IRF7749L1TRPBF - 60V N-Channel HEXFET MOSFET DirectFET L8
MPN: IRF7749L1TRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.66 | $16.60 |
| 100 | $1.42 | $142.00 |
| 500 | $1.21 | $605.00 |
| 1,000 | $1.04 | $1,040.00 |
| 4,000 | $0.88 | $3,520.00 |
Drop-in alternatives for IRF7749L1TRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRF7799L1TRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRF7749L1TRPBF
✅ Drop-In✓ In Stock
$0.88 / Unit
View Datasheet →IRF7749L1TRPBF
✅ Drop-In✓ In Stock
$0.88 / Unit
View Datasheet →IRF7749L1TRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Number | IRF7749L1TRPBF |
| FET Type | N-Channel |
| Technology | HEXFET / IR MOSFET |
| Drain-to-Source Voltage (VDS) | 60 V |
| Continuous Drain Current (ID) at TA=25 C | 33 A |
| Pulsed Drain Current (IDM) at TC=25 C | 200 A |
| Gate-to-Source Voltage (VGS) max | 20 V |
| Gate Threshold Voltage (VGS(th)) | 2.9 V |
| Drain-Source On-Resistance RDS(on) max | 1.5 mOhm at VGS=10 V |
| Drain-Source On-Resistance RDS(on) typ | 1.1 mOhm at VGS=10 V |
| Total Gate Charge (Qg) | 200 nC max |
| Gate-Drain Charge (Qgd) typ | 71 nC |
| Power Dissipation (Ptot) at TC=25 C | 125 W |
| Power Dissipation (Ptot) at TA=25 C | 3.3 W |
| Operating Junction Temperature | -55 C to +175 C |
| Thermal Resistance Junction-to-Ambient (RthJA) | 45 K/W max |
| Package | DirectFET Isometric L8 |
| Mounting Type | Surface Mount |
| Moisture Sensitivity Level (MSL) | 1 (per JEDEC J-STD-020) |
| Polarity | N-Channel |
| Configuration | Single |
| Lead-Free / RoHS | Yes / Compliant |
IRF7749L1TRPBF Pin Configuration
| Pin 1 | Source — Source pad (large bottom pad) |
| Pin 2 | Gate — Gate drive input |
| Pin 3 | Drain — Drain pad (bottom) |
| Pin Top | Metal Can — Drain-connected top metal can for heatsinking (DirectFET L8 isometric) |
Safe Operating Area - IRF7749L1TRPBF (TC=25C)
Typical Applications
IRF7749L1TRPBF is suitable for 6 applications: Synchronous Rectification in 48V DC-DC Converters, High-Density VRM and POL Modules, OR-ing FET in Redundant Power Systems, Hot-Swap Controller Switch, Brushless DC Motor Drive Bridge, Battery Protection and Load Switch.
Synchronous Rectification in 48V DC-DC Converters
The IRF7749L1TRPBF's 1.1 mOhm typical RDS(on) at VGS=10 V and 60 V VDS rating make it ideal for synchronous-rectifier low-side FETs in 48 V to 12 V bus converters used in telecom and datacom systems. At 33 A continuous drain current the conduction loss is only approximately 1.2 W (estimated using I^2*RDS(on)), and the DirectFET L8 isometric package enables top-side cooling that SO-8 alternatives cannot match. The 200 nC total gate charge supports switching frequencies above 300 kHz, enabling high-density point-of-load designs where both footprint and thermal performance are critical.
Recommended
High-Density VRM and POL Modules
For Voltage Regulator Module (VRM) and Point-of-Load (POL) applications above 30 A per phase, the IRF7749L1TRPBF provides the low RDS(on) and DirectFET thermal performance needed to meet tight efficiency targets. The 45 K/W RthJA keeps junction temperature rise modest on standard 4-layer PCB copper, while the metal-can top of the L8 package accepts an optional heatsink for higher-phase-count designs. Per Infineon's application notes, this combination is widely used in server and datacenter VRM designs where efficiency at high current density is paramount.
Recommended
OR-ing FET in Redundant Power Systems
The IRF7749L1TRPBF can serve as an OR-ing MOSFET in N+1 redundant -48 V telecom power architectures, replacing Schottky diodes with active switching to reduce conduction loss from 0.5 V to just 33 mV at 30 A. The 60 V VDS provides adequate margin for -48 V nominal rails with transient spikes, and the 2.9 V gate threshold allows simple MOSFET-driver ICs to control reverse-current blocking. The DirectFET L8 isometric footprint supports the high continuous current and dissipation levels typical of always-on redundant paths in telecom infrastructure.
Recommended
Hot-Swap Controller Switch
In 48 V hot-swap and eFuse applications, the IRF7749L1TRPBF acts as the main series-pass element, controlling inrush current and providing circuit protection during board insertion. Its 1.5 mOhm max RDS(on) limits voltage drop under full load, and the 200 A pulsed rating tolerates transient inrush surges beyond continuous rating. The DirectFET L8 package dissipates the resulting I^2*R heat through top-side cooling, which is critical when the part sits inside a thermally-constrained chassis slot.
