H5AN8G8NDJR - 8Gb DDR4 SDRAM 3200MT/s | SK hynix
Артикул: H5AN8G8NDJR ✓ Активен| Кол-во | Цена за ед. | Итого |
|---|---|---|
| 1 | $31.28 | $31,28 |
| 10 | $29.5 | $295,00 |
| 100 | $27.8 | $2.780,00 |
| 500 | $26.1 | $13.050,00 |
| 1.000 | $24.5 | $24.500,00 |
H5AN8G8NDJR Обзор
DDR4 SDRAM (Double Data Rate Fourth Generation Synchronous Dynamic Random-Access Memory) is a type of volatile memory that transfers data on both rising and falling edges of the clock, doubling the data rate of DDR3. It operates at lower voltages (1.2V vs 1.5V) and offers higher density and speed, making it the standard for modern computing. DDR4 is a key component in the memory hierarchy, sitting between the CPU and storage, and is essential for system performance in PCs, servers, and embedded systems.
The H5AN8G8NDJR features a 1G x 8 organization, providing 8Gb of memory in a single chip. It supports data rates up to 3200MT/s, with a CAS latency of 22 (typical) and a tRCD/tRP of 22ns. The device includes on-die ECC (optional) and supports a burst length of 8 and 4 with burst chop. It also features a programmable read latency (RL) and write latency (WL) for system optimization. The FBGA-78 package offers a compact footprint with a 7.5x11mm body, suitable for space-constrained designs.
Technically, the H5AN8G8NDJR uses a 20nm-class process technology, enabling high density and low power consumption. It supports a 1.2V supply with a tolerance of ±5%, and includes a VPP supply of 2.5V for wordline boost. The device has a self-refresh current of approximately 30mA (typical) and an active standby current of 60mA. It also features a temperature-compensated self-refresh (TCSR) to reduce power at lower temperatures. The device is RoHS compliant and lead-free.
Typical applications include desktop and laptop PCs, servers, networking equipment, and embedded systems. The high bandwidth and low power make it ideal for memory-intensive tasks such as gaming, data analytics, and virtualization. In embedded systems, it provides reliable performance for industrial control and edge computing.
When designing with this device, ensure proper decoupling capacitors (0.1uF and 10uF) are placed near the VDD and VDDQ pins. Follow the layout guidelines in the datasheet for signal integrity, especially for the high-speed data and address lines. The ZQ pin requires a 240-ohm resistor to ground for calibration.
Аналоги без доработки для H5AN8G8NDJR — тот же корпус, pin-to-pin совместимость. Компоненты в других корпусах, требующие переработки PCB, исключены.
Варианты в этой серии
Модели той же серии, совместимые без доработки с H5AN8G8NDJR (тот же форм-фактор и посадочное место) — отличается по Package, Data Rate, Operating Temperature, Refresh, Organization.
Инструмент быстрого сравнения — выберите альтернативные компоненты для сравнения бок о бок:
H5AN8G8NCJR-XNC
✅ Прямая замена✓ В наличии
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Открыть даташит →H5AN8G6NDJR-XNC
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Открыть даташит →H5AN8G6NCJR-VKC
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✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
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Открыть даташит →K4A8G085WB-BIWE
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
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Открыть даташит →AS4C512M16D4A-62BCN
✅ Прямая замена ⚠️ Характеристики не проверены✓ В наличии
$7.2 / шт.
Открыть даташит →H5AN8G8NDJR Максимальные параметры и электрические характеристики
| Тип памяти | DDR4 SDRAM |
| Density | 8 Gb |
| Организация памяти | 1G x 8 |
| Скорость передачи данных | 3200 MT/s |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) |
| VDDQ | 1.2 V |
| VPP | 2.5 V |
| Рабочая температура | 0°C to +95°C (Tc) |
| Корпус | FBGA-78 (7.5x11 mm) |
| Задержка CAS | 22 (typical) |
| tRCD | 22 ns |
| tRP | 22 ns |
| Burst Length | 8 and 4 (with burst chop) |
| Self-Refresh Current | 30 mA (typical) |
| Active Standby Current | 60 mA (typical) |
