詳細並排比較 M29W400FT55N3E 由 Micron Technology 與 M29W320DB70N3E 由 Micron Technology. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Micron Technology
M29W400FT55N3E M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E - 4Mbit NOR Flash 55ns 48-TSOP | Micron

M29W400FT55N3E ✓ 啟用中
Micron Technology
M29W320DB70N3E M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E - 32Mbit 70ns NOR Flash 48-TSOP | Micron

M29W320DB70N3E ✓ 啟用中

規格比較

參數 M29W400FT55N3E M29W320DB70N3E
品牌 Micron Technology Micron Technology
類別 Memory ICs Flash
生命週期狀態 啟用中 啟用中
記憶體類型 Flash - NOR Memory IC NOR Flash
記憶體容量 4 Mbit —
介面 Parallel Parallel
Access Time 55 ns 70 ns
Supply Voltage (VCC) 2.7 V to 3.6 V (program, erase and read) 2.7 V to 3.6 V
Sector Size 16 KB, 8 KB, 32 KB, 64 KB (asymmetric boot-block) —
Boot Block Position Top (FT suffix) —
工作溫度 -40C to +125C -40C to +125C
Temperature Grade Automotive —
封裝 48-TSOP I 48-TSOP I
Number of Terminals 48 —
Package Code / Shape TSSOP / Rectangular —
安裝類型 Surface Mount Surface Mount
濕度敏感等級 (MSL) 3 (168 Hours) —
Packaging Tray —
Peak Reflow Time 30 s max —
Companion Access-Time Grade 55 ns and 70 ns versions available in family —
Density — 32 Mbit (33554 kbits)
組織 — 2M x 16
Number of Words — 2000 k
Bits per Word — 16 bits
VPP Fast Program Voltage — 12 V (optional)
Block Architecture — Non-uniform parameter blocks, boot block (bottom boot, DB type)
RoHS 狀態 — ROHS3 Compliant
Programming Mode — Single VCC program/erase; automatic program/erase with status polling
Power-Up Mode — Read mode (default)

資料表與資源

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