Samsung 176L (V7) 3D NAND Flash Technology Node | Samsung
MPN: 176L ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0 | $0.00 |
| 10 | $0 | $0.00 |
| 100 | $0 | $0.00 |
| 500 | $0 | $0.00 |
| 1,000 | $0 | $0.00 |
Drop-in alternatives for 176L — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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View Datasheet →176L Maximum Ratings & Electrical Characteristics
| Technology Node | 176-layer 3D NAND (V7) |
| Manufacturer | Samsung Electronics |
| Memory Type | 3D V-NAND Flash (NVM) |
| Cell Type (TLC variant) | 3 bits/cell |
| Cell Type (QLC variant) | 4 bits/cell |
| Predecessor Node | V6 (128-layer) |
| Successor Node | V8 (236-layer) |
176L [data_needed: fbga ball count] Pin Configuration Guide
Complete pinout information for 176L ([data_needed: fbga ball count] package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.
![[data_needed: fbga ball count] package pinout diagram for 176L](/assets/package-diagrams/default.svg?v=1788069619)
No detailed pinout data available for 176L.
Refer to the datasheet for full pin configuration.
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
176L is suitable for 6 applications: Consumer SSD Storage, Mobile Embedded Storage (eMMC/UFS), Industrial and IoT Storage, Enterprise and Data Center SSD, Automotive Infotainment Storage, Set-Top Box and Smart Home Hubs.
Consumer SSD Storage
Samsung 176L (V7) NAND is a mainstay of consumer SSDs because its 176-layer stack delivers high bits-per-die density at a competitive cost per gigabyte. In TLC form, V7 dies provide the endurance and sustained-write profile that consumer NVMe and SATA SSD workloads require, while QLC variants target entry-level, read-heavy drives where capacity per dollar is the deciding factor. In a typical SSD design, sixteen V7 packages sit on a single PCB managed by an NVMe controller that performs LDPC error correction, wear leveling, and SLC caching. Because V7 uses the toggle DDR interface, controller firmware must be configured for the die's exact timing parameters; unlike earlier planar generations, 3D NAND page sizes and block structures differ per node, so firmware validation against the specific MPN datasheet is mandatory before mass production.
Recommended
Mobile Embedded Storage (eMMC/UFS)
Smartphones and tablets rely on 176L V7 dies inside Samsung eMMC and UFS packages, where the node's density advantage translates directly into more gigabytes in the same footprint. V7 TLC provides the balance of endurance, power efficiency, and speed needed for app storage, photo capture buffering, and OS boot partitions. Because the mobile channel operates on narrow thermal and power budgets, V7's reduced per-bit program energy versus V6 helps extend battery life during sustained write operations such as 4K video recording. Designers should select the CCK0 commercial temperature grade for consumer handsets, matching the die to the UFS controller's supported toggle DDR generation, and validate power-loss protection behavior, since mobile devices can interrupt writes unpredictably at any moment during daily use.
Recommended
Industrial and IoT Storage
Industrial systems - gateways, edge AI recorders, factory dataloggers - use 176L NAND in BCK0 industrial-temperature grades rated for extended thermal environments. The V7 node's maturity means well-characterized endurance behavior, simplifying lifetime modeling under the constrained write cycles typical of event-driven logging. For these deployments, designers pair V7 dies with controllers exposing pSLC mode, which trades capacity for dramatically higher endurance by storing one bit per physical TLC cell - useful for write-intensive logging partitions. Firmware must enable robust LDPC ECC and power-fail recovery because industrial power is subject to brownouts. Compared with commercial CCK0 parts, the BCK0 grade (for example K9HUGY8J5B-BCK0) carries verified temperature characterization, removing derating guesswork across -40C to +85C ambient conditions.
Recommended
Enterprise and Data Center SSD
Data center drives built on 176L TLC balance cost per terabyte against the endurance and quality-of-service guarantees enterprise workloads demand. Although V8 and newer nodes are capturing flagship enterprise designs, V7 remains deployed in value-tier and capacity-optimized enterprise SSDs, where its proven reliability record and controller ecosystem maturity reduce qualification risk. Enterprise firmware uses aggressive overprovisioning, end-to-end data path protection, and power-loss immunity circuits, all tuned to V7 die characteristics such as program suspend/resume behavior and read-retry tables. Compared to QLC-based enterprise read-cache drives, TLC 176L parts sustain higher mixed random write IOPS, making them the correct choice for databases and virtualization, while QLC V7 fits warm-object storage tiers and CDN origin nodes.
