IMCQ120R007M2HXTMA1 - 1200V 7mOhm CoolSiC MOSFET | Infineon
MPN: IMCQ120R007M2HXTMA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $78.5 | $78.50 |
| 10 | $72.3 | $723.00 |
| 100 | $65.9 | $6,590.00 |
| 500 | $59.2 | $29,600.00 |
| 1,000 | $53.4 | $53,400.00 |
IMCQ120R007M2HXTMA1 Overview
A silicon-carbide MOSFET (SiC MOSFET) is a wide-bandgap (WBG) power transistor built on a 4H-SiC substrate instead of conventional silicon. Compared with silicon IGBTs and superjunction MOSFETs, SiC MOSFETs offer lower switching losses, higher switching frequency capability, higher junction temperature tolerance, and lower on-resistance per unit area. Within the power-device hierarchy, SiC MOSFETs sit above silicon MOSFETs and IGBTs and are typically deployed in the 600-1700 V, >5 kW segment of power conversion.
Key features of this CoolSiC G2 device include an integrated gate-driver robustness profile, low Qrr body diode behavior, and a gate threshold tailored for 0-18 V standard gate drivers. The Q-DPAK top-side cooling solution provides an outstanding thermal impedance and simplifies mechanical assembly, reducing overall system cost in high-density power converters. The wide-bandgap design enables hard-switching topologies at multi-kilowatt power levels without exceeding junction temperature limits.
Typical applications include solar string inverters and central PV inverters, electric-vehicle (EV) on-board chargers and DC-DC converters, industrial servo drives and uninterruptible power supplies, and high-power telecom rectifiers. In these systems the part enables higher switching frequency and smaller magnetics, or higher continuous power density at the same switching frequency as silicon IGBTs.
When designing with this part, follow the recommended gate-drive voltage of 18 V (with -3 V to -5 V turn-off) and place the gate-drive loop inductance below 5 nH to avoid parasitic turn-on. The top-side cooled Q-DPAK package requires a thermal interface material (TIM) and an attached cold-plate or heatsink on the top surface, not the PCB land side.
This page synthesizes distributor pricing, parametric proximity data, and practical design notes that go beyond the manufacturer datasheet to accelerate engineering selection.
Drop-in alternatives for IMCQ120R007M2HXTMA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IMCQ120R010M2HXTMA1
β Drop-Inπ Reference alternative (not in catalog)
IMCQ120R007M2HXTMA1
β Drop-Inβ In Stock
$53.4 / Unit
View Datasheet βIMW120R007M2HXTMA1
β Drop-Inπ Reference alternative (not in catalog)
C3M0075120K
β Drop-Inπ Reference alternative (not in catalog)
NTHL075N120SC1
β Drop-Inπ Reference alternative (not in catalog)
SCT2080KE
β Drop-Inπ Reference alternative (not in catalog)
IMCQ120R007M2HXTMA1 Maximum Ratings & Electrical Characteristics
| Technology | Silicon Carbide (SiC) MOSFET, Generation 2 (CoolSiC G2) |
| Channel Type | N-Channel |
| Drain-Source Voltage (Vdss) | 1200 V |
| Typical On-Resistance (Rds(on)) | 7 mOhm |
| Continuous Drain Current (Id) at Tc | 257 A |
| Power Dissipation (Pd) at Tc | 1172 W |
| Package | PG-HDSOP-22 (Q-DPAK top-side cooled) |
| Mounting Type | Surface Mount |
| Cooling Configuration | Top-side cooled (thermal pad on package top) |
| RoHS Status | Compliant |
IMCQ120R007M2HXTMA1 Pin Configuration
| Pin 1 | Gate β Gate input - drive with 18V on / -3V to -5V off |
| Pin 2 | Drain β Drain connection (high-voltage node) |
| Pin 3 | Source β Source connection (Kelvin connection recommended for gate return) |
| Pin Thermal Pad | Thermal Pad (top side) β Top-side exposed thermal pad for cold-plate / heatsink mounting |
Safe Operating Area (DC) - IMCQ120R007M2H
Typical Applications
IMCQ120R007M2HXTMA1 is suitable for 7 applications: Solar String Inverters, EV On-Board Chargers, Industrial Servo Drives, Telecom and Datacenter Rectifiers, Uninterruptible Power Supplies (UPS), Solid-State Transformer Stages, Battery Energy Storage Systems (BESS).
