NT6AN8T0SA vs H5AN8G6NDJR-XNC 比較
詳細並排比較 NT6AN8T0SA 由 Nanya Technology 與 H5AN8G6NDJR-XNC 由 SK hynix. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | NT6AN8T0SA | H5AN8G6NDJR-XNC |
|---|---|---|
| 品牌 | Nanya Technology | SK hynix |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 單價 (USD) | — | $55.68 |
| 記憶體類型 | LPDDR2 SDRAM | DDR4 SDRAM |
| Density | 2Gb | — |
| 組織 | 64M x 32 | — |
| 供應電壓 | 1.2V | — |
| I/O Voltage | 1.2V | — |
| 資料速率 | 1066 Mbps (533 MHz) | 3200 Mbps |
| 工作溫度範圍 | -30°C to +85°C | — |
| 封裝 | FBGA | FBGA-96 (13x7.5 mm) |
| 安裝類型 | Surface Mount | — |
| RoHS 狀態 | Compliant | — |
| Lead-Free | Yes | Yes |
| Refresh Period | 64ms at 85°C | — |
| Burst Length | 4 or 8 | — |
| On-Die Termination | Yes | — |
| DLL | Yes | — |
| 記憶體容量 | — | 8 Gb |
| Memory Organization | — | 512M x16 |
| Supply Voltage (VDD) | — | 1.2 V (max 1.26 V) |
| Number of Terminals | — | 96 |
| Maximum Operating Temperature | — | 85 °C |
| Input/Output Type | — | COMMON |
| RoHS | — | Compliant |
| 無鹵素 | — | Yes |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |