IR4427PBF - Dual Low-Side Gate Driver, 2.3A/3.3A, 20V, DIP-8 | Infineon
MPN: IR4427PBF β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.92 | $1.92 |
| 10 | $1.62 | $16.20 |
| 100 | $1.18 | $118.00 |
| 500 | $0.92 | $460.00 |
| 1,000 | $0.78 | $780.00 |
IR4427PBF Overview
A low-side gate driver is a power-management IC that translates low-current logic-level control signals (e.g. 3.3 V or 5 V from a microcontroller or PWM controller) into the high-current gate charge and discharge pulses required to switch a power MOSFET or IGBT. The driver sits between the controller and the power switch's source-referenced gate, providing a low-impedance push-pull output stage capable of sourcing/sinking amperes in tens of nanoseconds. In the broader taxonomy, gate drivers belong to Power Management > Gate/Drivers > MOSFET/IGBT Drivers, sitting between signal-level control logic and the high-power switching stage.
Key features of the IR4427PBF include CMOS Schmitt-triggered inputs that are compatible with standard CMOS or LSTTL outputs, matched propagation delay between both channels (ensuring symmetric timing in half-bridge or dual-switch topologies), and a high-pulse-current buffer stage designed for minimum driver cross-conduction. Its non-inverting logic (outputs in phase with inputs) makes it suitable as a direct MOSFET/IGBT gate driver without software inversion.
Architecturally, the IR4427 uses proprietary latch-immune CMOS technology for ruggedized monolithic construction, with separate input logic, level-shifting, and high-current output buffer stages on a single die. The matched propagation delay (~85 ns typical) ensures both channels switch within nanoseconds of each other, which is critical for synchronous rectifiers, half-bridges, and Class-D amplifiers where timing mismatch causes shoot-through or distortion.
Typical applications include DC-DC converters using synchronous rectifiers, motor drive H-bridge low-side switches, solenoid and relay drivers, electronic ballasts, and Class-D audio amplifier output stages. The 20 V abs-max gate supply makes it compatible with standard 12 V MOSFET gate drive as well as higher-voltage IGBTs.
When designing with this part, note that the PDIP-8 package has limited thermal dissipation (~100 C/W theta_JA) and the absolute maximum VCC is 20 V. Decoupling VCC with a 0.1 Β΅F ceramic capacitor placed within 5 mm of the supply pin is essential; high di/dt gate currents create voltage spikes that can trigger latch-up without proper bypassing.
This page synthesizes distributor pricing, drop-in pin-compatible alternatives, application circuits, and design considerations not consolidated in the manufacturer datasheet, helping engineers select and qualify the IR4427PBF for new designs or as a second-source on existing layouts.
Drop-in alternatives for IR4427PBF β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IR4427STRPBF
β Drop-Inπ Reference alternative (not in catalog)
IR4426PBF
β Drop-Inπ Reference alternative (not in catalog)
IR4428PBF
β Drop-Inπ Reference alternative (not in catalog)
IRS2003SPBF
β Drop-Inπ Reference alternative (not in catalog)
UCC27624DR
β Drop-Inπ Reference alternative (not in catalog)
IR4427PBF Maximum Ratings & Electrical Characteristics
| Driver Type | Low-Side |
| Number of Drivers | 2 (Dual) |
| Logic Input | Non-Inverting |
| Gate Drive Supply (VCC) | 6 V to 20 V |
| Source Current (typ) | 2.3 A |
| Sink Current (typ) | 3.3 A |
| Continuous Output Current (per channel) | 1.5 A |
| Turn-On Delay (ton, typ) | 85 ns |
| Turn-Off Delay (toff, typ) | 65 ns |
| Rise Time | 15 ns |
| Fall Time | 10 ns |
| Input Compatibility | CMOS / LSTTL (Schmitt-triggered) |
| Input Threshold Logic | In-phase with output (non-inverting) |
| Operating Temperature | -40 C to +150 C (TJ) |
| Package | 8-PDIP (through-hole) |
| Lead-Free (PBF suffix) | Yes (Pb-free) |
| Cross-Conduction Protection | Yes (minimum cross-conduction buffer stage) |
| Matched Propagation Delay | Yes (both channels) |
| Latch Immunity | Proprietary CMOS latch-immune technology |
| RoHS Status | Compliant |
IR4427PBF Pin Configuration
| Pin 1 | INA β Logic input channel A (CMOS/LSTTL compatible, Schmitt-triggered) |
| Pin 2 | INB β Logic input channel B (CMOS/LSTTL compatible, Schmitt-triggered) |
| Pin 3 | NC β No internal connection (reserved) |
| Pin 4 | NC β No internal connection (reserved) |
| Pin 5 | VCC β Gate drive supply voltage (6 V to 20 V) |
| Pin 6 | GND β Ground reference |
| Pin 7 | OUTA β Gate drive output channel A (in-phase with INA) |
| Pin 8 | OUTB β Gate drive output channel B (in-phase with INB) |
Typical Applications
IR4427PBF is suitable for 7 applications: Synchronous Rectifier in DC-DC Converters, Brushed DC Motor Low-Side Drive, Solenoid and Relay Driver, Class-D Audio Amplifier Output Stage, Electronic Ballast for HID Lighting, Industrial Switch-Mode Power Supply (SMPS), Half-Bridge Inverter Low-Side Switch Drive.
