IRFH4253DTRPBF - 25V Dual N-Ch MOSFET, 1.45mΩ PQFN | Infineon
MPN: IRFH4253DTRPBF ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $2.11 | $2.11 |
| 10 | $1.92 | $19.20 |
| 100 | $1.62 | $162.00 |
| 500 | $1.38 | $690.00 |
| 1,000 | $1.18 | $1,180.00 |
| 3,000 | $1.02 | $3,060.00 |
IRFH4253DTRPBF Overview
A dual MOSFET (also called a half-bridge co-pack or asymmetric co-pack MOSFET) combines a high-side control FET and a low-side synchronous FET, or two synchronous FETs, in one thermally efficient PQFN. The co-pack approach shortens the high-current loop between the two FETs, reducing parasitic inductance, ringing, and switching losses versus two discrete MOSFETs - critical for high-frequency synchronous buck converters, point-of-load regulators, and OR-ing applications. The IRFH4253D targets point-of-load (POL) DC-DC conversion where small footprint, low Rdson, and integrated Schottky diode operation are required to maximize power density.
Key features of the IRFH4253D include low charge on the control FET for fast switching, very low Rdson on the synchronous FET for reduced conduction loss, an integrated Schottky diode with low forward voltage to suppress body-diode reverse-recovery losses, and the PQFN 5x6 package which provides a low thermal resistance path from junction to PCB. The device is RoHS compliant, lead-free, and qualified to MSL1 moisture sensitivity, simplifying board-level reliability and assembly. The 'TRPBF' suffix indicates tape-and-reel packaging with a lead-free, Pb-free finish.
Typical applications include synchronous buck converters in POL regulators, high-frequency DC-DC bricks, voltage regulator modules (VRMs), and OR-ing FETs for redundant power architectures. The dual-FET integration is especially useful in space-constrained telecom, server, and graphics card designs where two discrete SO-8 or smaller MOSFETs cannot match the combined Rdson, charge, and thermal performance of this co-pack.
When designing with this part, follow the layout recommendations in the manufacturer datasheet to keep the high-current loop minimal, use sufficient copper pour on the PQFN thermal pad, and respect the maximum junction temperature of 150 °C. Because the device integrates an asymmetric pair plus a Schottky, it cannot be used as a generic dual N-channel - one section is optimized for switching speed and the other for conduction.
Drop-in alternatives for IRFH4253DTRPBF — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IRFH4253DPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFH4255DTRPBF
✅ Drop-In📋 Reference alternative (not in catalog)
IRFH4257DTRPBF
✅ Drop-In ⚠️ 参数待验证📋 Reference alternative (not in catalog)
NTMFD4C25N
✅ Drop-In📋 Reference alternative (not in catalog)
SiC634CD
✅ Drop-In📋 Reference alternative (not in catalog)
IRFH4253DTRPBF Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies (formerly International Rectifier) |
| Part Status | Active |
| Transistor Type | Dual N-Channel (control + synchronous co-pack) |
| Drain-Source Voltage (Vdss) | 25 V |
| Continuous Drain Current (per section, 25°C) | 64 A |
| Pulsed Drain Current (per section) | 145 A |
| Rds(on) - Synchronous FET (max at Vgs=10V) | 1.45 mΩ |
| Gate Charge (Qg) - Control FET | 31 nC |
| Power Dissipation (per package) | 31 W to 50 W (PCB dependent) |
| Integrated Schottky Diode | Yes (low Vf) |
| Package / Case | PQFN 5x6 mm, Surface Mount |
| Mounting Type | Surface Mount |
| Operating Temperature Range | -55 °C to +150 °C (TJ max) |
| Moisture Sensitivity Level (MSL) | MSL1 |
| Lead Free Status / RoHS | Lead Free, RoHS Compliant |
| Packaging | Tape & Reel (TRPBF suffix) |
IRFH4253DTRPBF Pin Configuration
| Pin 1 | Source1 (Sync FET) — Source of synchronous MOSFET section |
| Pin 2 | Gate1 (Sync FET) — Gate of synchronous MOSFET section |
| Pin 3 | Drain1 / Drain2 (HS Node) — Common drain of both FETs (switching node) |
| Pin 4 | Drain1 / Drain2 (HS Node) — Common drain of both FETs (switching node) |
| Pin 5 | Gate2 (Ctrl FET) — Gate of control MOSFET section |
| Pin 6 | Source2 (Ctrl FET) — Source of control MOSFET section |
| Pin PAD | Thermal Pad (Drain) — Exposed thermal pad - connect to common drain for cooling |
Safe Operating Area (per MOSFET section)
Typical Applications
IRFH4253DTRPBF is suitable for 7 applications: Synchronous Buck Point-of-Load (POL) Converter, Voltage Regulator Module (VRM) for Servers, High-Frequency DC-DC Brick Converters, OR-ing FET for Redundant Power Architectures, Graphics Card and GPU Power Stages, Battery Charging and Power Tools, Hot-Swap and Active Current Limiting.