Solar String Inverters
The IMCQ120R007M2HXTMA1 is well-suited for 1500 V DC solar string inverter applications. Its 1200 V Vdss provides adequate headroom for 1500 V bus architectures, while the 7 mOhm Rds(on) and G2 CoolSiC switching loss profile enable >99% peak efficiency in hard-switching boost and full-bridge topologies. The top-side cooled Q-DPAK package allows direct cold-plate attachment, enabling 30-50 kW power stages at higher switching frequencies (50-100 kHz) than silicon IGBTs, which reduces magnetic and capacitor volume. Place the SiC MOSFETs with minimal gate-drive loop inductance (<5 nH) and use 18 V / -5 V gate drive with proper DESAT protection.
Recommended
EV On-Board Chargers
The IMCQ120R007M2HXTMA1 fits 800 V EV on-board charger (OBC) PFC and DCDC stages. The 1200 V rating comfortably handles 800 V traction bus with 400 V margin, and the 7 mOhm Rds(on) keeps conduction losses below 1.5% at 22 kW OBC power levels. The G2 CoolSiC's low Qrr body diode eliminates reverse-recovery loss concerns in totem-pole bridgeless PFC topologies, which are now the standard topology for high-efficiency OBCs. The Q-DPAK top-side cooling supports direct attachment to the OBC chassis cold-plate, simplifying mechanical design.
Recommended
Industrial Servo Drives
The IMCQ120R007M2HXTMA1 supports three-phase 690 V industrial servo drives and variable-frequency drives. The 1200 V Vdss handles 690 V rectified bus with substantial margin, and the 7 mOhm Rds(on) enables inverter stages up to 100 kW at switching frequencies up to 40 kHz - 2-3x higher than silicon IGBT alternatives. This higher switching frequency shrinks output filter inductors and capacitors, reducing overall drive size and weight. Top-side cooling on the Q-DPAK is particularly beneficial in sealed industrial enclosures where bottom-cooled parts struggle to dissipate heat.
Recommended
Telecom and Datacenter Rectifiers
The IMCQ120R007M2HXTMA1 targets high-power telecom and hyperscaler datacenter rectifiers operating from three-phase 380-480 V AC inputs. In totem-pole bridgeless PFC stages, the SiC MOSFET replaces bridgeless-diode plus IGBT combinations and improves efficiency by 1-2 percentage points. The top-side cooled Q-DPAK simplifies liquid-cooled rectifier designs where cold-plates are commonly attached to the top of power components. High switching frequency capability (>50 kHz) reduces bulk capacitor count, lowering system cost and improving power density.
Recommended
Uninterruptible Power Supplies (UPS)
The IMCQ120R007M2HXTMA1 is appropriate for online double-conversion UPS inverter stages at the 20-100 kVA power range. The 1200 V rating supports 800 V DC link voltages used in modern high-density UPS designs, and the 7 mOhm Rds(on) and G2 switching loss profile enable 96-97% inverter efficiency, exceeding the typical 94-95% of silicon IGBT-based designs. Top-side cooling on Q-DPAK helps in UPS form factors where vertical power module stacking is common and bottom-side cooling is mechanically impractical.
Recommended
Solid-State Transformer Stages
The IMCQ120R007M2HXTMA1 fits medium-voltage solid-state transformer (SST) DAB (dual-active-bridge) and LLC stages in traction and grid-tied applications. The 1200 V Vdss supports 800 V and 1500 V DC link stages; the 7 mOhm Rds(on) and G2 CoolSiC switching behavior enable DAB stages operating at 50-100 kHz with >98% stage efficiency. Top-side cooling is critical in compact SST modules where stacked power stages benefit from cold-plates that attach directly to the top of each device.
Recommended
Battery Energy Storage Systems (BESS)
The IMCQ120R007M2HXTMA1 supports 1500 V DC battery energy storage system DC-DC converters connecting battery racks to the medium-voltage bus. The 1200 V Vdss and 7 mOhm Rds(on) support 250 kW+ bidirectional DC-DC stages with >98% round-trip efficiency. The Q-DPAK top-side cooled package is preferred in containerized BESS designs where liquid cooling is implemented via cold-plates attached directly to the top of power modules, providing uniform thermal management across the rack.
