IRF7769L1TRPBF - 100V N-Channel HEXFET MOSFET | Infineon
MPN: IRF7769L1TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.09 | $3.09 |
| 10 | $2.78 | $27.80 |
| 100 | $2.34 | $234.00 |
| 500 | $1.98 | $990.00 |
| 1,000 | $1.72 | $1,720.00 |
Drop-in alternatives for IRF7769L1TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IRF7779L2TRPBF
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View Datasheet →IRF7779L1TRPBF
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IRF7780L1TRPBF
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IRFB4110PBF
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View Datasheet →IRF7769L1TRPBF Maximum Ratings & Electrical Characteristics
| Polarity | N-Channel |
| VDS (Drain-Source Voltage) | 100 V |
| VGS (Gate-Source Voltage) | ±20 V |
| Continuous Drain Current (TA=25C) | 20 A |
| Continuous Drain Current (TC=25C) | 124 A |
| Pulsed Drain Current | 142 A |
| Power Dissipation (TA=25C) | 3.3 W |
| Power Dissipation (TC=25C) | 125 W |
| RDS(on) max at VGS=10V | 3.5 mOhm |
| Total Gate Charge Qg | 200 nC |
| Technology | HEXFET (IR MOSFET) |
| Package | DirectFET Isometric L8 |
| Package Profile | 0.7 mm |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55C to +150C (TJ) |
| MSL Level | 1 |
| Lead-Free Reflow | 260C qualified |
| Halogen-Free | Yes |
| RoHS Compliance | Compliant |
IRF7769L1TRPBF Pin Configuration
| Pin 1 | DRAIN — Drain connection - large copper pad |
| Pin 2 | DRAIN — Drain connection - large copper pad |
| Pin 3 | DRAIN — Drain connection - large copper pad |
| Pin 4 | SOURCE — Source connection - large copper pad |
| Pin 5 | SOURCE — Source connection - large copper pad |
| Pin 6 | SOURCE-SENSE — Kelvin source sense connection |
| Pin 7 | GATE — Gate drive connection |
| Pin 8 | NC — Not connected (no-connect pad per DirectFET L8 land pattern) |
Safe Operating Area (DC)
Typical Applications
IRF7769L1TRPBF is suitable for 6 applications: Isolated DC-DC Converter Primary Switch, Synchronous Rectification in 48 V to Low-Voltage Converters, Hot-Swap and OR-ing Controllers in Telecom, High-Current Point-of-Load (POL) Converters, Motor Drive Half-Bridge and H-Bridge, Battery Protection and E-Fuse Circuits.
Isolated DC-DC Converter Primary Switch
The IRF7769L1TRPBF excels as the primary-side switch in isolated DC-DC converters for telecom 48 V bus systems. Its 100 V VDS rating provides substantial headroom above the 48 V nominal input plus transformer ringing transients, while the 3.5 mOhm RDS(on) minimizes conduction loss. The low 200 nC total gate charge enables efficient operation at switching frequencies from 200 kHz to 1 MHz, reducing transformer and output filter size. DirectFET L8 packaging delivers top-side cooling that complements the primary-side heat dissipation path. Place gate-drive resistors of 5-10 ohm close to the gate pad to suppress ringing, and use a kelvin-source connection to the DirectFET source-sensing pad to prevent Cdv/dt-induced turn-on at high dV/dt.
Recommended
Synchronous Rectification in 48 V to Low-Voltage Converters
On the secondary side of isolated 48 V to 5 V/12 V converters, the IRF7769L1TRPBF serves as a synchronous rectifier MOSFET, replacing Schottky diodes to reduce conduction loss. The 3.5 mOhm RDS(on) is critical here because the output current can exceed 50 A in modern POL converters. With low Qg of 200 nC, the part drives cleanly at 300-500 kHz without significant gate-drive loss. The 100 V rating handles reflected voltage spikes from the transformer primary. DirectFET L8's small footprint enables very high current density on the secondary-side PCB, and top-side cooling allows direct attachment to a heat-spreader copper plane.
Recommended
Hot-Swap and OR-ing Controllers in Telecom
The IRF7769L1TRPBF is ideal for -48 V telecom hot-swap and OR-ing FET applications where continuous current handling, low RDS(on), and high VDS rating are all required. The 100 V VDS comfortably exceeds the -75 V telecom transient specification, while 124 A continuous drain current supports high-power feed circuits. In OR-ing applications, the low RDS(on) minimizes voltage drop and power dissipation during parallel-redundant operation. DirectFET L8's compact footprint allows integration into high-density rectifier shelves. Gate drive should be controlled by a dedicated hot-swap controller IC with inrush current limiting and fault protection.
Recommended
High-Current Point-of-Load (POL) Converters
In high-current 12 V to 0.8-3.3 V POL converters for FPGAs, ASICs, and processors, the IRF7769L1TRPBF provides the low-side or high-side switch with minimal conduction loss. The 3.5 mOhm RDS(on) at 10 V VGS enables efficient step-down conversion at 50-100 A output currents without paralleling multiple FETs. The DirectFET L8 footprint is significantly smaller than D2PAK while achieving lower thermal resistance, allowing high power density on compact VRM boards. Above 30 A output, a multi-FET configuration with IRF7769L1 is recommended to spread heat across multiple DirectFET sites.