Synchronous Rectifier in DC-DC Converters
The IR4427PBF is well-suited for driving the low-side synchronous rectifier MOSFET in buck, forward, or half-bridge DC-DC converters. Its 2.3 A source and 3.3 A sink current can charge and discharge the gate of most sub-100 A MOSFETs in under 50 ns, minimizing switching losses at frequencies up to ~500 kHz. The matched propagation delay between both channels ensures the high-side and low-side switches never overlap, preventing shoot-through. Place the driver within 5 mm of the MOSFET gate to minimize parasitic inductance; add a 10 ohm gate resistor to dampen ringing. The 6-20 V VCC range directly accepts the 12 V auxiliary rail common in telecom and server power supplies.
Recommended
Brushed DC Motor Low-Side Drive
The IR4427PBF drives the low-side N-channel MOSFET in brushed DC motor control circuits where the motor connects to V+ and the low-side switch pulls the other terminal to ground. Its 1.5 A continuous output per channel can PWM-switch motors up to several amps at 20-50 kHz with minimal switching loss. The non-inverting logic means the microcontroller's PWM output directly controls gate drive, simplifying firmware. The matched channel-to-channel delay (within a few nanoseconds) is useful when driving dual-motor or bidirectional configurations. For H-bridge bidirectional control, pair two IR4427 channels or use IR2109SPBF from the same Infineon family for high-side drive.
Recommended
Solenoid and Relay Driver
The IR4427PBF drives inductive loads like solenoids, relays, contactors, and valve actuators by switching the low-side N-channel MOSFET that sinks current through the coil. Its 3.3 A sink current is more than sufficient for sub-20 A coils, and the 85 ns typical propagation delay enables fast PWM current regulation or peak-and-hold control strategies. The dual-channel design is convenient for driving two solenoids independently (e.g. HVAC dampers, fluid valves) from a single IC. For 24 V automotive or industrial solenoid rails, ensure VCC stays within the 6-20 V absolute maximum by using a separate 12 V regulated supply to power the driver's VCC pin.
Recommended
Class-D Audio Amplifier Output Stage
The IR4427PBF serves as the gate driver in low-power Class-D audio amplifiers driving the low-side output MOSFETs of an H-bridge output stage. Its matched propagation delay between both channels is critical for symmetric switching, which directly impacts THD (total harmonic distortion) at the speaker output. The 15 ns typical rise time produces clean 100-500 kHz PWM switching edges with minimal dead-time distortion. For full-bridge audio, four IR4427 channels (or two dual drivers) drive the four output FETs, while a dedicated modulator IC generates the PWM from the analog audio input. The 20 V VCC maximum supports standard 18 V audio rail designs.
Recommended
Electronic Ballast for HID Lighting
The IR4427PBF drives the low-side IGBT or MOSFET in electronic ballast circuits for high-intensity discharge (HID) lamps, fluorescent ballasts, and LED drivers. Its 2.3 A source / 3.3 A sink capability can switch high-current IGBTs in resonant half-bridge topologies at 30-100 kHz. The matched channel delay is essential for symmetric resonant operation to maximize efficiency and minimize EMI. The CMOS Schmitt-triggered inputs allow direct connection to microcontroller or analog oscillator control signals without external level shifting. With its 20 V abs-max VCC, the driver works with standard 15 V auxiliary rails from ballast power-factor-correction (PFC) front ends.
Recommended
Industrial Switch-Mode Power Supply (SMPS)
The IR4427PBF drives the primary-side low-side MOSFET in industrial switch-mode power supplies such as 24 V DIN-rail converters, telecom bricks, and factory automation power modules. Its matched channel delay, 85 ns propagation, and 2.3 A/3.3 A drive strength handle continuous hard-switching at 100-300 kHz with reliable noise margins. The latch-immune CMOS construction provides ruggedness against voltage transients common in industrial environments. The PDIP-8 through-hole package is preferred for industrial designs where mechanical robustness and hand-rework capability outweigh the size advantage of SMD alternatives. For second-source qualification, the SOIC-8 IR4427STRPBF serves as the surface-mount equivalent with identical electrical characteristics.
Recommended
Half-Bridge Inverter Low-Side Switch Drive
In half-bridge and full-bridge inverter topologies for solar inverters, motor drives, or UPS systems, the IR4427PBF drives the low-side IGBT/MOSFET while a companion high-side driver (such as IR2110SPBF or IR2304SPBF) drives the floating high-side switch. Each IR4427 channel has matched propagation delay, ensuring both the high-side and low-side devices receive their gate signals with sub-100 ns skew, critical for preventing shoot-through that destroys the power switches. The 6-20 V gate drive range is compatible with standard IGBT modules rated at 600-1200 V. Designers should add dead-time control in firmware to complement the driver's matched-delay capability.