Synchronous Buck Point-of-Load (POL) Converter
The IRFH4253DTRPBF is purpose-built for synchronous buck POL converters operating from a 12 V bus. Its 25 V Vdss rating comfortably covers 12 V input plus switching transients, while the 1.45 mΩ synchronous Rds(on) minimizes conduction loss at 20-40 A output currents. The control FET's 31 nC Qg enables switching frequencies above 500 kHz without excessive gate-drive loss, and the integrated Schottky diode suppresses body-diode reverse recovery, eliminating the need for an external anti-parallel Schottky. Co-pack integration shrinks the high-current loop versus two discrete SO-8 MOSFETs, reducing ringing and improving efficiency in server, telecom, and graphics card POL designs.
Recommended
Voltage Regulator Module (VRM) for Servers
In server VRMs that step down 12 V to core voltages below 1.8 V at 40-60 A per phase, the IRFH4253DTRPBF offers a compact co-pack solution in PQFN 5x6. Its 64 A continuous drain current rating per section supports high-phase currents with proper PCB thermal design, and the package power dissipation of 31-50 W is achievable with adequate copper pours. The control FET gate charge of 31 nC balances switching speed and driver loss, while the low-Vf Schottky keeps dead-time losses minimal. Compared with two discrete DPAK MOSFETs, the IRFH4253D reduces parasitic loop inductance, which is critical at multi-MHz switching frequencies used in modern server VRMs.
Recommended
High-Frequency DC-DC Brick Converters
Distributed DC-DC brick converters (12 V to 3.3 V/1.8 V) in telecom and networking hardware benefit from the IRFH4253DTRPBF's low Rdson and low gate charge. At switching frequencies of 300-600 kHz, the 31 nC Qg keeps total gate-drive loss below 50 mW per phase, while the 1.45 mΩ synchronous Rds(on) maintains conduction efficiency above 95% at 30 A. The 25 V Vdss headroom handles ringing on the switching node in non-isolated buck topologies. The PQFN 5x6 package's exposed pad provides a direct thermal path to inner PCB copper layers, enabling reliable full-load operation in enclosed brick supplies.
Recommended
OR-ing FET for Redundant Power Architectures
In redundant -48 V or 12 V power systems, the IRFH4253DTRPBF can be deployed as an OR-ing FET when appropriately derated, taking advantage of its low Rds(on) to minimize voltage drop and conduction loss during parallel-operation of power supplies. The dual N-channel configuration allows a single co-pack to implement a back-to-back OR-ing stage, halving the PCB area versus two discrete MOSFETs. The integrated Schottky also supports fast turn-off during fault events. Designers should verify the system voltage does not exceed 25 V under worst-case transient conditions; for true -48 V telecom rails, a higher-voltage Infineon part is required.
Recommended
Graphics Card and GPU Power Stages
Graphics card power stages require high current density and very low conduction loss in a compact PCB footprint - both delivered by the IRFH4253DTRPBF in its PQFN 5x6 outline. The 64 A continuous current per section supports peak GPU loads, while the 1.45 mΩ Rdson keeps copper losses below 1 W at typical operating points. The integrated Schottky eliminates the external Schottky diode often required with discrete dual MOSFETs, simplifying BOM and assembly. Co-pack integration also reduces the high-current switching loop, which is critical in GPU power designs where EMI compliance and switching transients are tightly constrained.