Recommended
Automotive Infotainment Storage
Automotive head units, digital cockpits, and telematics gateways consume 176L NAND inside eMMC/UFS or raw-managed-NAND form factors. The V7 node's density allows map databases, media assets, and OTA update banks to fit a compact, cost-controlled footprint. Automotive programs require AEC-grade qualified managed NAND or UFS - raw dies alone do not meet the qualification envelope - so V7 dies typically appear inside Samsung's automotive managed-NAND packages that add ECC, wear leveling, and temperature-hardened controllers around the die. Temperature cycling, vibration, and extended lifetime requirements mean designers select industrial/automotive-graded V7 silicon and derendurance by a safety factor; the node's mature production history and long-availability commitments make it lower-risk than bleeding-edge V8 for multi-year automotive platform lifecycles.
Recommended
Set-Top Box and Smart Home Hubs
Set-top boxes, smart speakers, and home hubs use 176L NAND for firmware, content caching, and DVR buffering, where moderate capacity and very low bill-of-material cost determine competitiveness. V7 QLC variants suit primarily-read firmware-and-content partitions, while a small pSLC or TLC region handles recording and journal writes - a hybrid partitioning strategy enabled by the V7 die's block structure. Power budgets in these always-on consumer devices favor V7's low standby currents, and the wide availability of V7 MPNs across multiple package options simplifies dual-sourcing within the Samsung family. Firmware teams should validate read-disturb management and data-retention refresh intervals, since set-top-class products typically guarantee multi-year retention across infrequently powered partitions in ambient home environments.
Recommended
Recommended Products Summary
Engineering reference data for 176L — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | K9HUGY8J5B-CCK0 | K9FGGY8J5A-BCK0 | K9JUGY8J5C-CCK0 |
|---|---|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics | Samsung Electronics | Samsung Electronics |
| Package | FBGA BGA (V7 family) | FBGA BGA | FBGA BGA | FBGA BGA |
| Technology Node | 176-layer (V7) | 176-layer (V7) | 176-layer (V7) | [DATA_NEEDED: node] |
| Bits per Cell | 3 (TLC) / 4 (QLC) by variant | 3 (TLC) | 3 (TLC) | [DATA_NEEDED] |
| Density | [DATA_NEEDED: per MPN] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Temperature Grade | CCK0 (commercial) / BCK0 (industrial) | Commercial (CCK0) | Industrial (BCK0) | Commercial (CCK0) |
| Interface | Toggle DDR [DATA_NEEDED: generation] | Toggle DDR | Toggle DDR | Toggle DDR |
| Lifecycle Status | Active (V7 in production, V8 ramping) | Active | Active | Active |
Key Differentiators
- Higher layer count than V6 (vs Samsung V6 (128L))
- QLC option for cost-down designs (vs Samsung 176L TLC)
- Lower risk than bleeding-edge V8 (vs Samsung 236L (V8))
Design Notes
176L is a process node, not an orderable MPN. Never design against the node name: always lock a concrete MPN (density, package ballout, temperature suffix CCK0/BCK0) and design firmware to that die's page size, block count, and timing tables. Substituting a different-density V7 die late in the project will break FTL metadata assumptions and partition layouts.
V7 NAND uses toggle DDR interfaces where signal integrity on CE#, RE#, DQS, and DQ buses determines achievable throughput. Match fly-by topology lengths, keep DQS/DQ pairs length-matched within the controller vendor's spec, and follow the Samsung hardware design guide for the specific package ballout. Verify read-retry and NV-DDR2 timing modes against the exact MPN before freezing the layout.
Plan dual-rail sequencing for VCC and VCCQ per the MPN datasheet, and budget worst-case program current across parallel channels - 3D NAND program pulses are higher-current than planar generations. For power-loss immunity, size hold-up capacitance to complete in-flight program/erase operations or guarantee safe abort, and validate retention after brownout events on real hardware.
Compliance Information
Compliance data must be confirmed per specific orderable MPN from Samsung product pages; the provided web data does not include compliance statements for 176L dies.
