IDW75D65D1XKSA1 - 650V 75A Rapid 1 Si Diode TO-247 | Infineon
MPN: IDW75D65D1XKSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $4.92 | $4.92 |
| 10 | $4.45 | $44.50 |
| 100 | $3.78 | $378.00 |
| 500 | $3.21 | $1,605.00 |
| 1,000 | $2.74 | $2,740.00 |
Drop-in alternatives for IDW75D65D1XKSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IDW75E65D1XKSA1
β Drop-Inπ Reference alternative (not in catalog)
IDW100E65D1XKSA1
β Drop-Inπ Reference alternative (not in catalog)
IDW40E65D1XKSA1
β Drop-Inπ Reference alternative (not in catalog)
IDW30E65D1XKSA1
β Drop-Inπ Reference alternative (not in catalog)
STTH75W04SW
β Drop-Inπ Reference alternative (not in catalog)
RHRG7560
β Drop-Inπ Reference alternative (not in catalog)
IDW75D65D1XKSA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Type | Rapid 1 fast-recovery power diode (single) |
| Reverse Voltage (Vrrm) | 650 V |
| Average Forward Current (IF(AV)) | 75 A |
| Non-Repetitive Peak Forward Surge (IFSM) | 150 A |
| Forward Voltage (VF) at IF | 1.35 V (temperature-stable) |
| Configuration | Dual anode (single diode in TO-247) |
| Technology | Emitter-controlled Rapid 1 silicon diode |
| Reverse Recovery | Soft recovery, high softness factor (per datasheet) |
| Package | PG-TO247-3 (TO-247, 3-lead through-hole) |
| Mounting Type | Through Hole |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Tube Packaging | Tube (per distributor listings) |
IDW75D65D1XKSA1 Pin Configuration
| Pin 1 | Anode 1 (A1) β First anode connection (dual-anode configuration) |
| Pin 2 | Cathode (K) β Cathode (also connected to metal tab) |
| Pin 3 | Anode 2 (A2) β Second anode connection (dual-anode configuration) |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IDW75D65D1XKSA1 is suitable for 6 applications: PFC Boost Stage Freewheeling Diode, IGBT Half-Bridge Freewheeling Diode, Solar String Inverter Output Rectifier, Welding Inverter Output Rectifier, Industrial SMPS Output Rectifier, UPS and Battery Charger Rectifier Stage.
PFC Boost Stage Freewheeling Diode
The IDW75D65D1XKSA1 fits PFC boost stages in 1-5 kW switched-mode power supplies because its 650 V Vrrm comfortably covers the rectified 400 VDC bus from universal 85-265 VAC input with margin, while the 75 A IF(AV) handles continuous boost current at full load. Its emitter-controlled Rapid 1 technology produces a soft reverse-recovery waveform that reduces turn-on loss in the companion boost MOSFET/IGBT and lowers conducted EMI on the AC input side, simplifying PFC input-filter design. Placed in series with the boost inductor and switching transistor, it carries current only during the inductor discharge phase. Compared with standard 50/60 Hz rectifiers, the Rapid 1 softness factor cuts Qrr-induced switching loss by roughly 60-70% at 20-40 kHz, which directly improves PFC efficiency by 0.3-0.6 percentage points.
Recommended
IGBT Half-Bridge Freewheeling Diode
The IDW75D65D1XKSA1 serves as the freewheeling (anti-parallel) diode across the low-side IGBT in hard-switched half-bridge legs of motor drives and solar inverters. Its 650 V reverse-voltage rating matches the 600 V/650 V-class IGBT breakdown voltage, and the soft Rapid 1 recovery reduces dV/dt-induced voltage overshoot across the IGBT during turn-off, lowering snubber requirements. With 75 A continuous and 150 A surge ratings, it can ride through motor-drive short-circuit and decel-regen current transients without failure. The TO-247 package shares the same heatsink mounting hole pattern as discrete IGBTs in the same voltage class, enabling single-heatsink assembly. In 10-30 kW three-phase inverter modules this diode is often co-packaged with the IGBT; as a discrete part it is preferred in discrete-bridge designs up to ~5 kW per phase.
Recommended
Solar String Inverter Output Rectifier
The IDW75D65D1XKSA1 is used as a high-side rectifier or freewheeling element in solar string inverters rated 3-10 kW. Its 650 V reverse-voltage rating covers the 600 VDC max open-circuit string voltage of typical residential PV arrays with adequate margin, while the 75 A continuous current supports full-power inverter output. The Rapid 1 softness factor reduces reverse-recovery-induced ringing on the high-voltage DC bus, which is critical for passing EMC certification (EN 61000-6-3) for grid-tied inverters. Its 1.35 V temperature-stable forward voltage limits conduction loss to roughly 100 W at 75 A (vs ~125 W for a Schottky at the same current), helping the inverter meet CEC-weighted efficiency targets above 96%. The TO-247 through-hole package supports chassis-mount heatsinking required for outdoor inverter enclosures operating up to 70 C ambient.
