SPP11N80C3XKSA1 - 800V 11A CoolMOS C3 N-Channel MOSFET | Infineon
MPN: SPP11N80C3XKSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.85 | $3.85 |
| 10 | $3.55 | $35.50 |
| 100 | $2.98 | $298.00 |
| 500 | $2.45 | $1,225.00 |
| 1,000 | $2.1 | $2,100.00 |
SPP11N80C3XKSA1 Overview
A power MOSFET is a voltage-controlled three-terminal semiconductor switch (gate, drain, source) that converts DC or pulsed drive into a low-resistance conduction path between drain and source. The 800 V drain-source breakdown (V(BR)DSS) places this device in the high-voltage MOSFET class used in offline SMPS front ends, while the 11 A continuous rating places it in the mid-power segment, suitable for PFC stages, primary-side switches in flyback/forward converters, and industrial welding and motor-drive inverters. Hypernyms: power MOSFET -> MOSFET -> discrete semiconductor -> power semiconductor -> semiconductor. Synonyms: N-FET, N-channel enhancement-mode MOSFET, superjunction MOSFET, CoolMOS.
Key features include 800 V drain-source breakdown (V(BR)DSS), 11 A continuous drain current at case temperature (ID @ Tc), 156 W maximum power dissipation (Ptot @ Tc), ultra-low gate charge (Qg) for reduced driver loss, ultra-low effective output capacitance (Coss(eff)) for higher switching frequency, high peak current capability for inductive loads, and extreme dv/dt rating for hard-switched topologies. The PG-TO220-3-1 package provides a low thermal-resistance path through the central mounting tab.
Technically, CoolMOS C3 uses a vertical superjunction (SJ) structure that breaks the silicon area-resistance tradeoff of planar MOSFETs. The result is an order-of-magnitude lower specific on-resistance (RDS(on) x area) at the same voltage class. The trade-off is a non-linear Coss that decreases with VDS, which benefits zero-voltage-switching (ZVS) topologies like LLC and PFC boost. Pb-free lead plating and RoHS compliance support modern manufacturing directives, and JEDEC qualification assures reliability under industrial thermal and humidity stress.
Typical applications include switch-mode power supplies (SMPS) for industrial 380-400 V AC-DC front ends, power factor correction (PFC) boost stages, telecom rectifier modules, solar inverter primary switches, induction-heating resonant half-bridges, and welding inverter power stages. The wide safety margin of an 800 V rating on a 230/400 V AC mains-rectified bus (peak ~565 V) gives designers additional headroom for surge and ring transients.
When designing with this device, observe avalanche energy (EAS) limits during inductive turn-off, and add a low-impedance gate-drive loop to control dv/dt. For hard-switched topologies above 50 kHz, plan thermal dissipation carefully - the 156 W rating assumes a 25 C case temperature, and real PCB heatsinking typically derates this to 60-80 W.
This page synthesizes distributor pricing, drop-in CoolMOS C3 alternatives, and practical design notes not found in the manufacturer datasheet alone.
Drop-in alternatives for SPP11N80C3XKSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
IPP11N80C3XKSA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
SPW11N80C3XKSA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
SPP11N60C3XKSA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
SPP11N65C3XKSA1
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
IPP65R600C7XKSA1
β Drop-Inπ Reference alternative (not in catalog)
SPP11N80C3XKSA1 Maximum Ratings & Electrical Characteristics
| Technology | CoolMOS C3 (superjunction N-Channel MOSFET) |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 800 V |
| Continuous Drain Current (ID @ Tc) | 11 A |
| Maximum Power Dissipation (Ptot @ Tc) | 156 W |
| Gate Charge (Qg, typ) | Ultra-low (CoolMOS C3 characteristic) |
| Effective Output Capacitance (Coss(eff)) | Ultra-low (CoolMOS C3 characteristic) |
| dv/dt Ruggedness | Extreme (JEDEC-qualified) |
| Operating Temperature Range | -55 C to +150 C (junction) |
| Package | PG-TO220-3-1 (through-hole, 3 leads + tab) |
| Mounting Type | Through Hole (THT) |
| Lead Plating | Pb-free (RoHS compliant) |
| Qualification | JEDEC |
| Peak Current Capability | High |
SPP11N80C3XKSA1 Pin Configuration
| Pin 1 | Gate β Gate drive input; requires 10-15 V Vgs for full enhancement |
| Pin 2 | Drain β Drain terminal (high-voltage switching node) |
| Pin 3 | Source β Source terminal (reference for gate drive and current return) |
| Pin TAB | Drain (tab) β Electrically connected to pin 2 (Drain); used for heatsink mounting |
Safe Operating Area (SOA)
Typical Applications
SPP11N80C3XKSA1 is suitable for 6 applications: Switch-Mode Power Supply (SMPS) Primary Switch, Power Factor Correction (PFC) Boost Stage, Industrial Welding Inverter, Telecom Rectifier Module, Solar String Inverter Primary Switch, Induction Heating Resonant Inverter.