| RoHS | Compliant |
| Lead-Free | Yes |
Конфигурация выводов H5AN8G8NDJR
| Контакт A1 | VDD — Power supply |
| Контакт A2 | DQ0 — Data input/output 0 |
| Контакт A3 | DQ1 — Data input/output 1 |
| Контакт A4 | VSS — Ground |
| Контакт A5 | DQ2 — Data input/output 2 |
| Контакт A6 | DQ3 — Data input/output 3 |
| Контакт A7 | VDDQ — DQ power supply |
| Контакт A8 | DQ4 — Data input/output 4 |
| Контакт A9 | DQ5 — Data input/output 5 |
| Контакт A10 | VSS — Ground |
| Контакт A11 | DQ6 — Data input/output 6 |
| Контакт A12 | DQ7 — Data input/output 7 |
| Контакт B1 | VSS — Ground |
| Контакт B2 | DQS0_t — Data strobe 0 (true) |
| Контакт B3 | DQS0_c — Data strobe 0 (complement) |
| Контакт B4 | VDD — Power supply |
| Контакт B5 | DM0_n — Data mask 0 (active low) |
| Контакт B6 | VSS — Ground |
| Контакт B7 | VDDQ — DQ power supply |
| Контакт B8 | DQS1_t — Data strobe 1 (true) |
| Контакт B9 | DQS1_c — Data strobe 1 (complement) |
| Контакт B10 | VDD — Power supply |
| Контакт B11 | DM1_n — Data mask 1 (active low) |
| Контакт B12 | VSS — Ground |
| Контакт C1 | VDDQ — DQ power supply |
| Контакт C2 | VSS — Ground |
| Контакт C3 | VDDQ — DQ power supply |
| Контакт C4 | VSS — Ground |
| Контакт C5 | VDDQ — DQ power supply |
| Контакт C6 | VSS — Ground |
| Контакт C7 | VDDQ — DQ power supply |
| Контакт C8 | VSS — Ground |
| Контакт C9 | VDDQ — DQ power supply |
| Контакт C10 | VSS — Ground |
| Контакт C11 | VDDQ — DQ power supply |
| Контакт C12 | VSS — Ground |
| Контакт D1 | A0 — Address input 0 |
| Контакт D2 | A1 — Address input 1 |
| Контакт D3 | A2 — Address input 2 |
| Контакт D4 | A3 — Address input 3 |
| Контакт D5 | A4 — Address input 4 |
| Контакт D6 | A5 — Address input 5 |
| Контакт D7 | A6 — Address input 6 |
| Контакт D8 | A7 — Address input 7 |
| Контакт D9 | A8 — Address input 8 |
| Контакт D10 | A9 — Address input 9 |
| Контакт D11 | A10/AP — Address input 10 / Auto precharge |
| Контакт D12 | A11 — Address input 11 |
| Контакт E1 | A12/BC — Address input 12 / Burst chop |
| Контакт E2 | A13 — Address input 13 |
| Контакт E3 | A14 — Address input 14 |
| Контакт E4 | A15 — Address input 15 |
| Контакт E5 | A16 — Address input 16 |
| Контакт E6 | A17 — Address input 17 |
| Контакт E7 | BA0 — Bank address 0 |
| Контакт E8 | BA1 — Bank address 1 |
| Контакт E9 | BA2 — Bank address 2 |
| Контакт E10 | BG0 — Bank group 0 |
| Контакт E11 | BG1 — Bank group 1 |
| Контакт E12 | VDD — Power supply |
| Контакт F1 | VSS — Ground |
| Контакт F2 | CK_t — Clock (true) |
| Контакт F3 | CK_c — Clock (complement) |
| Контакт F4 | CKE — Clock enable |
| Контакт F5 | CS_n — Chip select (active low) |
| Контакт F6 | ODT — On-die termination |
| Контакт F7 | RAS_n — Row address strobe (active low) |
| Контакт F8 | CAS_n — Column address strobe (active low) |
| Контакт F9 | WE_n — Write enable (active low) |
| Контакт F10 | RESET_n — Reset (active low) |
| Контакт F11 | VDD — Power supply |
| Контакт F12 | VSS — Ground |
| Контакт G1 | VDD — Power supply |
| Контакт G2 | VSS — Ground |
| Контакт G3 | VDD — Power supply |
| Контакт G4 | VSS — Ground |
| Контакт G5 | VDD — Power supply |
| Контакт G6 | VSS — Ground |
| Контакт G7 | VDD — Power supply |
| Контакт G8 | VSS — Ground |
| Контакт G9 | VDD — Power supply |
| Контакт G10 | VSS — Ground |
| Контакт G11 | VDD — Power supply |
| Контакт G12 | VSS — Ground |
| Контакт H1 | ZQ — Calibration reference |
| Контакт H2 | VPP — Wordline boost supply |
| Контакт H3 | VSS — Ground |
| Контакт H4 | VDD — Power supply |
| Контакт H5 | VSS — Ground |
| Контакт H6 | VDD — Power supply |
| Контакт H7 | VSS — Ground |
| Контакт H8 | VDD — Power supply |
| Контакт H9 | VSS — Ground |
| Контакт H10 | VDD — Power supply |
| Контакт H11 | VSS — Ground |
| Контакт H12 | VDD — Power supply |
Типичное применение
H5AN8G8NDJR подходит для 6 применениеs: Desktop and Laptop PCs, Servers and Data Centers, Networking Equipment, Embedded Systems, Gaming Consoles, Artificial Intelligence and Machine Learning.