Recommended
Motor Drive Half-Bridge and H-Bridge
For 24-48 V brushless DC and permanent-magnet motor drives up to 100 A, the IRF7769L1TRPBF can be used in half-bridge and H-bridge configurations. The 100 V VDS rating provides safety margin against inductive voltage spikes during PWM switching, and the 124 A continuous rating supports motor peak currents. The low Qg of 200 nC enables PWM frequencies up to 50 kHz for low acoustic noise operation. DirectFET L8's small footprint allows compact motor-drive PCB layout. For three-phase motor inverters requiring six switches, the IRF7769L1's price/performance ratio is competitive against larger TO-220/TO-247 alternatives.
Recommended
Battery Protection and E-Fuse Circuits
The IRF7769L1TRPBF is suitable as the main disconnect switch in 48 V battery packs and industrial e-fuse applications. Its 100 V VDS provides margin against transients on 48 V Li-ion battery stacks, and the 3.5 mOhm RDS(on) minimizes voltage drop during high-current discharge. In fault conditions, the IRF7769L1 can interrupt currents up to 142 A pulsed. DirectFET L8's compact size allows integration into battery management unit (BMU) PCBs with high component density. A dedicated battery protection IC with overcurrent and short-circuit detection should drive the gate to ensure fast fault response.
Recommended
Recommended Products Summary
Engineering reference data for IRF7769L1TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7779L2TRPBF | IRF7779L1TRPBF | IRF7780L1TRPBF | IRFB4110PBF | IRFP2907PBF |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | DirectFET L8 | DirectFET L2 | DirectFET L8 | DirectFET L8 | TO-220AB | TO-247AC |
| VDS max | 100 V | 100 V | 100 V | 100 V | 100 V | 75 V |
| Continuous Drain Current (TC=25C) | 124 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 120 A | 209 A |
| RDS(on) max at VGS=10V | 3.5 mOhm | [DATA_NEEDED] | [DATA_NEEDED] | ~5 mOhm | ~4.5 mOhm | ~4.5 mOhm |
| Total Gate Charge Qg | 200 nC | Lower (high-freq optimized) | [DATA_NEEDED] | [DATA_NEEDED] | ~190 nC | ~380 nC |
| Power Dissipation (TC=25C) | 125 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | 195 W | 470 W |
| Mounting Type | Surface Mount (DirectFET) | Surface Mount (DirectFET) | Surface Mount (DirectFET) | Surface Mount (DirectFET) | Through-Hole (TO-220) | Through-Hole (TO-247) |
| Approximate Unit Price (qty 1) | $3.09 | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | $1.50-2.00 (DigiKey estimate) | $2.50-3.50 (DigiKey estimate) |
Key Differentiators
- Highest continuous current rating in DirectFET L8 footprint (vs IRF7780L1TRPBF)
- Lower profile and smaller footprint than TO-220 alternatives (vs IRFB4110PBF)
- Lower Qg than higher-current alternatives (vs IRFP2907PBF)
Design Notes
The DirectFET L8 package exposes the silicon die top-side for cooling, but most heat (60-70%) flows from drain pad through the PCB to internal copper planes. Design a thermal via array directly beneath the drain pad (typically 12-20 vias of 0.3 mm diameter) to a flooded inner-plane copper layer. Without this thermal via array, junction-to-ambient thermal resistance can rise 30-40%, derating the 125 W TC rating to roughly 75-80 W in practice. Estimated: based on standard DirectFET L8 land-pattern thermal design with 2 oz copper inner planes.
DirectFET L8 has six source pads and three drain pads plus a gate pad and kelvin-source pad. Route the gate-drive trace to the gate pad using a kelvin connection to the source-sense pad (pin 6 in our numbering) to decouple gate-drive current from the high-current source path. Place gate-drive resistors (5-10 ohm typical) within 5 mm of the gate pad to suppress ringing. Use a ground pour on the source pads and connect the kelvin source separately to the gate-driver ground return. This layout prevents Cdv/dt-induced turn-on at high dV/dt switching transients.
Do not exceed VGS of ±20 V absolute maximum. Use a 10-15 V Zener clamp on the gate to protect against gate-oxide rupture from switching transients. The DirectFET L8 package's exposed silicon die is sensitive to mechanical stress; avoid excessive mounting force and use the recommended stencil aperture (typically 0.2 mm thick, 1:1 pad-to-aperture ratio). For hand-rework, hot-air rework stations with top-side preheating at 150C are recommended to avoid thermal-shock die cracking.
The 200 nC Qg and fast switching edges of IRF7769L1 can generate significant EMI at switching frequencies above 500 kHz. Use a gate-drive resistor of 10-22 ohm to slow the switching edge to 20-50 ns rise/fall time, balancing EMI against switching loss. Place input snubber capacitors (0.1-1 uF ceramic) directly across drain-source within 5 mm of the device to suppress voltage ringing. For telecom applications, ensure the switching-loop area is minimized and routed away from signal traces.
Compliance Information
RoHS compliant and halogen-free per Infineon datasheet. Lead-free reflow qualified to 260C. MSL1 rating. Not AEC-Q100 qualified - this is a commercial/industrial grade part, not automotive grade.
