GS0650182LTRXUMA1 - 650V 18A GaN Power Transistor | Infineon
MPN: GS0650182LTRXUMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $12.5 | $12.50 |
| 10 | $11.25 | $112.50 |
| 100 | $9.95 | $995.00 |
| 500 | $8.8 | $4,400.00 |
| 1,000 | $7.85 | $7,850.00 |
GS0650182LTRXUMA1 Overview
A Gallium Nitride (GaN) transistor is a wide-bandgap semiconductor power switch that sits in the hierarchy: GaN FET -> HEMT (High Electron Mobility Transistor) -> power transistor -> discrete semiconductor. Compared with conventional silicon MOSFETs, GaN HEMTs offer dramatically lower gate charge, lower output capacitance, zero reverse recovery charge, and higher switching frequency capability. These traits make GaN transistors the preferred choice for next-generation AC/DC, DC/DC, and totem-pole PFC power stages where efficiency, power density, and thermal performance are paramount.
Key features of the GS0650182LTRXUMA1 include the 650V drain-source blocking voltage, 18A continuous drain current at case temperature, 0.11 ohm on-resistance, and a low 4 nC gate charge enabling high-frequency switching. The normally-off enhancement-mode gate structure provides intrinsic safety and simplifies gate drive design versus cascode or depletion-mode GaN devices. The PDFN-8 (8x8 mm) package provides an exposed thermal pad for low thermal resistance and is footprint-compatible with industry-standard GaN land patterns.
At the architecture level, this GaN HEMT uses a silicon-substrate GaN-on-Si epitaxial process, which integrates the high-electron-mobility AlGaN/GaN heterostructure onto a standard silicon wafer. The 2DEG (two-dimensional electron gas) channel yields electron mobility roughly an order of magnitude higher than silicon, which translates directly into the device's low RDS(on) x Qg figure-of-merit. The result is a switch that can operate efficiently at frequencies well above what silicon MOSFETs achieve.
Typical applications include totem-pole bridgeless PFC converters for server and telecom AC/DC front ends, high-frequency LLC and quasi-resonant DC/DC stages in industrial SMPS, photovoltaic microinverters and string inverters, on-board chargers for electric vehicles, and Class-D audio amplifiers where low dead-time losses matter. Designers choose GaN over SiC or silicon MOSFETs when the priority is highest switching frequency, smallest magnetic components, and best efficiency at partial loads.
When designing with this part, observe the absolute maximum VDS of 650V and ensure adequate margin below that value during transient ringing on the switching node. Use a gate drive voltage of typically 6V with a recommended negative turn-off bias to prevent false triggering from Miller coupling, and keep the high-current loop area minimal on the PCB to limit parasitic inductance. The exposed pad must be soldered to a sufficient copper pour - typically 1 square inch or more - to dissipate the conduction losses at full load.
This page synthesizes distributor pricing, drop-in same-package alternatives, and practical design notes not found in the manufacturer datasheet alone, helping engineers shorten the selection and qualification cycle for 650V GaN power stages.
Drop-in alternatives for GS0650182LTRXUMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
GS0650182L
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
GS-065-018-2-L-TR
β Drop-Inπ Reference alternative (not in catalog)
GS0650162LTR
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
GS0650152LTR
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
GS0650202LTR
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
GS66508T
β Drop-Inπ Reference alternative (not in catalog)
GS0650182LTRXUMA1 Maximum Ratings & Electrical Characteristics
| Technology | GaN HEMT (Gallium Nitride High Electron Mobility Transistor) |
| Transistor Type | N-Channel enhancement-mode |
| Drain-Source Voltage (VDS) | 650 V |
| Continuous Drain Current (ID, Tc) | 18 A |
| On-Resistance (RDS(on)) | 0.11 ohm |
| Total Gate Charge (Qg) | 4 nC |
| Package | 8-PDFN (8x8 mm) |
| Mounting Type | Surface Mount |
| Number of Pins | 8 |
| Operating Mode | Enhancement-mode (normally-off) |
| Channel Type | N-Channel |
| Substrate Technology | GaN-on-Si |
| Reverse Recovery Charge (Qrr) | 0 nC (GaN HEMT) |
| RoHS Status | Compliant |
| Manufacturer | Infineon Technologies (Legacy Gan Systems product line) |
GS0650182LTRXUMA1 Pin Configuration
| Pin 1 | GATE β Gate drive input (6V typical, isolated GaN driver recommended) |
| Pin 2 | DRAIN β High-voltage drain connection |
| Pin 3 | DRAIN β High-voltage drain connection (paralleled for current spreading) |
| Pin 4 | DRAIN β High-voltage drain connection (paralleled for current spreading) |
| Pin 5 | DRAIN β High-voltage drain connection (paralleled for current spreading) |
| Pin 6 | SOURCE β Source connection / power ground return |
| Pin 7 | SOURCE β Source connection / power ground return (paralleled for current spreading) |
| Pin 8 | SOURCE β Source connection / power ground return (paralleled for current spreading) |
Safe Operating Area (estimated from datasheet DC ratings)
Typical Applications
GS0650182LTRXUMA1 is suitable for 6 applications: Totem-Pole Bridgeless PFC, High-Frequency LLC DC/DC Converter, Photovoltaic String Inverter, On-Board EV Charger (OBC), Class-D Audio Amplifier Output Stage, Industrial SMPS Primary Switch.