Switch-Mode Power Supply (SMPS) Primary Switch
The SPP11N80C3XKSA1 is used as the primary-side switch in 230/400 V AC-input isolated SMPS topologies such as flyback, forward, half-bridge, and full-bridge converters. Its 800 V V(BR)DSS provides >40% safety margin above the rectified 400 V DC bus peak (~565 V), handling voltage spikes from transformer leakage inductance. The CoolMOS C3 ultra-low gate charge (Qg) reduces driver losses at 65-100 kHz switching, and ultra-low effective Coss cuts turn-off loss in hard-switched topologies. Placed between the rectified DC bus and the primary winding, with a gate driver providing 10-15 V Vgs, the part delivers 100-300 W output power with 90%+ efficiency. Compared to planar 800 V MOSFETs, the C3 silicon enables 30-50% lower switching loss and smaller magnetics.
Recommended
Power Factor Correction (PFC) Boost Stage
In PFC boost converters targeting 80 PLUS and ENERGY STAR efficiency, the SPP11N80C3XKSA1 acts as the boost switch between the bridge rectifier and the 400 V DC bulk capacitor. Its 800 V rating tolerates line surges and inductor ring transients, while ultra-low Coss(eff) reduces switching loss at 65 kHz CCM operation. The 11 A continuous rating supports 1-2 kW PFC stages with adequate heatsinking. Per the Infineon SPP11N80C3 datasheet, 'Power Factor Correction (PFC)' is an explicit target application. The 156 W power dissipation envelope allows sustained CCM operation with a 25-40 C/W heatsink. Compared to planar 600 V MOSFETs in the same position, the C3 gives 2-3x lower switching loss, enabling compliance with 80 PLUS Platinum at lower BOM cost.
Recommended
Industrial Welding Inverter
In IGBT/MOSFET welding inverter topologies, the SPP11N80C3XKSA1 serves as the primary switch in resonant or hard-switched bridge legs operating from rectified 3-phase 380-400 V mains. Its 11 A continuous rating with 156 W dissipation supports 5-10 kVA welding output stages, and the high peak current capability handles the short-circuit transients characteristic of stick welding arcs. The extreme dv/dt rating protects against bridge-induced voltage spikes across the primary winding. CoolMOS C3 ultra-low Qg allows the gate driver to operate at 20-50 kHz with minimal driver loss, while ultra-low Coss reduces turn-off loss during resonant transitions. Per the Infineon SPP11N80C3 datasheet, 'Industrial application with high DC bulk voltage' is a target use case. The PG-TO220-3-1 package mounts directly to a chassis heatsink for ground-return cooling.
Recommended
Telecom Rectifier Module
In -48 V telecom rectifier modules operating from 230 V AC mains, the SPP11N80C3XKSA1 forms the primary switch in a PFC + LLC two-stage architecture targeting 1-3 kW per module. Its 800 V rating with 800 V surge margin handles ringing from the LLC resonant tank, and the ultra-low Coss reduces circulating current loss in the resonant stage. The 11 A continuous rating supports typical 1.5-2 kW per-module power levels. Per the Infineon SPP11N80C3 datasheet, target applications include 'industrial application with high DC bulk voltage', which encompasses telecom rectifiers. JEDEC qualification and Pb-free plating meet NEBS / ETSI telecom reliability requirements. Compared to older planar MOSFETs, the C3 enables 1-2% efficiency improvement, directly translating to lower operating cost in always-on telecom infrastructure.
Recommended
Solar String Inverter Primary Switch
In single-phase solar string inverters with 600-1000 V DC input, the SPP11N80C3XKSA1 acts as the primary-side boost or full-bridge switch in transformer-isolated topologies. Its 800 V rating handles the maximum power point (MPP) voltage range of typical residential solar panels with margin for grid-side transients. The 11 A rating supports 3-5 kW inverter power levels common in European residential installations. Per the Infineon SPP11N80C3 datasheet, target applications include solar inverters where high switching frequency enables smaller high-frequency transformers. Pb-free plating and RoHS compliance support EU WEEE directives on renewable energy equipment. Compared to 1200 V MOSFETs, the 800 V C3 part is more cost-effective for 600 V DC bus designs while maintaining the reliability required for 25-year solar inverter service life.
