MT41K256M16RE-125:D vs H5TC4G63AFR-PBI Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT41K256M16RE-125:D disebabkan oleh Micron Technology dan H5TC4G63AFR-PBI disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT41K256M16RE-125:D - 4Gb DDR3L SDRAM 256Mx16 | Micron
MT41K256M16RE-125:D ✓ AktifPengandingan Spesifikasi
| Parametr | MT41K256M16RE-125:D | H5TC4G63AFR-PBI |
|---|---|---|
| Merek | Micron Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Obsolete |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | 256M x 16 |
| Tegangan Pemberi Arus | 1.35 V | 1.35 V |
| Kadar Data | 1600 MT/s | DDR3-1600 (PC3L-12800) |
| Latensi CAS | 11 | Programmable |
| Kemasan | FBGA-96 (9x14 mm) | 96-ball FBGA (TFBGA, BGA96, 9x16, 32) |
| Suhu Operasi | 0C to +95C (TC) | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Burst Length | 8, 4 | 8 (BL8) |
| On-Die Termination | Yes | — |
| Auto-Refresh | Yes | — |
| Self-Refresh | Yes | — |
| Ball Pitch | 0.8 mm | — |
| Total Memory Size | — | 4 Gb |
| Number of Banks | — | 8 |
| On-Die Termination (ODT) | — | Yes |
| Refresh Period | — | 7.8 us at 85°C |
| Gambaran Suhu Operasi | — | -40°C to +95°C |
| Jenis Pemasangan | — | Surface Mount |
| Number of Terminals | — | 96 |
| Status RoHS | — | Compliant |