Totem-Pole Bridgeless PFC
The GS0650182LTRXUMA1 is the high-frequency switch of choice in totem-pole bridgeless PFC stages for server, telecom, and industrial AC/DC front ends. Its 4 nC Qg and zero Qrr enable switching at 100-300 kHz versus the 20-65 kHz typical for 650V silicon MOSFETs, eliminating reverse-recovery losses that dominate bridgeless topologies with Si switches. With 18A continuous current at 650V blocking and 0.11 ohm RDS(on), it delivers 99%+ efficiency at line voltages from 90 to 264 VAC and significantly shrinks magnetics. Designers pair it with a dedicated GaN gate driver (such as Si8271 or UCC21750) and place the high-current loop area under 5 nH to control switching-node ringing.
Recommended
High-Frequency LLC DC/DC Converter
In 400V-to-48V or 400V-to-12V LLC resonant DC/DC stages, the GS0650182LTRXUMA1 enables switching frequencies up to 500 kHz-1 MHz that are unattainable with silicon MOSFETs at this voltage rating. The 4 nC Qg translates to low gate-drive loss per cycle, and zero Qrr eliminates the dead-time body-diode conduction penalty that limits Si-LLC efficiency. The 0.11 ohm RDS(on) keeps conduction losses manageable at 18A continuous current, suitable for 800W-2kW server and telecom brick converters. The PDFN-8 (8x8) package with exposed thermal pad supports PCB top-side cooling and reduces thermals without forcing a heatsink.
Recommended
Photovoltaic String Inverter
The GS0650182LTRXUMA1 fits 600V-class photovoltaic string inverter power stages where high efficiency and small form factor matter. At 650V blocking, it tolerates the worst-case DC-bus voltage of a 1500V PV string (with adequate margin) and operates at 100+ kHz to shrink the output filter and isolation transformer. Its 18A current handles the 6-10 kW microinverter and string-inverter class. Compared to 650V silicon IGBTs, the GaN HEMT eliminates tail-current switching losses and pushes efficiency from 96-97% to 98-99%, directly increasing energy harvest over the inverter lifetime.
Recommended
On-Board EV Charger (OBC)
The GS0650182LTRXUMA1 is well-suited to 6.6 kW-22 kW on-board EV charger power stages where high power density, high efficiency, and bidirectional capability are mandatory. In totem-pole PFC + LLC topologies operating from 400V or 800V EV bus rails, its 650V rating covers 400V systems and its high-frequency switching shrinks magnetic components by 3-4x versus silicon. Zero Qrr is critical for the bidirectional switches in V2X (vehicle-to-everything) operation, where body-diode reverse recovery in Si MOSFETs would otherwise cause severe losses. The 18A current supports 11 kW class power levels with paralleled devices for higher power.
Recommended
Class-D Audio Amplifier Output Stage
The GS0650182LTRXUMA1 fits high-end Class-D audio amplifier output stages where ultra-low dead-time losses preserve audio fidelity. Traditional silicon MOSFET Class-D outputs lose 1-2% efficiency to dead-time body-diode conduction; the zero-Qrr GaN HEMT eliminates this loss and allows switching frequencies of 1-2 MHz that push the output filter into the 10-50 kHz acoustic band, making it easier to filter with small ferrite-core inductors. The 0.11 ohm RDS(on) and 18A capability drive 500W-1kW per-channel power levels with THD+N below 0.005%. The PDFN-8 (8x8) package fits compact amplifier PCBs.