Recommended
Brushless DC Motor Drive Bridge
The IRF7749L1TRPBF suits BLDC motor drive half-bridge and three-phase inverter stages up to 60 V battery systems in e-bikes, drones, and battery-powered tools. Its 200 A pulsed current rating handles motor startup surges, while the 1.1 mOhm typical RDS(on) minimizes conduction loss during high-torque operation. The DirectFET L8 isometric footprint and 45 K/W RthJA support continuous motor current up to 30 A with adequate PCB copper area, while the 2.9 V gate threshold works with 5 V gate drivers commonly used in motor-control MCUs.
Recommended
Battery Protection and Load Switch
For battery-pack protection and high-side load switching in 24-48 V battery systems, the IRF7749L1TRPBF provides ultra-low RDS(on) for minimal voltage drop and high efficiency. The 60 V VDS rating tolerates transient voltage spikes during load dump, while the 200 nC gate charge supports PWM dimming or current-limit modulation at moderate switching frequencies. Its DirectFET L8 isometric package, MSL 1 rating, and lead-free reflow compatibility simplify high-volume manufacturing in Li-ion battery management designs.
Recommended
Recommended Products Summary
Engineering reference data for IRF7749L1TRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRF7799L1TRPBF |
|---|---|---|
| Brand | Infineon | Infineon |
| Package | DirectFET Isometric L8 | DirectFET Isometric L8 - same |
| Drain-to-Source Voltage (VDS) | 60 V | 75 V |
| Continuous Drain Current at TA=25 C | 33 A | 33 A |
| Pulsed Drain Current at TC=25 C | 200 A | 200 A |
| RDS(on) max at VGS=10 V | 1.5 mOhm | 1.8 mOhm |
| Gate Threshold (VGS(th)) | 2.9 V max | 2.9 V max |
| Total Gate Charge (Qg) | 200 nC max | 240 nC max |
| Thermal Resistance RthJA | 45 K/W | 45 K/W |
| Price (qty 1, USD, as of 2026-09-13) | 1.85 | 1.95 |
Key Differentiators
- Ultra-low 1.1 mOhm typical RDS(on) at VGS=10 V (vs IRF7799L1TRPBF (1.8 mOhm max at 75V VDS))
- Low 200 nC total gate charge for high-frequency switching (vs IRF7799L1TRPBF (240 nC typical Qg))
- DirectFET L8 isometric package with top-side cooling (vs Standard SO-8 MOSFETs in the same 60V/30A class)
Design Notes
Estimated: at 33 A continuous drain current and 1.1 mOhm typical RDS(on), the device dissipates roughly 1.2 W. With RthJA of 45 K/W, junction temperature rises ~54 C above ambient, keeping Tj below 150 C at 25 C ambient. Per Infineon's DirectFET application note, top-side heatsinking via the L8 metal can is required for continuous operation above ~2 W. Use thermal vias under the source pad and a copper heatsink clip for additional margin in high-current POL designs.
The DirectFET L8 isometric land pattern is Infineon-proprietary and MUST follow Infineon's reference footprint exactly. Use NSMD pads with solder mask defined on the source pad only, and add 8-12 thermal vias in 0.3 mm drill pattern under the source pad to spread heat into inner copper planes. Gate trace should be routed with minimal loop area to the gate-driver IC to avoid gate-oscillation and ringing; add a 10 ohm gate-source resistor to dampen the L-C resonance of the gate trace and the MOSFET's input capacitance.
Place the gate driver as close as possible to the gate pad to minimize parasitic inductance. Use a Kelvin-source connection where the gate driver's return path ties directly to the source pad rather than to a remote ground. For switching frequencies above 200 kHz, separate the power loop (drain-source) from the gate-driver loop and use a small RC snubber (e.g. 10 ohm + 1 nF) across drain-source if ringing exceeds 20% of VDS. Per Infineon's DirectFET design guide, this layout discipline is critical to achieving full bandwidth of the L8's switching performance.
Do not exceed 20 V on the gate pin, even transiently, as the gate oxide can be permanently damaged. Do not operate the MOSFET in linear mode at high current for extended periods - the SOA curve limits DC operation to roughly 125 W at low VDS. Verify that VGS stays above 6 V during full enhancement to achieve the published 1.5 mOhm max RDS(on); at VGS=4.5 V the on-resistance can rise 2-3x, dramatically increasing conduction loss. The DirectFET L8 metal can is electrically connected to the drain - do not allow it to touch other conductive surfaces.
Compliance Information
RoHS and REACH compliant per Infineon product page; lead-free per 'PBF' suffix. MSL 1 rating per JEDEC J-STD-020. Not AEC-Q100 qualified - choose automotive-grade HEXFET variants for vehicle applications.