Recommended
Recommended Products Summary
Engineering reference data for IR4427PBF β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IR4427STRPBF | IR4426PBF | IR4428PBF | IRS2003SPBF | UCC27624DR |
|---|---|---|---|---|---|---|
| Package | 8-PDIP (through-hole) | 8-SOIC (SMD equivalent) | 8-PDIP (same) | 8-PDIP (same) | 8-SOIC (SMD variant) | 8-SOIC (SMD TI equivalent) |
| Brand | Infineon Technologies | Infineon Technologies (same-brand) | Infineon Technologies (same-brand) | Infineon Technologies (same-brand) | Infineon Technologies (same-brand) | Texas Instruments (cross-brand) |
| Driver Type | Dual Low-Side | Dual Low-Side | Dual Low-Side | Dual Low-Side | Half-Bridge (high+low side) | Dual Low-Side |
| Source Current (typ) | 2.3 A | 2.3 A | 2.3 A | 2.3 A | 1.0 A | 2.6 A |
| Sink Current (typ) | 3.3 A | 3.3 A | 3.3 A | 3.3 A | 1.0 A | 5.0 A |
| VCC Range | 6 V to 20 V | 6 V to 20 V | 6 V to 20 V | 6 V to 20 V | 10 V to 20 V | 4.5 V to 26 V |
| Logic Polarity | Non-Inverting | Non-Inverting | Inverting | Mixed (one each) | Non-Inverting | Non-Inverting |
| Turn-On Delay (ton) | 85 ns | 85 ns | 85 ns | 85 ns | 120 ns | 25 ns |
| Turn-Off Delay (toff) | 65 ns | 65 ns | 65 ns | 65 ns | 80 ns | 25 ns |
Key Differentiators
- Matched propagation delay between both channels (vs UCC27624DR)
- Higher sink current (3.3 A) than source current (2.3 A) - asymmetric drive optimized for MOSFET turn-off (vs IR4426PBF)
- Latch-immune proprietary CMOS technology for ruggedized monolithic construction (vs IRS2003SPBF)
- Wide 6-20 V VCC range compatible with both 12 V MOSFET and higher-voltage IGBT gate drive (vs UCC27624DR (4.5-26 V))
Design Notes
The IR4427PBF requires a local VCC decoupling capacitor of at least 0.1 Β΅F ceramic placed within 5 mm of pin 5 (VCC) and pin 6 (GND). For high-frequency switching loads (>200 kHz) or large gate-charge FETs (>50 nC Qg), add a 1-10 Β΅F bulk ceramic or tantalum in parallel. Gate drive currents in the multi-ampere range create nanosecond-scale voltage transients on VCC; inadequate bypassing causes logic-level glitches or latch-up. The IR4427's proprietary CMOS design is latch-immune, but VCC must remain within 6-20 V abs-max even during transients.
Place the IR4427PBF within 5-10 mm of the MOSFET/IGBT gate pin to minimize parasitic inductance in the gate-drive loop. Excessive loop inductance causes gate-voltage overshoot, ringing, and EMI. Use a 5-20 ohm gate resistor (placed close to the driver output, NOT at the MOSFET gate) to dampen ringing. For the PDIP-8 package, route VCC and GND on a wide copper pour; the DIP package's lead inductance (~5-10 nH) is larger than SOIC-8 but still acceptable for sub-500 kHz designs.
Do not connect the IR4427PBF output directly to a MOSFET gate without a series gate resistor - this prevents gate-source overvoltage from ringing and protects against accidental short-circuit. Do not operate above 20 V VCC - the abs-max is 20 V and transient spikes must be clamped. Do not use the IR4427 for high-side drive - it can only pull the gate to VCC referenced to GND; high-side drivers like IR2110SPBF or IR2304SPBF are required for floating high-side switches.
The DIP-8 package has thermal resistance theta_JA of approximately 100 C/W in still air. At 2 A continuous source current and 12 V VCC, the driver dissipates ~250 mW (mostly in the output stage), producing a 25 C junction rise - acceptable. At maximum pulsed current (3.3 A sink during switching transients), dissipation is negligible because pulse width is microseconds. For continuous DC operation near current limits, attach a small heatsink or increase PCB copper area around pins 5-8.
Keep the gate-drive loop area (driver VCC -> MOSFET gate -> MOSFET source -> GND -> driver GND) as small as physically possible to minimize parasitic inductance. For half-bridge topologies, use the IR2110 or IR2109 instead of two IR4427 ICs because the high-side bootstrap diode and level-shifting require a dedicated half-bridge driver. The IR4427's matched channel delay (within 5 ns typical) is critical when both channels switch simultaneously - verify timing with an oscilloscope on first prototype builds.
Compliance Information
Pb-free (PBF suffix) per Infineon part numbering convention. RoHS compliant. Not AEC-Q100 qualified - this is an industrial/consumer driver, not automotive grade.
