1EDI20I12MFXUMA1 - 1200V Isolated Gate Driver | Infineon
MPN: 1EDI20I12MFXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.05 | $30.50 |
| 100 | $2.61 | $261.00 |
| 500 | $2.18 | $1,090.00 |
| 1,000 | $1.84 | $1,840.00 |
1EDI20I12MFXUMA1 Overview
A gate driver IC is a specialized power-management device that sits between a low-voltage control logic output (typically from a microcontroller or DSP) and the high-voltage gate of a power transistor such as an IGBT, SiC MOSFET, or GaN HEMT. Its core function is to provide level shifting, isolation (galvanic for safety in high-voltage bridges), and high-peak current capability to charge and discharge the gate capacitance quickly, which minimizes switching losses. The 1EDI20I12MFXUMA1 belongs to Infineon's EiceDRIVER 1ED family of compact single-channel isolated gate drivers, optimized for high-voltage discrete power stages.
Key features include 1200 V functional isolation across the coreless transformer barrier, 2 A peak source/sink gate drive current, integrated 2 A active Miller clamp, short-circuit clamping (DESAT-like), 300 ns typical propagation delay, 4 mm minimum creepage for reinforced isolation in pollution degree 2 environments, and an operating supply range suitable for +15 V gate drive rails. The driver supports both inverting and non-inverting input logic.
Architecturally, the part uses Infineon's coreless-transformer (CT) isolation technology to transmit gate-drive signals across the galvanic barrier without optocouplers, eliminating optocoupler aging effects and providing CMTI in the tens of kV/us range. Internal undervoltage lockout (UVLO) on the secondary side protects IGBTs from insufficient gate drive voltage.
Typical applications include solar string inverters, industrial motor drives (VFD/servo), EV charging stations, induction heating, and uninterruptible power supplies (UPS) where isolated, high-side IGBT/SiC gate drive is required. The part's compact PG-DSO-8-51 footprint reduces PCB area compared to traditional gate-drive optocoupler + discrete buffer solutions.
When designing with this driver, place the bootstrap or isolated supply decoupling capacitor as close as possible to the VCC2 pin, and keep the gate-drive loop (driver output → gate → emitter/source → driver GND2) as small as possible to minimize parasitic inductance. The Miller-clamp pin should be connected directly to the IGBT collector-side gate-pad to be effective against dv/dt-induced turn-on.
This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that complement (and in some areas go beyond) the manufacturer datasheet, supporting engineer decisions during component selection and BOM risk mitigation.
Drop-in alternatives for 1EDI20I12MFXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with 1EDI20I12MFXUMA1 (same form factor and footprint) — differing in Package, Operating Temperature, RoHS Status, Configuration, Function.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
1EDI20I12MF
✅ Drop-In📋 Reference alternative (not in catalog)
1ED020I12B2XUMA1
✅ Drop-In✓ In Stock
$2.65 / Unit
View Datasheet →1ED3124MC12HXUMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.45 / Unit
View Datasheet →2ED21064S06JXUMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.85 / Unit
View Datasheet →1EDI20I12MFXUMA1 Maximum Ratings & Electrical Characteristics
| Function | Isolated single-channel high-side gate driver |
| Isolation Type | Galvanic (coreless transformer) |
| Number of Channels | 1 |
| Output Current (Source/Sink) | 2 A peak |
| Active Miller Clamp Current | 2 A |
| Maximum Operating Voltage (Switch side) | 1200 V |
| Propagation Delay (typ.) | 300 ns |
| Input Logic | Inverting / Non-inverting |
| Output Configuration | Single high-side driver |
| Minimum Creepage | 4 mm |
| Short Circuit Protection | Yes (clamping) |
| Package | PG-DSO-8-51 (8-pin DSO, 4 mm creepage) |
| Mounting Type | Surface Mount |
| UVLO | Yes (secondary side) |
| RoHS Status | Compliant |
1EDI20I12MFXUMA1 Pin Configuration
| Pin 1 | VCC1 — Primary-side supply voltage |
| Pin 2 | IN+ — Non-inverting logic input |
| Pin 3 | IN- — Inverting logic input |
| Pin 4 | GND1 — Primary-side ground |
| Pin 5 | VCC2 — Secondary-side (gate-drive) supply voltage |
| Pin 6 | OUT — Gate driver output to power-switch gate |
| Pin 7 | CLAMP — Active Miller clamp output |
| Pin 8 | GND2 — Secondary-side ground (power-switch emitter/source return) |
Typical Applications
1EDI20I12MFXUMA1 is suitable for 6 applications: Solar String Inverters, Industrial Motor Drives (VFD / Servo), EV Charging Stations, Uninterruptible Power Supplies (UPS), Induction Heating Equipment, Photovoltaic Boost and HERIC Topologies.
Solar String Inverters
The 1EDI20I12MFXUMA1 drives the high-side IGBT or SiC MOSFET in solar string inverter boost and H-bridge stages at 600 V to 1200 V DC bus. Its 1200 V functional isolation supports the reinforced-insulation requirements of IEC 62109, while the 2 A peak output current switches 50 A to 600 A class power modules without an external buffer. The integrated active Miller clamp prevents parasitic turn-on during fast commutation events when modules share a tight DC-link layout. Using a galvanically isolated driver also eliminates optocoupler aging concerns that shorten inverter lifetime in field installations exposed to temperature cycling.