Recommended
Recommended Products Summary
Engineering reference data for IMCQ120R007M2HXTMA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IMCQ120R010M2HXTMA1 | IMW120R007M2HXTMA1 | C3M0075120K | NTHL075N120SC1 | SCT2080KE |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Wolfspeed | onsemi | ROHM Semiconductor |
| Package | PG-HDSOP-22 (Q-DPAK top-side cooled) | PG-HDSOP-22 (Q-DPAK top-side cooled) - same | TO-247 | TO-247-4 | TO-247-4L | TO-247 |
| Technology | SiC MOSFET G2 (CoolSiC) | SiC MOSFET G2 (CoolSiC) | SiC MOSFET G2 (CoolSiC) | SiC MOSFET (C3M) | SiC MOSFET (EliteSiC) | SiC MOSFET (Gen-3) |
| Drain-Source Voltage (Vdss) | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V | 1200 V |
| Typical Rds(on) | 7 mOhm | 10 mOhm (+43%) | 7 mOhm (0%) | 7 mOhm (0%) | 7.5 mOhm (+7%) | 80 mOhm (+1043%) |
| Cooling Configuration | Top-side cooled Q-DPAK | Top-side cooled Q-DPAK | Through-hole with bottom-side tab | Through-hole with bottom-side tab | Through-hole with bottom-side tab | Through-hole with bottom-side tab |
Key Differentiators
- Top-side cooled Q-DPAK package enables direct cold-plate attachment (vs IMW120R007M2HXTMA1 (TO-247))
- Generation 2 CoolSiC technology with optimized switching losses (vs C3M0075120K (Wolfspeed C3M))
- Lower Rds(on) than competing 1200 V SiC MOSFET alternatives (vs NTHL075N120SC1 (onsemi))
Design Notes
The Q-DPAK top-side cooled package of the IMCQ120R007M2HXTMA1 exposes the thermal pad on the package top surface for direct cold-plate or heatsink mounting. Use a high-performance thermal interface material (TIM) with conductivity >5 W/mK and applied thickness 50-100 um. Estimated: at 100 W dissipation per device with a high-quality TIM and direct aluminum cold-plate, junction-to-cold-plate thermal resistance is approximately 0.15 C/W, allowing continuous operation at Tj well below the 175 C maximum.
Place the gate-drive loop inductance below 5 nH by routing the gate driver output directly to the MOSFET gate pin with a Kelvin Source return. The PG-HDSOP-22 package provides a dedicated Kelvin source pin for this purpose. Keep the power loop (DC+ to MOSFET drain to MOSFET source to DC-) area under 1 cmΒ² to minimize stray inductance, which reduces voltage overshoot and switching loss. Use a gate-drive supply of +18 V on / -3 V to -5 V off for CoolSiC G2 MOSFETs.
Do not apply gate voltages above 20 V or below -10 V; CoolSiC G2 MOSFETs have lower absolute maximum Vgs ratings than silicon MOSFETs. Avoid paralleling multiple IMCQ120R007M2HXTMA1 without proper symmetry - the 7 mOhm Rds(on) is low enough that small layout asymmetries can cause significant current imbalance. Always provide proper DESAT or overcurrent protection since SiC MOSFETs have very short short-circuit withstand times (~2-3 us) compared with silicon IGBTs (~10 us).
CoolSiC G2 MOSFETs switch much faster than silicon IGBTs (dv/dt >50 kV/us), which can cause EMI issues if not managed. Use a multi-layer PCB with a continuous ground plane beneath the power loop, and add common-mode chokes on the gate-driver output if emissions exceed CISPR 11/22 limits. The Q-DPAK package's smaller loop area helps reduce radiated EMI versus larger TO-247 implementations. For very high-frequency designs (>100 kHz), consider using a separate gate-driver board to minimize parasitic loop inductance.
Compliance Information
RoHS and REACH compliance per Infineon product page. AEC-Q100 automotive qualification is not applicable - this part is targeted at industrial markets. For automotive-grade versions, look for the AEQ prefix or contact Infineon automotive sales.
