IDB30E120ATMA1 - 1200V 30A EmCon Power Diode D2PAK | Infineon
MPN: IDB30E120ATMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.2 | $4.20 |
| 10 | $3.78 | $37.80 |
| 100 | $3.36 | $336.00 |
| 500 | $2.95 | $1,475.00 |
| 1,000 | $2.62 | $2,620.00 |
Drop-in alternatives for IDB30E120ATMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IDB30E120
β Drop-Inπ Reference alternative (not in catalog)
IDW30E120D2
β Drop-Inπ Reference alternative (not in catalog)
IDB30E120ATMA2
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
STTH3012D2G
β Drop-Inπ Reference alternative (not in catalog)
RHRP30120
β Drop-Inπ Reference alternative (not in catalog)
VS-30ETH06PBF
β Drop-Inπ Reference alternative (not in catalog)
IDB30E120ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Diode Type | Emitter Controlled (EmCon) Fast Soft Recovery |
| Configuration | Single |
| Peak Repetitive Reverse Voltage (VRRM) | 1200 V |
| Average Rectified Forward Current (IF(AV)) | 30 A (DC) |
| Maximum DC Output Current (Io) | 50 A |
| Forward Voltage (VF) at IF = 30 A | 2.15 V (max) |
| Non-Repetitive Peak Surge Current (IFSM) | 102 A |
| Reverse Recovery Time (trr) | <= 500 ns (> 200 mA) |
| Reverse Current (Ir) | 29.5 A |
| Maximum Junction Temperature (Tj max) | 150 Β°C |
| Operating Temperature Range | -55 Β°C to +150 Β°C |
| Package / Case | PG-TO263-3-2 (D2PAK, TO-263-3) |
| Mounting Type | Surface Mount |
| Packaging | Tape & Reel (Cut Tape / MouseReel) |
| Halogen-Free | Yes (per IEC 61249-2-21) |
| RoHS Status | Compliant |
IDB30E120ATMA1 Pin Configuration
| Pin 1 | Anode β Anode terminal (forward current enters) |
| Pin 2 | Cathode β Cathode terminal (connected to metal tab/backside heat sink) |
| Pin 3 | Anode β Anode (internally tied to pin 1) |
Forward Current vs Case Temperature (D2PAK derating)
Typical Applications
IDB30E120ATMA1 is suitable for 6 applications: 3-Phase Industrial Rectifier Bridge, PFC Boost Stage Freewheeling Diode, Solar Inverter Boost and Freewheel, Welding Inverter Output Stage, Uninterruptible Power Supply (UPS) Input Rectifier, Induction Heating Resonant Inverter.
3-Phase Industrial Rectifier Bridge
The IDB30E120ATMA1 serves as a rectifier element in 3-phase input bridges for industrial motor drives and UPS systems. Its 1200 V VRRM comfortably handles the 679 V peak of a 480 V AC rectified bus with margin for transient overshoot. The 30 A average forward current matches typical 15-20 kW drive power levels, and the EmCon soft-recovery behavior reduces commutation losses when paired with IGBT bridge legs. Recommended products include companion IGBTs IPW90R120C3 (Infineon) and gate drivers 1EDB7275FXUMA1 from the Site MPN list.
Recommended
PFC Boost Stage Freewheeling Diode
In a CCM (Continuous Conduction Mode) PFC boost converter operating at 65-100 kHz, the IDB30E120ATMA1 acts as the boost rectifier diode on the 400 V DC output. Its <= 500 ns trr and soft recovery tail are critical: a hard-recovery diode would inject reverse-recovery current back into the boost inductor and MOSFET at each switching event, increasing EMI and reducing efficiency by 2-4%. The 2.15 V forward drop at 30 A conduction translates to ~6-10 W loss at 1.5 kW PFC output, manageable on the D2PAK tab.
Recommended
Solar Inverter Boost and Freewheel
In string solar inverters, the IDB30E120ATMA1 operates as either the boost diode (low-voltage side) or freewheeling diode (high-voltage side) in the DC-DC and DC-AC stages. Its 1200 V rating covers 1000 V DC-link systems mandated by IEC 62109 for residential and commercial solar. The EmCon soft recovery is preferred over ultrafast rectifiers because the soft dI/dt slope reduces conducted EMI on the DC bus, easing the input filter requirements and helping meet FCC Part 15 / EN 55011 limits without additional shielding.
Recommended
Welding Inverter Output Stage
Welding inverters operate at high switching frequencies (20-100 kHz) with very high peak currents and harsh thermal cycling. The IDB30E120ATMA1 is used as the output rectifier in the secondary-side high-frequency transformer rectifier stage or as the freewheel across the IGBT output stage. Its 102 A surge current rating handles the welding arc strike transients, and its 150 Β°C Tj max accommodates the elevated ambient inside a sealed welding cabinet. The D2PAK package allows bolt-down heatsink mounting for the high thermal load.
Recommended
Uninterruptible Power Supply (UPS) Input Rectifier
In on-line UPS systems, the IDB30E120ATMA1 functions as the slow-bridge rectifier at the AC input stage, charging the DC bus capacitors from the 208/380/480 V AC mains. Because line-frequency rectification (50/60 Hz) does not require fast recovery, the EmCon characteristic is sufficient rather than a hyperfast part, and the 1200 V rating handles the rectified peak with comfortable margin. The 30 A capability supports 10-15 kVA UPS units with appropriate heatsinking on the D2PAK tab.