Desktop and Laptop PCs
The H5AN8G8NDJR provides 8Gb of high-speed DDR4 memory for mainstream computing. Its 3200MT/s data rate and 1.2V operation deliver responsive performance for multitasking, gaming, and productivity. The x8 organization supports ECC in some platforms, enhancing reliability. In a dual-channel configuration, two devices provide 16GB of memory, balancing cost and performance. The FBGA-78 package allows compact module designs, fitting standard DIMM and SO-DIMM form factors.
Рекомендуется
Servers and Data Centers
In servers, the H5AN8G8NDJR's 8Gb density and x8 organization enable high-capacity RDIMMs and LRDIMMs with ECC. The 3200MT/s speed supports memory-intensive workloads like virtualization and databases. The device's low 1.2V operation reduces power consumption in large memory arrays. Its robust features, including CRC and write leveling, ensure signal integrity at high speeds. The 0-95°C operating range suits data center environments. Multiple devices can be combined to create 64GB or larger modules, maximizing server memory capacity.
Рекомендуется
Networking Equipment
The H5AN8G8NDJR is used in routers, switches, and network appliances for packet buffering and forwarding tables. Its high bandwidth (3200MT/s) handles high-throughput traffic, while the 8Gb density provides ample storage for routing tables. The low power consumption is critical for fanless designs. The device's auto self-refresh and ZQ calibration maintain data integrity in varying thermal conditions. The FBGA-78 package fits compact line cards. Its reliability makes it suitable for 24/7 operation in enterprise networking.
Рекомендуется
Embedded Systems
For embedded applications like industrial PCs and edge computing, the H5AN8G8NDJR offers a balance of performance and power. Its 8Gb capacity supports complex applications, while the 1.2V supply reduces heat in sealed enclosures. The device's wide temperature range (0-95°C) covers most industrial environments. The x8 organization simplifies PCB routing compared to x16. The FBGA-78 package is suitable for small form factors. Its long-term availability makes it ideal for embedded designs with extended lifecycles.
Рекомендуется
Gaming Consoles
The H5AN8G8NDJR delivers the high bandwidth needed for gaming consoles, supporting 4K textures and fast loading. Its 3200MT/s data rate and 8Gb density allow 16GB configurations with two devices. The low latency (CL22) reduces input lag. The device's power efficiency helps manage thermal budgets in compact consoles. The x8 organization is standard in gaming memory modules. Its reliability ensures stable performance during extended gaming sessions. The FBGA-78 package enables slim console designs.
Рекомендуется
Artificial Intelligence and Machine Learning
In AI/ML inference systems, the H5AN8G8NDJR provides high-bandwidth memory for model weights and intermediate data. Its 3200MT/s speed accelerates matrix operations, while the 8Gb density supports large models. The low power consumption is crucial for edge AI devices. The device's features like CRC ensure data integrity during intensive computations. The x8 organization allows efficient memory interleaving. It is used in AI accelerators and smart cameras. The FBGA-78 package fits compact AI modules.
Рекомендуется
Сводка рекомендуемых товаров
Справочные инженерные данные для H5AN8G8NDJR — сравнение, рекомендации по проектированию и информация о соответствии.
Руководство по выбору
Сравнение с аналогами
| Параметр | Этот товар | H5AN8G8NCJR-XNC | H5AN8G6NDJR-XNC | MT40A1G8SA-062E | K4A8G085WB-BIWE |
|---|---|---|---|---|---|
| Package | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) | FBGA-78 (7.5x11 mm) |
| Brand | SK hynix | SK hynix | SK hynix | Micron Technology | Samsung Electronics |
| Density | 8 Gb | 8 Gb | 8 Gb | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 1G x 8 | 1G x 16 | 1G x 8 | 1G x 8 |
| Data Rate | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s | 3200 MT/s |
| Supply Voltage | 1.2V | 1.2V | 1.2V | 1.2V | 1.2V |
| Operating Temperature | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C | 0°C to +95°C |
| CAS Latency | 22 | 22 | 22 | 22 | 22 |
Ключевые отличия
- x8 organization for ECC support (против H5AN8G6NDJR-XNC)
- High density 8Gb in a single package (против AS4C512M16D4A-62BCN)
- Proven SK hynix quality (против K4A8G085WB-BIWE)
Заметки по проектированию
Place 0.1uF and 10uF decoupling capacitors close to the VDD and VDDQ pins. Use a 240-ohm resistor on the ZQ pin for calibration. Ensure the VPP supply is clean and within 2.5V ±5%.
For 3200MT/s operation, maintain controlled impedance of 40-50 ohms for DQ/DQS lines and 50-60 ohms for address/control lines. Keep trace lengths matched within ±5mm. Use ground planes to minimize crosstalk.
The device operates up to 95°C Tc. Ensure adequate airflow or heatsinking in high-density modules. Monitor the case temperature and derate if necessary. The self-refresh current is 30mA typical, so power dissipation is low, but in arrays, heat can accumulate.
Информация о соответствии
RoHS compliant per LCSC and datasheet. Not AEC-Q100 qualified as it is a memory IC for general computing.
