H5AN8G8NDJR - 8Gb DDR4 SDRAM 3200MT/s | SK hynix
N.º da peça: H5AN8G8NDJR ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $31.28 | $31,28 |
| 10 | $29.5 | $295,00 |
| 100 | $27.8 | $2.780,00 |
| 500 | $26.1 | $13.050,00 |
| 1.000 | $24.5 | $24.500,00 |
H5AN8G8NDJR Visão geral
DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock, doubling the data rate of DDR3. It operates at lower voltages (1.2V vs 1.5V) and offers higher density and speed, making it the standard for modern computing. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in PCs, servers, and embedded systems.
The H5AN8G8NDJR features a 1G x 8 organization, providing 8Gb of memory in a single chip. It supports data rates up to 3200MT/s, with a CAS latency of 22 (typical) and a tRCD/tRP of 22ns. The device includes on-die ECC (optional) and supports a burst length of 8 and 4 with burst chop. It also features a programmable read latency (RL) and write latency (WL) for system optimization. The FBGA-78 package offers a compact footprint with a 7.5x11mm body, suitable for space-constrained designs.
Technically, the H5AN8G8NDJR uses a 20nm-class process technology, enabling high density and low power consumption. It supports a 1.2V supply with a tolerance of ±5%, and includes a VPP supply of 2.5V for wordline boost. The device has a self-refresh current of approximately 30mA (typical) and an active standby current of 60mA. It also features a temperature-compensated self-refresh (TCSR) to reduce power at lower temperatures. The device is RoHS compliant and lead-free.
Typical applications include desktop and laptop PCs, servers, networking equipment, and embedded systems. The high bandwidth and low power make it ideal for memory-intensive tasks such as gaming, data analytics, and virtualization. In embedded systems, it provides reliable performance for industrial control and edge computing.
When designing with this device, ensure proper decoupling capacitors (0.1uF and 10uF) are placed near the VDD and VDDQ pins. Follow the layout guidelines in the datasheet for signal integrity, especially for the high-speed data and address lines. The ZQ pin requires a 240-ohm resistor to ground for calibration.
Alternativas drop-in para H5AN8G8NDJR — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com H5AN8G8NDJR (mesmo formato e footprint) — diferindo em Package, Data Rate, Operating Temperature, Refresh, Organization.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
H5AN8G8NCJR-XNC
✅ Drop-In✓ Em estoque
$30.6923 / unidade
Ver ficha técnica →H5AN8G6NDJR-XNC
✅ Drop-In✓ Em estoque
$55.6818 / unidade
Ver ficha técnica →H5AN8G6NCJR-VKC
✅ Drop-In✓ Em estoque
$60 / unidade
Ver ficha técnica →MT40A1G8SA-062E
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$6.05 / unidade
Ver ficha técnica →K4A8G085WB-BIWE
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$6.5 / unidade
Ver ficha técnica →AS4C512M16D4A-62BCN
✅ Drop-In ⚠️ Especificações não verificadas✓ Em estoque
$7.2 / unidade
Ver ficha técnica →H5AN8G8NDJR Classificações máximas e características elétricas
| Tipo de memória | DDR4 SDRAM |
| Density | 8 Gb |
| Organização da memória | 1G x 8 |
| Taxa de dados | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) |
| VDDQ | 1.2 V |
| VPP | 2.5 V |
| Temperatura de operação | 0°C to +95°C (Tc) |
| Encapsulamento | FBGA-78 (7.5x11 mm) |
| Latência CAS | 22 (typical) |
| tRCD | 22 ns |
| tRP | 22 ns |
| Burst Length | 8 and 4 (with burst chop) |
| Self-Refresh Current | 30 mA (typical) |
| Active Standby Current | 60 mA (typical) |
| RoHS | Compliant |
| Lead-Free | Yes |
Configuração de pinos do H5AN8G8NDJR
