NT6AN8T0SA vs H5AN8G6NDJR-XNC Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT6AN8T0SA disebabkan oleh Nanya Technology dan H5AN8G6NDJR-XNC disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | NT6AN8T0SA | H5AN8G6NDJR-XNC |
|---|---|---|
| Merek | Nanya Technology | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $55.68 |
| Jenis Ingatan | LPDDR2 SDRAM | DDR4 SDRAM |
| Density | 2Gb | — |
| Organisasi | 64M x 32 | — |
| Tegangan Pemberi Arus | 1.2V | — |
| I/O Voltage | 1.2V | — |
| Kadar Data | 1066 Mbps (533 MHz) | 3200 Mbps |
| Gambaran Suhu Operasi | -30°C to +85°C | — |
| Kemasan | FBGA | FBGA-96 (13x7.5 mm) |
| Jenis Pemasangan | Surface Mount | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Refresh Period | 64ms at 85°C | — |
| Burst Length | 4 or 8 | — |
| On-Die Termination | Yes | — |
| DLL | Yes | — |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 512M x16 |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| Boson Bebas | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |