H5AN8G8NDJR - 8Gb DDR4 SDRAM 3200MT/s | SK hynix
Référence : H5AN8G8NDJR ✓ Actif| Qté | Prix unitaire | Total |
|---|---|---|
| 1 | $31.28 | $31,28 |
| 10 | $29.5 | $295,00 |
| 100 | $27.8 | $2 780,00 |
| 500 | $26.1 | $13 050,00 |
| 1 000 | $24.5 | $24 500,00 |
H5AN8G8NDJR Présentation
DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock, doubling the data rate of DDR3. It operates at lower voltages (1.2V vs 1.5V) and offers higher density and speed, making it the standard for modern computing. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in PCs, servers, and embedded systems.
The H5AN8G8NDJR features a 1G x 8 organization, providing 8Gb of memory in a single chip. It supports data rates up to 3200MT/s, with a CAS latency of 22 (typical) and a tRCD/tRP of 22ns. The device includes on-die ECC (optional) and supports a burst length of 8 and 4 with burst chop. It also features a programmable read latency (RL) and write latency (WL) for system optimization. The FBGA-78 package offers a compact footprint with a 7.5x11mm body, suitable for space-constrained designs.
Technically, the H5AN8G8NDJR uses a 20nm-class process technology, enabling high density and low power consumption. It supports a 1.2V supply with a tolerance of ±5%, and includes a VPP supply of 2.5V for wordline boost. The device has a self-refresh current of approximately 30mA (typical) and an active standby current of 60mA. It also features a temperature-compensated self-refresh (TCSR) to reduce power at lower temperatures. The device is RoHS compliant and lead-free.
Typical applications include desktop and laptop PCs, servers, networking equipment, and embedded systems. The high bandwidth and low power make it ideal for memory-intensive tasks such as gaming, data analytics, and virtualization. In embedded systems, it provides reliable performance for industrial control and edge computing.
When designing with this device, ensure proper decoupling capacitors (0.1uF and 10uF) are placed near the VDD and VDDQ pins. Follow the layout guidelines in the datasheet for signal integrity, especially for the high-speed data and address lines. The ZQ pin requires a 240-ohm resistor to ground for calibration.
Alternatives de remplacement direct pour H5AN8G8NDJR — même boîtier, compatible broche à broche. Les références à boîtier différent nécessitant une retouche du PCB sont exclues.
Variantes de cette série
Modèles de la même série directement compatibles avec H5AN8G8NDJR (même facteur de forme et même empreinte) — différant par Package, Data Rate, Operating Temperature, Refresh, Organization.
Outil de comparaison rapide — sélectionnez des références alternatives pour une comparaison côte à côte :
H5AN8G8NCJR-XNC
✅ Remplacement direct✓ En stock
$30.6923 / unité
Voir la fiche technique →H5AN8G6NDJR-XNC
✅ Remplacement direct✓ En stock
$55.6818 / unité
Voir la fiche technique →H5AN8G6NCJR-VKC
✅ Remplacement direct✓ En stock
$60 / unité
Voir la fiche technique →MT40A1G8SA-062E
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.05 / unité
Voir la fiche technique →K4A8G085WB-BIWE
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$6.5 / unité
Voir la fiche technique →AS4C512M16D4A-62BCN
✅ Remplacement direct ⚠️ Spécifications non vérifiées✓ En stock
$7.2 / unité
Voir la fiche technique →H5AN8G8NDJR Valeurs maximales et caractéristiques électriques
| Type de mémoire | DDR4 SDRAM |
| Density | 8 Gb |
| Organisation de la mémoire | 1G x 8 |
| Débit de données | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) |
| VDDQ | 1.2 V |
| VPP | 2.5 V |
| Température de fonctionnement | 0°C to +95°C (Tc) |
| Boîtier | FBGA-78 (7.5x11 mm) |
| Latence CAS | 22 (typical) |
| tRCD | 22 ns |
| tRP | 22 ns |
| Burst Length | 8 and 4 (with burst chop) |
| Self-Refresh Current | 30 mA (typical) |
| Active Standby Current | 60 mA (typical) |
| RoHS | Compliant |
| Lead-Free | Yes |
Configuration des broches de H5AN8G8NDJR
| Broche A1 | VDD — Power supply |
| Broche A2 | DQ0 — Data input/output 0 |
| Broche A3 | DQ1 — Data input/output 1 |
| Broche A4 | VSS — Ground |
| Broche A5 | DQ2 — Data input/output 2 |
| Broche A6 | DQ3 — Data input/output 3 |
| Broche A7 | VDDQ — DQ power supply |
| Broche A8 | DQ4 — Data input/output 4 |
| Broche A9 | DQ5 — Data input/output 5 |
| Broche A10 | VSS — Ground |
| Broche A11 | DQ6 — Data input/output 6 |
| Broche A12 | DQ7 — Data input/output 7 |
| Broche B1 | VSS — Ground |
| Broche B2 | DQS0_t — Data strobe 0 (true) |
| Broche B3 | DQS0_c — Data strobe 0 (complement) |
| Broche B4 | VDD — Power supply |
| Broche B5 | DM0_n — Data mask 0 (active low) |
| Broche B6 | VSS — Ground |
| Broche B7 | VDDQ — DQ power supply |
| Broche B8 | DQS1_t — Data strobe 1 (true) |
| Broche B9 | DQS1_c — Data strobe 1 (complement) |
| Broche B10 | VDD — Power supply |
| Broche B11 | DM1_n — Data mask 1 (active low) |
| Broche B12 | VSS — Ground |
| Broche C1 | VDDQ — DQ power supply |
| Broche C2 | VSS — Ground |
| Broche C3 | VDDQ — DQ power supply |
| Broche C4 | VSS — Ground |
| Broche C5 | VDDQ — DQ power supply |
| Broche C6 | VSS — Ground |
| Broche C7 | VDDQ — DQ power supply |
| Broche C8 | VSS — Ground |
| Broche C9 | VDDQ — DQ power supply |
| Broche C10 | VSS — Ground |
| Broche C11 | VDDQ — DQ power supply |
| Broche C12 | VSS — Ground |
| Broche D1 | A0 — Address input 0 |
| Broche D2 | A1 — Address input 1 |
| Broche D3 | A2 — Address input 2 |
| Broche D4 | A3 — Address input 3 |
| Broche D5 | A4 — Address input 4 |
| Broche D6 | A5 — Address input 5 |
| Broche D7 | A6 — Address input 6 |
| Broche D8 | A7 — Address input 7 |
| Broche D9 | A8 — Address input 8 |
| Broche D10 | A9 — Address input 9 |
| Broche D11 | A10/AP — Address input 10 / Auto precharge |
| Broche D12 | A11 — Address input 11 |
| Broche E1 | A12/BC — Address input 12 / Burst chop |
| Broche E2 | A13 — Address input 13 |
| Broche E3 | A14 — Address input 14 |
| Broche E4 | A15 — Address input 15 |
| Broche E5 | A16 — Address input 16 |
| Broche E6 | A17 — Address input 17 |
| Broche E7 | BA0 — Bank address 0 |
| Broche E8 | BA1 — Bank address 1 |
| Broche E9 | BA2 — Bank address 2 |
| Broche E10 | BG0 — Bank group 0 |
| Broche E11 | BG1 — Bank group 1 |
| Broche E12 | VDD — Power supply |
| Broche F1 | VSS — Ground |
| Broche F2 | CK_t — Clock (true) |
| Broche F3 | CK_c — Clock (complement) |
| Broche F4 | CKE — Clock enable |
| Broche F5 | CS_n — Chip select (active low) |
| Broche F6 | ODT — On-die termination |
| Broche F7 | RAS_n — Row address strobe (active low) |
| Broche F8 | CAS_n — Column address strobe (active low) |
| Broche F9 | WE_n — Write enable (active low) |
| Broche F10 | RESET_n — Reset (active low) |
| Broche F11 | VDD — Power supply |
| Broche F12 | VSS — Ground |
| Broche G1 | VDD — Power supply |
| Broche G2 | VSS — Ground |
| Broche G3 | VDD — Power supply |
| Broche G4 | VSS — Ground |
| Broche G5 | VDD — Power supply |
| Broche G6 | VSS — Ground |
| Broche G7 | VDD — Power supply |
| Broche G8 | VSS — Ground |
| Broche G9 | VDD — Power supply |
| Broche G10 | VSS — Ground |
| Broche G11 | VDD — Power supply |
| Broche G12 | VSS — Ground |
| Broche H1 | ZQ — Calibration reference |
| Broche H2 | VPP — Wordline boost supply |
| Broche H3 | VSS — Ground |
| Broche H4 | VDD — Power supply |
| Broche H5 | VSS — Ground |
| Broche H6 | VDD — Power supply |
| Broche H7 | VSS — Ground |
| Broche H8 | VDD — Power supply |
| Broche H9 | VSS — Ground |
| Broche H10 | VDD — Power supply |
| Broche H11 | VSS — Ground |
| Broche H12 | VDD — Power supply |
Applications typiques
H5AN8G8NDJR convient pour 6 applications: Desktop and Laptop PCs, Servers and Data Centers, Networking Equipment, Embedded Systems, Gaming Consoles, Artificial Intelligence and Machine Learning.
Desktop and Laptop PCs
The H5AN8G8NDJR provides 8Gb of high-speed DDR4 memory for mainstream computing. Its 3200MT/s data rate and 1.2V operation deliver responsive performance for multitasking, gaming, and productivity. The x8 organization supports ECC in some platforms, enhancing reliability. In a dual-channel configuration, two devices provide 16GB of memory, balancing cost and performance. The FBGA-78 package allows compact module designs, fitting standard DIMM and SO-DIMM form factors.
Recommandé
Servers and Data Centers
In servers, the H5AN8G8NDJR's 8Gb density and x8 organization enable high-capacity RDIMMs and LRDIMMs with ECC. The 3200MT/s speed supports memory-intensive workloads like virtualization and databases. The device's low 1.2V operation reduces power consumption in large memory arrays. Its robust features, including CRC and write leveling, ensure signal integrity at high speeds. The 0-95°C operating range suits data center environments. Multiple devices can be combined to create 64GB or larger modules, maximizing server memory capacity.
Recommandé
Networking Equipment
The H5AN8G8NDJR is used in routers, switches, and network appliances for packet buffering and forwarding tables. Its high bandwidth (3200MT/s) handles high-throughput traffic, while the 8Gb density provides ample storage for routing tables. The low power consumption is critical for fanless designs. The device's auto self-refresh and ZQ calibration maintain data integrity in varying thermal conditions. The FBGA-78 package fits compact line cards. Its reliability makes it suitable for 24/7 operation in enterprise networking.
Recommandé
Embedded Systems
For embedded applications like industrial PCs and edge computing, the H5AN8G8NDJR offers a balance of performance and power. Its 8Gb capacity supports complex applications, while the 1.2V supply reduces heat in sealed enclosures. The device's wide temperature range (0-95°C) covers most industrial environments. The x8 organization simplifies PCB routing compared to x16. The FBGA-78 package is suitable for small form factors. Its long-term availability makes it ideal for embedded designs with extended lifecycles.
Recommandé
Gaming Consoles
The H5AN8G8NDJR delivers the high bandwidth needed for gaming consoles, supporting 4K textures and fast loading. Its 3200MT/s data rate and 8Gb density allow 16GB configurations with two devices. The low latency (CL22) reduces input lag. The device's power efficiency helps manage thermal budgets in compact consoles. The x8 organization is standard in gaming memory modules. Its reliability ensures stable performance during extended gaming sessions. The FBGA-78 package enables slim console designs.
Recommandé
Artificial Intelligence and Machine Learning
In AI/ML inference systems, the H5AN8G8NDJR provides high-bandwidth memory for model weights and intermediate data. Its 3200MT/s speed accelerates matrix operations, while the 8Gb density supports large models. The low power consumption is crucial for edge AI devices. The device's features like CRC ensure data integrity during intensive computations. The x8 organization allows efficient memory interleaving. It is used in AI accelerators and smart cameras. The FBGA-78 package fits compact AI modules.
Recommandé
Récapitulatif des produits recommandés
Données de référence d'ingénierie pour H5AN8G8NDJR — comparaison, recommandations de conception et informations de conformité.
Guide de sélection
Comparaison avec les alternatives
| Paramètre | Ce produit | H5AN8G8NCJR-XNC | H5AN8G6NDJR-XNC | MT40A1G8SA-062E | K4A8G085WB-BIWE |
|---|---|---|---|---|---|
| Package | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) |
| Brand | SK hynix | SK hynix | SK hynix | Micron Technology | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 16 | 1G x 8 | 1G x 8 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| CAS Latency | 22 | 22 | 22 | 22 | 22 |
Principaux différenciateurs
- x8 organization for ECC support (vs H5AN8G6NDJR-XNC)
- High density 8Gb in a single package (vs AS4C512M16D4A-62BCN)
- Proven SK hynix quality (vs K4A8G085WB-BIWE)
Notes de conception
Place 0.1uF and 10uF decoupling capacitors close to the VDD and VDDQ pins. Use a 240-ohm resistor on the ZQ pin for calibration. Ensure the VPP supply is clean and within 2.5V ±5%.
For 3200MT/s operation, maintain controlled impedance of 40-50 ohms for DQ/DQS lines and 50-60 ohms for address/control lines. Keep trace lengths matched within ±5mm. Use ground planes to minimize crosstalk.
The device operates up to 95°C Tc. Ensure adequate airflow or heatsinking in high-density modules. Monitor the case temperature and derate if necessary. The self-refresh current is 30mA typical, so power dissipation is low, but in arrays, heat can accumulate.
Informations de conformité
RoHS compliant per LCSC and datasheet. Not AEC-Q100 qualified as it is a memory IC for general computing.
