CMUDM8004-TR-PBFREE - 30V 450mA P-Channel MOSFET | Central Semiconductor
MPN: CMUDM8004-TR-PBFREE ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.12 | $0.12 |
| 10 | $0.11 | $1.10 |
| 100 | $0.1 | $10.00 |
| 500 | $0.09 | $45.00 |
| 1,000 | $0.08 | $80.00 |
CMUDM8004-TR-PBFREE Overview
A P-channel enhancement-mode MOSFET is a voltage-controlled semiconductor switch that conducts when the gate-source voltage is pulled below the source potential by at least the threshold voltage. Within the power management hierarchy, small-signal MOSFETs such as this device sit between discrete bipolar junction transistors and larger power MOSFETs, offering voltage-driven, essentially gate-current-free switching for load-switch and power-path control functions.
Key differentiating features include a low threshold voltage, which allows direct drive from low-voltage logic and microcontroller GPIO outputs without level-shifting circuitry, and the P-channel polarity, which simplifies high-side load switching because the gate can be pulled to ground to turn the device on, with the source tied to the positive supply rail. The 30 V rating comfortably covers 5 V, 12 V, and 24 V rail systems.
Fabricated as an enhancement-mode silicon MOSFET, the device provides normally-off behavior: with zero gate-source bias it blocks current, a fail-safe characteristic preferred over depletion-mode devices in power switching. The small SOT-523 footprint minimizes board area for high-density portable and battery-powered designs, while the PBFREE suffix confirms lead-free, RoHS-aligned construction for global compliance.
Typical applications named in the manufacturer datasheet are load and power switches and power supply converter circuits, where the device serves as a high-side switch, reverse-polarity protection element, or power-path controller in portable electronics, battery-powered equipment, and small DC-DC converter stages.
A key design consideration: because the package dissipates only 250 mW at 25 C ambient, verify that I-squared-R conduction losses plus switching losses remain within this limit across the full temperature range, derating as ambient temperature rises.
This page synthesizes distributor pricing, availability, and datasheet-derived design guidance for the CMUDM8004-TR-PBFREE in one place, adding cross-reference and selection context beyond the raw manufacturer datasheet.
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Request AlternativesCMUDM8004-TR-PBFREE Maximum Ratings & Electrical Characteristics
| Transistor Type | P-Channel Enhancement Mode MOSFET |
| Drain-Source Voltage (Vdss) | 30 V |
| Continuous Drain Current (Id) at Ta | 450 mA |
| Power Dissipation (Pd) at Ta | 250 mW |
| Mounting Type | Surface Mount |
| Package | SOT-523 |
| Configuration | Single FET |
| Gate Drive | Low threshold voltage, logic-compatible |
| Lead Free | Yes (PBFREE) |
| RoHS Status | Compliant |
| Packaging | Tape and Reel (TR) |
| Typical Applications | Load/Power Switches, Power Supply Converter Circuits |
| Technology | Silicon MOSFET |
CMUDM8004-TR-PBFREE sot-523 Pin Configuration Guide
Pin configuration for CMUDM8004-TR-PBFREE (sot-523 package). This power device features gate, drain, and source terminals. For non-polarized packages, refer to the manufacturer datasheet for exact pin 1 orientation and footprint details. Common applications include power supply design, motor driving, and load switching.
No detailed pinout data available for CMUDM8004-TR-PBFREE.
Refer to the datasheet for full pin configuration.
Typical Applications
CMUDM8004-TR-PBFREE is suitable for 6 applications: High-Side Load Switching, Portable and Battery-Powered Electronics, Power Supply Converter Circuits, Reverse-Polarity and Power-Path Protection, Industrial and IoT Sensor Node Power Gating, Test, Measurement, and Instrumentation Switching.
High-Side Load Switching
The CMUDM8004-TR-PBFREE fits high-side load switching because its P-channel polarity lets the source sit on the positive rail and the gate be pulled to ground for turn-on, eliminating the charge-pump or bootstrap gate driver an N-channel high-side switch would need. With a 30 V drain-source rating it can switch 5 V, 12 V, and 24 V rails, and its low threshold voltage permits direct drive from microcontroller GPIO through a simple level interface. In practice the device is placed between the supply rail and the load, with a pull-up from gate to source holding it off during startup and a series gate resistor shaping switching speed. The key limitation is the 450 mA / 250 mW envelope: loads above a few hundred milliamps with meaningful voltage drop will exceed the dissipation budget, so verify I-squared-R losses across ambient temperature before committing.
Recommended
Portable and Battery-Powered Electronics
Battery-powered consumer and portable products benefit from the CMUDM8004-TR-PBFREE's tiny 3-pin SOT-523 footprint, which occupies roughly half the PCB area of a SOT-23 part, freeing space in dense handheld layouts. Its low threshold voltage supports direct logic-level drive from power-management ICs and microcontrollers operating at 1.8 V to 5 V, enabling software-controlled power gating of subsystems to extend battery life. The enhancement-mode normally-off characteristic guarantees the load stays disconnected until the gate is actively driven, a fail-safe property for battery protection circuits. Designers should confirm that the 30 V rating comfortably exceeds the pack voltage - true for single- and multi-cell Li-ion and 12 V lead-acid systems - and that continuous load current stays within 450 mA at the worst-case ambient temperature, derating the 250 mW dissipation limit accordingly in sealed enclosures.