Recommended
Industrial SMPS Primary Switch
In 1-3 kW industrial SMPS primary-side hard-switched or quasi-resonant topologies, the GS0650182LTRXUMA1 replaces 650V silicon MOSFETs to push efficiency from 92-94% into the 96-98% range. The 4 nC Qg reduces gate-drive loss at 200 kHz hard-switching operation, and the 650V rating tolerates the reflected-output plus leakage-inductance spike typical of flyback and forward converters. The 18A continuous current handles 1.5-3 kW power levels, while the PDFN-8 (8x8) exposed pad simplifies thermal management on a single-side-cooled PCB. The wide safety margin between 650V VDS and the typical 400V bus lets designers skip snubber circuits in many cases.
Recommended
Recommended Products Summary
Engineering reference data for GS0650182LTRXUMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | GS0650182L | GS-065-018-2-L-TR | GS0650162LTR | GS0650152LTR | GS0650202LTR | GS66508T |
|---|---|---|---|---|---|---|---|
| Package | PDFN-8 (8x8 mm) | PDFN-8 (8x8 mm) - same | PDFN-8 (8x8 mm) - same | PDFN-8 (8x8 mm) - same | PDFN-8 (8x8 mm) - same | PDFN-8 (8x8 mm) - same | GaNpx (8x8 mm top-cooled) - same footprint, different thermal orientation |
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Drain-Source Voltage (VDS) | 650 V | 650 V | 650 V | 650 V | 650 V | 650 V | 650 V |
| Reverse Recovery Charge (Qrr) | 0 nC | 0 nC | 0 nC | 0 nC | 0 nC | 0 nC | 0 nC |
| Technology | GaN-on-Si HEMT | GaN-on-Si HEMT | GaN-on-Si HEMT | GaN-on-Si HEMT | GaN-on-Si HEMT | GaN-on-Si HEMT | GaN-on-Si HEMT |
Key Differentiators
- Zero reverse-recovery charge for totem-pole PFC and hard-switched bridge topologies (vs 650V silicon MOSFET (e.g., IPW60R037P7XKSA1))
- Low 4 nC Qg enables MHz-class switching frequency (vs 650V SiC MOSFET (typical 30-80 nC Qg))
- PDFN-8 (8x8 mm) compact surface-mount package with exposed thermal pad (vs TO-247 650V silicon MOSFET (typical 15.6x20 mm))
Design Notes
Estimated: The GS0650182LTRXUMA1's GaN HEMT switching transitions in the 5-20 ns range demand a high-current loop area below 5 nH. Place input bypass capacitors within 2-3 mm of the source/drain pads, use 1-2 oz copper with stitched vias, and avoid any PCB cuts in the high-current path. Keep the gate-drive loop (gate-driver output, gate resistor, source-return) tight and orthogonal to the power loop to prevent Miller coupling. A 4-layer board with a dedicated ground plane is strongly recommended over 2-layer designs above 100 kHz switching.
Estimated: At 18A continuous drain current and 0.11 ohm RDS(on), conduction loss is approximately 35.6 W. With a PDFN-8 (8x8 mm) thermal pad on 1 square inch of 2-oz copper, junction-to-ambient thermal resistance is approximately 25-30 C/W (no heatsink) or 10-15 C/W with bottom-side heatsink. To stay below 150C junction at 25C ambient, power dissipation must remain below approximately 4-5 W without a heatsink; for full-load operation at 18A, an active cooling solution or substantial copper pour is mandatory. The Legacy Gan Systems PDFN-8 datasheet is the authoritative source for these thermal numbers.
Do not exceed the absolute maximum drain-source voltage of 650V - leave at least 50-100V margin for switching-node ringing. Use a dedicated GaN gate driver (Si8271, UCC21750, 1ED3124MC12HXUMA1, etc.) rather than a generic MOSFET driver, as GaN HEMTs require tight gate-voltage regulation (6V typical, 7V max). Do not let the gate pin float; pull-down resistors prevent false turn-on from Miller current. Lastly, do not body-diode-conduction-cycle this part for long periods - although Qrr is zero, the GaN reverse conduction drop (about 2-3V) dissipates more than a Si MOSFET body diode.
Keep the gate-drive return (Kelvin source connection) separated from the power-source return; route the gate driver's source-return to the GS0650182LTRXUMA1's source-sense pin rather than to the power ground. Place a ferrite bead or small inductor (1-10 nH) on the gate drive path if ringing is observed. For totem-pole PFC, use a gate-drive isolation transformer or digital isolator with >100 V/ns CMTI rating; standard optocouplers are typically too slow.
Compliance Information
RoHS and REACH compliant per Infineon product page; not AEC-Q100 qualified - check the automotive-grade GaN line for AEC-Q100 variants. Lead-free and halogen-free packaging. Conflict-minerals declaration per Infineon policy.
