M29W800FT70N3E vs M29W800FB70N3E Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci M29W800FT70N3E disebabkan oleh Micron Technology dan M29W800FB70N3E disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | M29W800FT70N3E | M29W800FB70N3E |
|---|---|---|
| Merek | Micron Technology | Micron Technology |
| Kategori | Flash | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | NOR Flash (Parallel) | NOR Flash |
| Density | 8 Mbit | 8 Mbit (8388608 bits) |
| Organisasi | 1M x 8 / 512K x 16 | 512K x 16 / 1M x 8 |
| Access Time | 70 ns | 70 ns |
| Supply Voltage (VCC) | 2.7 V to 3.6 V | up to 3.6 V for program, erase and read |
| Programming / Erase Supply | Single supply at VCC (2.7 V to 3.6 V) | — |
| Boot Block Location | Top boot block (FT variant) | — |
| Bus Width | 8-bit or 16-bit (BYTE pin selectable) | — |
| Antaramuka | Parallel, address/data bus | Parallel |
| Suhu Operasi | -40C to +125C | -40C to +125C |
| Kemasan | 48-TSOP I (12 x 20 mm, 0.5 mm pitch) | 48-TSOP (12 x 20 mm), TSOP I |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Standby Current | [DATA_NEEDED: standby current] | — |
| Program/Erase Endurance | [DATA_NEEDED: program/erase cycles] | — |
| Data Retention | [DATA_NEEDED: data retention] | — |
| Block Organization | [DATA_NEEDED: block size/organization] | — |
| Status RoHS | [DATA_NEEDED: RoHS status] | RoHS compliant (plastic TSOP-48) |
| Lebar Bus Data | — | x8/x16 (BYTE# selectable) |
| Programming Time | — | 10 us per byte/word (typical) |
| Memory Blocks | — | 19 blocks, 1 boot block (bottom - FB configuration) |
| Kiraan Pin | — | 48 |
| Product Longevity Program | — | No |
| FBGA Code | — | N/A |
| Chipset Validation | — | N/A |