| Pino A1 | VDD — Power supply |
| Pino A2 | DQ0 — Data input/output 0 |
| Pino A3 | DQ1 — Data input/output 1 |
| Pino A4 | VSS — Ground |
| Pino A5 | DQ2 — Data input/output 2 |
| Pino A6 | DQ3 — Data input/output 3 |
| Pino A7 | VDDQ — DQ power supply |
| Pino A8 | DQ4 — Data input/output 4 |
| Pino A9 | DQ5 — Data input/output 5 |
| Pino A10 | VSS — Ground |
| Pino A11 | DQ6 — Data input/output 6 |
| Pino A12 | DQ7 — Data input/output 7 |
| Pino B1 | VSS — Ground |
| Pino B2 | DQS0_t — Data strobe 0 (true) |
| Pino B3 | DQS0_c — Data strobe 0 (complement) |
| Pino B4 | VDD — Power supply |
| Pino B5 | DM0_n — Data mask 0 (active low) |
| Pino B6 | VSS — Ground |
| Pino B7 | VDDQ — DQ power supply |
| Pino B8 | DQS1_t — Data strobe 1 (true) |
| Pino B9 | DQS1_c — Data strobe 1 (complement) |
| Pino B10 | VDD — Power supply |
| Pino B11 | DM1_n — Data mask 1 (active low) |
| Pino B12 | VSS — Ground |
| Pino C1 | VDDQ — DQ power supply |
| Pino C2 | VSS — Ground |
| Pino C3 | VDDQ — DQ power supply |
| Pino C4 | VSS — Ground |
| Pino C5 | VDDQ — DQ power supply |
| Pino C6 | VSS — Ground |
| Pino C7 | VDDQ — DQ power supply |
| Pino C8 | VSS — Ground |
| Pino C9 | VDDQ — DQ power supply |
| Pino C10 | VSS — Ground |
| Pino C11 | VDDQ — DQ power supply |
| Pino C12 | VSS — Ground |
| Pino D1 | A0 — Address input 0 |
| Pino D2 | A1 — Address input 1 |
| Pino D3 | A2 — Address input 2 |
| Pino D4 | A3 — Address input 3 |
| Pino D5 | A4 — Address input 4 |
| Pino D6 | A5 — Address input 5 |
| Pino D7 | A6 — Address input 6 |
| Pino D8 | A7 — Address input 7 |
| Pino D9 | A8 — Address input 8 |
| Pino D10 | A9 — Address input 9 |
| Pino D11 | A10/AP — Address input 10 / Auto precharge |
| Pino D12 | A11 — Address input 11 |
| Pino E1 | A12/BC — Address input 12 / Burst chop |
| Pino E2 | A13 — Address input 13 |
| Pino E3 | A14 — Address input 14 |
| Pino E4 | A15 — Address input 15 |
| Pino E5 | A16 — Address input 16 |
| Pino E6 | A17 — Address input 17 |
| Pino E7 | BA0 — Bank address 0 |
| Pino E8 | BA1 — Bank address 1 |
| Pino E9 | BA2 — Bank address 2 |
| Pino E10 | BG0 — Bank group 0 |
| Pino E11 | BG1 — Bank group 1 |
| Pino E12 | VDD — Power supply |
| Pino F1 | VSS — Ground |
| Pino F2 | CK_t — Clock (true) |
| Pino F3 | CK_c — Clock (complement) |
| Pino F4 | CKE — Clock enable |
| Pino F5 | CS_n — Chip select (active low) |
| Pino F6 | ODT — On-die termination |
| Pino F7 | RAS_n — Row address strobe (active low) |
| Pino F8 | CAS_n — Column address strobe (active low) |
| Pino F9 | WE_n — Write enable (active low) |
| Pino F10 | RESET_n — Reset (active low) |
| Pino F11 | VDD — Power supply |
| Pino F12 | VSS — Ground |
| Pino G1 | VDD — Power supply |
| Pino G2 | VSS — Ground |
| Pino G3 | VDD — Power supply |
| Pino G4 | VSS — Ground |
| Pino G5 | VDD — Power supply |
| Pino G6 | VSS — Ground |
| Pino G7 | VDD — Power supply |
| Pino G8 | VSS — Ground |
| Pino G9 | VDD — Power supply |
| Pino G10 | VSS — Ground |
| Pino G11 | VDD — Power supply |
| Pino G12 | VSS — Ground |
| Pino H1 | ZQ — Calibration reference |
| Pino H2 | VPP — Wordline boost supply |
| Pino H3 | VSS — Ground |
| Pino H4 | VDD — Power supply |
| Pino H5 | VSS — Ground |
| Pino H6 | VDD — Power supply |
| Pino H7 | VSS — Ground |
| Pino H8 | VDD — Power supply |
| Pino H9 | VSS — Ground |
| Pino H10 | VDD — Power supply |
| Pino H11 | VSS — Ground |
| Pino H12 | VDD — Power supply |
Aplicações típicas
H5AN8G8NDJR é adequado para 6 aplicaçãos: Desktop and Laptop PCs, Servers and Data Centers, Networking Equipment, Embedded Systems, Gaming Consoles, Artificial Intelligence and Machine Learning.