Recommended
Battery Charging and Power Tools
High-current lithium-ion battery chargers and cordless power tools operating from multi-cell battery packs can use the IRFH4253DTRPBF in synchronous buck or bidirectional buck-boost topologies. The 25 V Vdss comfortably covers 5-10S Li-ion battery voltages, and the 64 A continuous current rating supports fast-charge currents above 30 A. The low Rdson reduces thermal stress during high-current discharge cycles, improving run time and reliability. The integrated Schottky diode improves light-load efficiency when the battery is nearly full, while the PQFN 5x6 footprint suits the compact form factors typical of power tools and portable charging stations.
Recommended
Hot-Swap and Active Current Limiting
In 12 V hot-swap controllers for plug-in cards and disk arrays, the IRFH4253DTRPBF can serve as the main pass MOSFET or current-limiting element when appropriately heatsunk. The low Rds(on) reduces voltage drop and I²R loss during steady-state operation, while the high pulsed current rating of 145 A absorbs inrush transients at card insertion. The dual-channel configuration also enables a back-to-back blocking topology for true bidirectional isolation. Designers should add a gate-source resistor network to control inrush dV/dt and protect the gate oxide, and confirm the system voltage stays below the 25 V Vdss rating under all transients.
Recommended
Recommended Products Summary
Engineering reference data for IRFH4253DTRPBF — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IRFH4253DPBF | IRFH4255DTRPBF | IRFH4257DTRPBF | NTMFD4C25N | SiC634CD |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | onsemi | Vishay Intertechnology |
| Package | PQFN 5x6 mm | PQFN 5x6 mm - same | PQFN 5x6 mm - same | PQFN 5x6 mm - same | PQFN 5x6 mm - same | PQFN 5x6 mm - same |
| Drain-Source Voltage (Vdss) | 25 V | 25 V | 25 V | 25 V | 25 V | 25 V |
| Rds(on) - Synchronous FET (max @ Vgs=10V) | 1.45 mΩ | 1.45 mΩ | ~2.0 mΩ | ~2.5 mΩ | ~2.5 mΩ | ~3.0 mΩ |
| Integrated Schottky Diode | Yes | Yes | Yes | Yes | No | Yes |
| RoHS / Lead Free | Yes | Yes | Yes | Yes | Yes | Yes |
Key Differentiators
- Lowest Rdson in Infineon PQFN 5x6 dual-N family (vs IRFH4255DTRPBF)
- Integrated low-Vf Schottky diode (vs NTMFD4C25N (onsemi))
- Tape-and-reel Pb-free packaging (vs IRFH4253DPBF (tube))
Design Notes
Estimated: at continuous 64 A per section and 1.45 mΩ Rds(on), the synchronous FET dissipates roughly 64^2 x 0.00145 = ~5.9 W. Combined with the control FET switching loss at 500 kHz, total package dissipation can reach 7-10 W, requiring at least 1 square inch of inner-layer copper tied to the PQFN thermal pad. Without this copper, junction temperature will exceed 150 °C and trigger thermal shutdown or failure.
Route the high-current switching loop (Drain1/Drain2 - Source1 - GND - Source2) on the top layer using wide, short traces or filled copper pours. Keep the gate drive traces short and away from the switching node to minimize parasitic inductance. Use at least 4 thermal vias (0.3 mm drill, 1 mm pitch) under the exposed pad to provide a low-thermal-impedance path to inner copper planes.
Do not exceed the 25 V Vdss rating under any transient condition - the switching-node spike in a 12 V buck typically reaches 18-22 V, leaving little headroom. Add an RC snubber (1-4.7 ohm + 1-10 nF) if ringing exceeds 24 V. Also verify the gate drive voltage stays within the maximum Vgs rating (commonly ±20 V for Infineon N-channel MOSFETs); over-voltage on the gate will puncture the thin gate oxide.
Compliance Information
RoHS compliant and Pb-free per Infineon product page (TRPBF suffix). MSL1 moisture sensitivity simplifies assembly. Not AEC-Q100 qualified - select an automotive-grade Infineon OptiMOS variant for vehicle applications.