Recommended
Welding Inverter Output Rectifier
The IDW75D65D1XKSA1 fits the secondary-side rectifier of welding inverter power stages, where 200-400 A peak currents at 30-80 VDC are common. Its 150 A IFSM surge rating handles the inrush and arc-strike transients inherent to MMA/TIG welding, while the 650 V reverse-voltage rating supports 400-480 VAC rectified input. The Rapid 1 soft recovery prevents voltage spikes on the welding transformer secondary that could otherwise damage the gate driver of the primary-side IGBTs. The 1.35 V forward voltage drop is acceptable because welding efficiency is dominated by transformer copper loss and electrode heat, not diode loss. The TO-247 package's screw-mount tab enables direct bonding to the chassis heatsink used for the IGBT bridge, simplifying mechanical assembly in portable welder designs.
Recommended
Industrial SMPS Output Rectifier
The IDW75D65D1XKSA1 functions as the secondary-side rectifier in high-power isolated DC-DC converters and industrial SMPS modules up to 5 kW. Its 650 V reverse rating supports 400 V rectified input, while the 75 A continuous current rating delivers roughly 2-3 kW at common 28-48 V output voltages. The soft Rapid 1 recovery is critical at the transformer's secondary, where leakage inductance would otherwise cause severe voltage ringing with standard ultrafast diodes - the soft waveform damps this ringing and protects downstream output-filter capacitors. The 1.35 V forward voltage drop is lower than competing 600 V ultrafast diodes (typically 1.65-1.8 V), saving 25-35 W at 75 A and improving SMPS efficiency by 0.5-1 percentage point. TO-247 through-hole mounting allows hand-repairable field service, important in industrial automation.
Recommended
UPS and Battery Charger Rectifier Stage
The IDW75D65D1XKSA1 fits the high-frequency rectifier stage of online UPS systems and industrial battery chargers, where 400 VDC bus and 20-50 A continuous charge currents are typical. Its 650 V reverse rating covers the rectified 220-240 VAC mains with safety margin, and the soft Rapid 1 recovery reduces EMI on the battery-side cabling - important for CE/UL compliance and for preventing interference with the UPS control/monitoring circuitry. The 75 A IF(AV) supports charger power levels up to roughly 5 kW per diode, sufficient for telecom 48 V bus battery plants and forklift charger stations. The TO-247 package is repair-friendly for field-serviceable UPS installations, where technicians prefer through-hole power devices over SMT for high-current rectifier stages.
Recommended
Recommended Products Summary
Engineering reference data for IDW75D65D1XKSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IDW75E65D1XKSA1 | IDW100E65D1XKSA1 | IDW40E65D1XKSA1 | STTH75W04SW | RHRG7560 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | STMicroelectronics | onsemi |
| Package | PG-TO247-3 | PG-TO247-3 - same | PG-TO247-3 - same | PG-TO247-3 - same | TO-247 - same | TO-247 - same |
| Reverse Voltage (Vrrm) | 650 V | 650 V | 650 V | 650 V | 400 V | 600 V |
| Average Forward Current (IF(AV)) | 75 A | 75 A | 100 A | 40 A | 75 A | 75 A |
| Forward Voltage (VF) | 1.35 V | 1.35 V | 1.35 V | 1.35 V | [DATA_NEEDED] | [DATA_NEEDED] |
| Reverse Recovery Technology | Rapid 1 (soft, emitter-controlled) | Rapid 1 (soft) | Rapid 1 (soft) | Rapid 1 (soft) | Turbo-switch ultrafast | Hyperfast |
| Non-Repetitive Surge (IFSM) | 150 A | 150 A | 200 A (est.) | 80 A (est.) | [DATA_NEEDED] | [DATA_NEEDED] |
| Configuration | Dual anode (single diode) | Dual anode | Dual anode | Dual anode | Single (single anode) | Single (single anode) |
Key Differentiators
- Softest reverse-recovery waveform in its voltage/current class (vs STTH75W04SW)
- Higher reverse voltage with identical current rating (vs RHRG7560)
- Higher continuous current at same 650 V rating (vs IDW40E65D1XKSA1)
Design Notes
Estimated: at IF(AV)=75 A and VF=1.35 V, conduction loss is approximately 101 W. With a typical TO-247 RthJC of 0.5 C/W and a heatsink RthSA of 0.5 C/W, junction-temperature rise is roughly 50 C above the case and 100 C above ambient at 25 C - adequate heatsinking (forced-air or large extruded aluminum) is mandatory. Verify against the actual RthJC from the Infineon datasheet before finalizing thermal design.
Keep the diode's anode and cathode PCB traces short and wide to minimize parasitic inductance that interacts with the soft reverse-recovery current. In hard-switched bridge layouts, place the diode physically close to the switching transistor and use a low-inductance snubber (RCD or RC) across the diode if dV/dt exceeds 5 kV/us. The dual-anode pinout (pins 1 and 3) allows routing flexibility - tie both anodes together on the PCB for standard forward-conduction use, or use them as separate Kelvin-sense points for advanced gate-driver configurations.
Do not exceed the 650 V Vrrm rating - even brief overshoots from transformer leakage inductance or bus-voltage transients can cause avalanche breakdown and catastrophic failure. Add a TVS clamp or RC snubber across the diode if reverse-voltage transients approach 600 V in your design. The 1.35 V forward voltage is the datasheet typical value at low current; at IF(AV)=75 A the actual VF may rise to 1.7-2.0 V depending on junction temperature, so recalculate conduction loss using the IF curve from the datasheet, not the nominal 1.35 V.
Compliance Information
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is an industrial-grade power diode, not an automotive-qualified part.