Recommended
Power Supply Converter Circuits
Central Semiconductor's datasheet explicitly names power supply converter circuits as a target application for the CMUDM8004. Within small converter stages - linear post-regulators, auxiliary switching stages, and power-path multiplexing around the converter - the device serves as a switch or pass element where current demands stay at or below 450 mA. Its P-channel structure is convenient in converter input sections, where a high-side switch must block the supply until enabled. At 30 V, the part covers common 12 V and 24 V intermediate bus voltages with margin for transients. Engineers should note that the 250 mW package dissipation limits continuous conduction duty; for converter duty cycles with higher average current, calculate worst-case power as Id-squared times Rds(on) plus switching losses and compare against the derated dissipation curve at the enclosure ambient temperature before selecting this part over a larger-package MOSFET.
Recommended
Reverse-Polarity and Power-Path Protection
A P-channel MOSFET such as the CMUDM8004-TR-PBFREE is a classic reverse-polarity protection element: placed with source to the supply input and drain to the load, the body diode initially conducts, the device then enhances on, and its low forward drop replaces a lossy series diode. With a 30 V rating, it protects 12 V and 24 V input systems, and the 450 mA capability covers low-power control boards, sensors, and accessory circuits. The normally-off enhancement-mode behavior also supports power-path ORing and load-sharing schemes where software must arbitrate between battery and adapter sources. Design guidance: verify the body-diode reverse surge behavior on battery hot-plug events, add a zener clamp if input transients can push gate-source voltage beyond the rated limit, and confirm steady-state dissipation stays within the 250 mW package budget at maximum load current.
Recommended
Industrial and IoT Sensor Node Power Gating
In industrial IoT nodes, sensors are periodically powered down between measurement cycles to save energy, and the CMUDM8004-TR-PBFREE is an economical gating element for this duty. A microcontroller GPIO actively pulls the gate low to energize the sensor rail through the source-to-drain channel, then releases it to a pull-up that holds the switch off, dropping node quiescent consumption to near zero. The SOT-523 package minimizes board area on compact sensor boards, and the 30 V rating tolerates 12 V and 24 V industrial supply rails. Because the switched current of typical sensor front ends stays far below the 450 mA limit, the part operates with large margin, and switching speed requirements are modest in this duty cycle. Select pull-up resistance high enough to limit off-state leakage yet low enough for defined turn-off timing on the chosen cycle rate.
Recommended
Test, Measurement, and Instrumentation Switching
Bench instruments, fixture interfaces, and automated test equipment frequently need small high-side switches to route power to device-under-test sockets, and the CMUDM8004-TR-PBFREE serves this role at low cost with logic-level drive from the instrument's controller. The 30 V rating covers most bench supply voltages, and 450 mA is adequate for powering accessory boards, relays of modest coil current, or indicator loads. The SOT-523 surface-mount package suits dense switching matrices where many channels occupy a single board. Designers should add local gate pulldowns so all channels default to a known off state at power-up, and series gate resistors to control switching edges and reduce coupling into sensitive measurement paths. For channels that must carry more than 450 mA or dissipate beyond 250 mW, parallel a bigger discrete MOSFET instead of relying on this device.
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Recommended Products Summary
Engineering reference data for CMUDM8004-TR-PBFREE — comparison, design guidance, and compliance information.
Selection Guide
Key Differentiators
- Ultra-compact SOT-523 footprint (vs Generic SOT-23 P-channel MOSFETs)
- Low threshold voltage for logic-level drive (vs Standard-threshold P-channel small-signal MOSFETs)
- Lead-free PBFREE construction (vs CMUDM8004-TR (non-PBFREE legacy order code))
Design Notes
The SOT-523 package dissipates only 250 mW at 25 C ambient, and this figure derates as ambient temperature rises. Estimated: at 450 mA load, any conduction drop beyond roughly 0.55 V (P = 450 mA x 0.55 V = 247 mW) puts you at the dissipation ceiling, so compute Id-squared times Rds(on) plus any body-diode conduction time and check against the derating curve in the manufacturer datasheet. In sealed enclosures at 70 C ambient, expect the usable dissipation to fall well below 250 mW; reduce load current or move to a larger package such as SOT-23 if the calculation shows exceedance.
SOT-523 (SC-89) is smaller than SOT-23 (SC-59) - the footprints are NOT interchangeable. Use the land pattern in the Central Semiconductor datasheet mechanical drawing, not a generic SOT-23 pad layout, or the leads will not seat during reflow. Keep gate traces short to limit pickup of switching noise, and place a small series gate resistor (typically tens of ohms) to damp ringing when the switch is driven from a low-impedance controller output. Because the package is small with fine lead pitch, inspect stencil apertures to avoid tombstoning during reflow.
Three frequent mistakes with this class of P-channel switch: first, omitting the gate-source pull-up resistor, leaving the gate floating and the switch in an undefined state at startup - always guarantee a defined off state. Second, exceeding the gate-source voltage rating during supply transients; add a zener clamp between gate and source when input excursions are possible (verify the Vgs limit in the datasheet, which was not included in our retrieved data). Third, substituting a SOT-23 footprint for the SOT-523 device, causing assembly defects. Confirm all three items before releasing the design.
Compliance Information
PBFREE suffix denotes lead-free construction; RoHS compliance stated on distributor listings. REACH, halogen-free, and conflict-minerals statuses were not present in retrieved data - confirm with manufacturer compliance documentation.