Desktop and Laptop PCs
The H5AN8G8NDJR provides 8Gb of high-speed DDR4 memory for mainstream computing. Its 3200MT/s data rate and 1.2V operation deliver responsive performance for multitasking, gaming, and productivity. The x8 organization supports ECC in some platforms, enhancing reliability. In a dual-channel configuration, two devices provide 16GB of memory, balancing cost and performance. The FBGA-78 package allows compact module designs, fitting standard DIMM and SO-DIMM form factors.
Recomendado
Servers and Data Centers
In servers, the H5AN8G8NDJR's 8Gb density and x8 organization enable high-capacity RDIMMs and LRDIMMs with ECC. The 3200MT/s speed supports memory-intensive workloads like virtualization and databases. The device's low 1.2V operation reduces power consumption in large memory arrays. Its robust features, including CRC and write leveling, ensure signal integrity at high speeds. The 0-95°C operating range suits data center environments. Multiple devices can be combined to create 64GB or larger modules, maximizing server memory capacity.
Recomendado
Networking Equipment
The H5AN8G8NDJR is used in routers, switches, and network appliances for packet buffering and forwarding tables. Its high bandwidth (3200MT/s) handles high-throughput traffic, while the 8Gb density provides ample storage for routing tables. The low power consumption is critical for fanless designs. The device's auto self-refresh and ZQ calibration maintain data integrity in varying thermal conditions. The FBGA-78 package fits compact line cards. Its reliability makes it suitable for 24/7 operation in enterprise networking.
Recomendado
Embedded Systems
For embedded applications like industrial PCs and edge computing, the H5AN8G8NDJR offers a balance of performance and power. Its 8Gb capacity supports complex applications, while the 1.2V supply reduces heat in sealed enclosures. The device's wide temperature range (0-95°C) covers most industrial environments. The x8 organization simplifies PCB routing compared to x16. The FBGA-78 package is suitable for small form factors. Its long-term availability makes it ideal for embedded designs with extended lifecycles.
Recomendado
Gaming Consoles
The H5AN8G8NDJR delivers the high bandwidth needed for gaming consoles, supporting 4K textures and fast loading. Its 3200MT/s data rate and 8Gb density allow 16GB configurations with two devices. The low latency (CL22) reduces input lag. The device's power efficiency helps manage thermal budgets in compact consoles. The x8 organization is standard in gaming memory modules. Its reliability ensures stable performance during extended gaming sessions. The FBGA-78 package enables slim console designs.
Recomendado
Artificial Intelligence and Machine Learning
In AI/ML inference systems, the H5AN8G8NDJR provides high-bandwidth memory for model weights and intermediate data. Its 3200MT/s speed accelerates matrix operations, while the 8Gb density supports large models. The low power consumption is crucial for edge AI devices. The device's features like CRC ensure data integrity during intensive computations. The x8 organization allows efficient memory interleaving. It is used in AI accelerators and smart cameras. The FBGA-78 package fits compact AI modules.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para H5AN8G8NDJR — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | H5AN8G8NCJR-XNC | H5AN8G6NDJR-XNC | MT40A1G8SA-062E | K4A8G085WB-BIWE |
|---|---|---|---|---|---|
| Package | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) |
| Brand | SK hynix | SK hynix | SK hynix | Micron Technology | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 16 | 1G x 8 | 1G x 8 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| CAS Latency | 22 | 22 | 22 | 22 | 22 |
Principais diferenciais
- x8 organization for ECC support (vs H5AN8G6NDJR-XNC)
- High density 8Gb in a single package (vs AS4C512M16D4A-62BCN)
- Proven SK hynix quality (vs K4A8G085WB-BIWE)
Notas de projeto
Place 0.1uF and 10uF decoupling capacitors close to the VDD and VDDQ pins. Use a 240-ohm resistor on the ZQ pin for calibration. Ensure the VPP supply is clean and within 2.5V ±5%.
For 3200MT/s operation, maintain controlled impedance of 40-50 ohms for DQ/DQS lines and 50-60 ohms for address/control lines. Keep trace lengths matched within ±5mm. Use ground planes to minimize crosstalk.
The device operates up to 95°C Tc. Ensure adequate airflow or heatsinking in high-density modules. Monitor the case temperature and derate if necessary. The self-refresh current is 30mA typical, so power dissipation is low, but in arrays, heat can accumulate.
Informações de conformidade
RoHS compliant per LCSC and datasheet. Not AEC-Q100 qualified as it is a memory IC for general computing.