Recommended
Induction Heating Resonant Inverter
In resonant induction-heating cooktops and industrial induction heaters, the SPP11N80C3XKSA1 operates as the switch in a series-resonant half-bridge or full-bridge inverter, typically at 20-100 kHz. Its 800 V V(BR)DSS handles the DC bus voltage of rectified 230 V mains, and ultra-low Coss(eff) is critical because Coss is part of the resonant tank capacitance - lower Coss means higher Q, faster heating, and lower circulating current. The extreme dv/dt rating tolerates the high di/dt and dv/dt of resonant transitions. Per the Infineon SPP11N80C3 datasheet, target applications include 'industrial application with high DC bulk voltage', which covers induction heating. The 11 A continuous rating supports 1-2 kW per resonant leg with proper heatsinking, and Pb-free plating meets modern kitchen appliance regulations.
Recommended
Recommended Products Summary
Engineering reference data for SPP11N80C3XKSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IPP11N80C3XKSA1 | SPW11N80C3XKSA1 | SPP11N60C3XKSA1 | IPP65R600C7XKSA1 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TO220-3-1 | PG-TO220-3-1 - same | PG-TO247-3 - larger | PG-TO220-3-1 - same | PG-TO220-3-1 - same |
| Drain-Source Breakdown Voltage (V(BR)DSS) | 800 V | 800 V | 800 V | 600 V (-25%) | 700 V (-12.5%) |
| CoolMOS Generation | C3 | C3 - same | C3 - same | C3 - same | C7 (newer, lower RDS(on)) |
| Gate Charge (Qg) | Ultra-low (CoolMOS C3) | Ultra-low (same die) | Ultra-low (same die) | Ultra-low (same family) | Lower (C7 generation) |
| RoHS Compliance | Yes (Pb-free) | Yes | Yes | Yes | Yes |
Key Differentiators
- CoolMOS C3 superjunction silicon delivers 5-10x lower switching loss than planar 800V MOSFETs (vs Generic 800V planar MOSFET)
- Extreme dv/dt rating per JEDEC (vs Non-JEDEC-qualified competitors)
- Pb-free lead plating and RoHS compliance (vs Legacy SnPb-plated high-Voltage MOSFETs)
Design Notes
The 156 W power dissipation rating assumes Tc=25 C with infinite heatsink, which is not realizable in field designs. Estimated: with a typical TO-220 mounted on a 30x30x15 mm aluminum heatsink in still air, junction-to-ambient thermal resistance is approximately 40-50 C/W, derating Ptot to roughly 60-80 W. Always compute Tj_max = Pd x RthJA + Tamb and verify it stays below 150 C under worst-case conduction + switching losses. For SPP11N80C3XKSA1 used as a 100 kHz SMPS primary switch, switching losses typically dominate (Qg x Vdrive x fsw + 0.5 x VDS x Coss x VDS x fsw), so plan thermal budgets accordingly. If design requires >100 W dissipation, choose SPW11N80C3XKSA1 (TO-247, lower Rth) instead.
Place the gate drive loop as physically small as possible - the source pin (pin 3) is the Kelvin reference for the gate, so the gate-driver ground must connect to pin 3 directly, NOT to the power-source PCB trace. A poor gate loop layout induces source-lead inductance that fights Vgs during switching, slowing edges and causing ringing that can exceed Vgs(max) +/-20 V. Estimated: keep gate-loop area under 1 cmΒ²; use a 4-layer PCB with a dedicated gate-drive ground pour. For hard-switched 800 V applications, add a 10-22 ohm gate-source resistor close to the IC to prevent dv/dt-induced turn-on.
Three pitfalls to avoid: (1) Exceeding avalanche energy (EAS) during inductive turn-off - the CoolMOS C3 has finite EAS, so add a snubber or TVS clamp across the primary winding. (2) Operating above maximum case temperature (150 C) due to inadequate heatsinking. (3) Driving Vgs above +/-20 V absolute maximum - use a 12-15 V Vgs clamp (e.g., 15 V Zener from gate to source) to prevent gate-oxide rupture from ringing. The CoolMOS C3 datasheet explicitly notes 'extreme dv/dt rated' but this means the device survives high dv/dt, not that you can exceed Vgs(max) during transients.
Compliance Information
Pb-free lead plating per Infineon datasheet; RoHS compliant; JEDEC qualified for industrial target applications; not AEC-Q100 (automotive grade would be in IPP/IAU series).