Recommended
Induction Heating Resonant Inverter
In ZVS/ZCS resonant inverters for induction cooking and industrial induction heating (typically 20-50 kHz), the IDB30E120ATMA1 is used in the bridge legs alongside IGBTs. The EmCon soft recovery is well-matched to the zero-voltage-switching transition, where any residual reverse-recovery current would short-circuit the bus through the diode during the dead-time transition. The 1200 V rating covers the rectified 320 V or 540 V DC bus of single-phase 230 V or three-phase 400 V mains respectively.
Recommended
Recommended Products Summary
Engineering reference data for IDB30E120ATMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IDB30E120 | IDW30E120D2 | IDB30E120ATMA2 | STTH3012D2G | RHRP30120 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | onsemi |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same | PG-TO263-3-2 (D2PAK) - same |
| Peak Reverse Voltage (VRRM) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Average Forward Current (IF(AV)) | 30 A | 30 A | 30 A (dual) | 30 A | 30 A | 30 A |
| Forward Voltage (VF) at 30A | 2.15 V (max) | 2.15 V | 2.15 V | 2.15 V | [DATA_NEEDED] | [DATA_NEEDED] |
| Reverse Recovery Time (trr) | <= 500 ns (soft) | <= 500 ns (soft) | <= 500 ns (soft) | <= 500 ns (soft) | ~70 ns (ultrafast) | ~70 ns (hyperfast) |
| Surge Current (IFSM) | 102 A | 102 A | 102 A | 102 A | [DATA_NEEDED] | [DATA_NEEDED] |
| Maximum Junction Temperature | 150 Β°C | 150 Β°C | 150 Β°C | 150 Β°C | 175 Β°C | 175 Β°C |
| Recovery Characteristic | Soft (EmCon) | Soft (EmCon) | Soft (EmCon) | Soft (EmCon) | Hard (ultrafast) | Hard (hyperfast) |
Key Differentiators
- EmCon soft recovery reduces EMI vs ultrafast rectifiers (vs STTH3012D2G)
- Higher surge current rating for inrush loads (vs RHRP30120)
- Infineon-built silicon with proven long-term reliability (vs Cross-brand equivalents (ST, onsemi))
Design Notes
Estimated: at IF=30 A and VF=2.15 V, the IDB30E120ATMA1 dissipates ~64.5 W of conduction loss. The D2PAK (PG-TO263-3-2) package has a junction-to-case thermal resistance (RΞΈJC) of approximately 1.0 Β°C/W and RΞΈJA of ~40 Β°C/W on a standard 4-layer 1-oz FR4 board with 1 inΒ² of copper tab area. Without a heatsink, junction temperature would rise 40 Β°C Γ 64.5 W = ~2580 Β°C above ambient, far exceeding the 150 Β°C Tj max. A bolt-on heatsink with RΞΈSA < 0.5 Β°C/W is required for continuous full-current operation. Sized copper area or forced-air cooling can substitute in lower-power applications.
Mount the D2PAK tab directly onto a copper pad of at least 1 square inch (6.45 cmΒ²) of 2-oz copper on the top layer, with thermal vias (typically a 4Γ4 array of 0.3 mm drilled, plated-through holes) stitching to inner-layer copper planes. Apply a thin (~25 Β΅m) layer of thermal interface material (TIM) if a heatsink is bolted on. Keep signal traces away from the tab pad to avoid coupling switching noise; route the anode traces with short, wide copper (β₯ 0.5 mm width per ampere). Solder paste stencil aperture should be slightly smaller than the tab pad to control solder voiding.
Do not assume the IDB30E120ATMA1 is interchangeable with SiC Schottky diodes (e.g., IDH10SG120C5) - the higher VF of 2.15 V vs ~1.8 V and the presence of reverse recovery mean the EmCon diode dissipates more power and produces recovery losses. Reverse polarity mounting will forward-bias the diode instantly and likely destroy it within milliseconds due to unlimited current. Always verify the cathode tab orientation against the PCB silkscreen before reflow. Also note that the IF(AV) = 30 A rating assumes TC < 110 Β°C; operation at full current above this temperature requires derating per the SOA curve.
When using the IDB30E120ATMA1 as an IGBT freewheeling diode, minimize the commutation loop area between the IGBT collector, the diode cathode (tab), and the diode anode. This loop carries the high dI/dt reverse-recovery current; minimizing its inductance reduces the recovery-induced voltage overshoot across the IGBT. Place the diode directly adjacent to the IGBT with overlapping or interleaved copper pours. Add a small RC snubber (e.g., 10 Ξ© + 470 pF) across the diode only if measured ringing exceeds the IGBT VCE rating under worst-case conditions.
Compliance Information
RoHS compliant per Infineon product page. Halogen-free per IEC 61249-2-21 as stated by the manufacturer. AEC-Q100 automotive qualification not claimed for this part - for automotive-grade EmCon diodes, see the IDB30E120 automotive variant if available.