Recommended
Industrial Motor Drives (VFD / Servo)
In AC variable-frequency drives and servo amplifiers, the 1EDI20I12MFXUMA1 provides isolated high-side gate drive for the inverter bridge. Its 300 ns propagation delay supports switching frequencies up to ~50 kHz when paired with modern IGBTs and SiC MOSFETs, while the PG-DSO-8-51 footprint with 4 mm creepage meets IEC 61800-5-1 reinforced-insulation requirements for industrial machinery. The integrated Miller clamp and short-circuit clamping reduce DESAT-detection complexity, allowing engineers to implement reliable overcurrent protection without external comparators. This driver also survives the harsh thermal and vibration profiles typical of motor-drive cabinets.
Recommended
EV Charging Stations
EV charging modules - both DC fast chargers (Level 3) and onboard chargers - require compact, reliable isolated gate drivers for PFC and DC-DC stages. The 1EDI20I12MFXUMA1's 1200 V rating suits 800 V battery architectures, and its 2 A drive strength handles SiC MOSFETs up to the 100 mΩ class used in 22 kW to 50 kW charging modules. Coreless-transformer isolation eliminates optocoupler lifetime concerns critical for automotive-grade reliability targets. The wide-body PG-DSO-8-51 package also enables top-side cooling layouts common in liquid-cooled charging designs.
Recommended
Uninterruptible Power Supplies (UPS)
Double-conversion online UPS systems route power through an IGBT-based rectifier and inverter, both of which benefit from isolated high-side gate drivers like the 1EDI20I12MFXUMA1. The 1200 V functional isolation supports 480 V three-phase input rectification, while the 2 A peak current drives 600 A class modules at moderate switching frequencies. Integrated short-circuit clamping provides fast fault response that prevents catastrophic failure during output short-circuit events - a key requirement for UPS reliability where load faults must not propagate to the source. The driver's compact footprint also enables high-density 10 kW to 50 kW rack-mount designs.
Recommended
Induction Heating Equipment
Induction heating cooktops and industrial RF heating inverters use resonant half-bridge or full-bridge topologies that demand fast, isolated gate drive. The 1EDI20I12MFXUMA1's 300 ns propagation delay and 2 A peak output current suit resonant tank frequencies from 20 kHz to 100 kHz, while the 1200 V rating handles rectified mains up to 530 V RMS three-phase. The active Miller clamp is particularly valuable in these topologies where dv/dt on the bridge nodes can reach 10 kV/us during resonant transitions. The compact PG-DSO-8-51 package also enables small-form-factor designs needed for slim induction cooktop housings.
Recommended
Photovoltaic Boost and HERIC Topologies
HERIC (Highly Efficient and Reliable Inverter Concept) and H6 bridge topologies used in transformerless PV inverters require floating high-side switches with 100% duty-cycle capability, which the bootstrap-based IR2110 cannot provide. The 1EDI20I12MFXUMA1's galvanic isolation supports continuous high-side conduction, improving European-efficiency-weighted performance metrics. Its 1200 V rating covers 1500 V DC string-inverter buses and its 2 A drive current is well-matched to 600 V to 1200 V SiC MOSFETs. Reinforced-insulation creepage (4 mm) also passes IEC 62109-1 safety tests for residential PV installations.
Recommended
Recommended Products Summary
Engineering reference data for 1EDI20I12MFXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | 1EDI20I12MF | 1ED020I12B2XUMA1 | 1ED3124MC12HXUMA1 |
|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon |
| Package | PG-DSO-8-51 | PG-DSO-8-51 - same | PG-DSO-8 (similar) | PG-DSO-8-51 - same |
| Isolation Voltage | 1200 V | 1200 V | 1200 V | 1200 V |
| Output Current (peak) | 2 A | 2 A | 2 A | 2 A |
| Miller Clamp | Yes (2 A active) | Yes (2 A active) | Yes | Yes |
| Topology | Single high-side | Single high-side | Half-bridge | Single high-side |
Key Differentiators
- Integrated 2 A active Miller clamp (vs 1ED020I12B2XUMA1)
- Single high-side topology in compact PG-DSO-8-51 (vs 1ED020I12B2XUMA1)
- Galvanically isolated by coreless transformer (vs IR2110SPBF)
Design Notes
Place the VCC2 decoupling capacitor (typ. 1 uF ceramic + 100 nF HF bypass) within 2 mm of the VCC2 and GND2 pins to minimize the gate-drive power loop inductance. The gate-drive output loop (pin 6 OUT → gate resistor → gate → emitter → pin 8 GND2) must be kept under 10 nH to suppress ringing that can exceed the IGBT/SiC MOSFET maximum gate voltage. Use a ground plane on the secondary side; do not share the primary-side GND1 and secondary-side GND2 planes.
The PG-DSO-8-51 package dissipates roughly 0.3 W to 0.5 W at 50 kHz switching frequency driving a 50 nC gate charge. With theta_JA around 100 C/W (estimated, per JEDEC EIA/JESD51 4-layer test board), the junction-to-ambient temperature rise is approximately 30 C to 50 C above ambient. For higher switching frequencies or larger gate-charge loads, ensure copper area of at least 100 mm² under the exposed pad area on the secondary side, and verify junction temperature against the datasheet's 150 C maximum.
Do not leave the CLAMP pin floating - even in designs where Miller clamping is not strictly required, leaving it floating can cause internal oscillation and excess quiescent current. Connect CLAMP either directly to the gate (between gate resistor and IGBT gate) or to GND2 if unused. Also verify that VCC2 never exceeds the absolute maximum (typ. 20 V); a TVS diode from VCC2 to GND2 is recommended when the isolated supply rail is unregulated. Finally, do not route the primary-side logic signals (IN+, IN-, VCC1, GND1) directly under the isolation barrier to preserve the 4 mm creepage specification.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial-grade part. Lead-free reflow compatible.
