H5ANAG6NCMR-VKI - 16Gb DDR4 SDRAM x16, 1.2V FBGA | SK Hynix
N.º da peça: H5ANAG6NCMR-VKI ✓ Ativo| Qtd. | Preço unitário | Total |
|---|---|---|
| 1 | $1 | $1,00 |
| 10 | $0 | $0,00 |
| 100 | $0 | $0,00 |
| 500 | $0 | $0,00 |
| 1.000 | $0 | $0,00 |
H5ANAG6NCMR-VKI Visão geral
A DDR4 SDRAM is a volatile memory device that stores data as charge on capacitors within a dense CMOS cell array, synchronized to an external clock to transfer data on both rising and falling clock edges. In the memory hierarchy, the DDR4 DRAM sits below CPU cache and above storage, serving as the main-system-memory tier of computing platforms. DDR4 succeeded DDR3 with lower operating voltage (1.2V vs 1.5V), higher data rates, bank-group architecture, and improved signal integrity features such as DBI and CA parity.
Key features of the H5ANAG6NCMR family include 16Gb density (2GB per chip), a 16-bit wide data interface, 1.2V core supply, 8n bank architecture with bank groups, on-die termination (ODT), DLL for precise data output timing, and JEDEC-standard DDR4 command and address signaling. The large single-chip density reduces component count in multi-DRAM systems, lowering board area and simplifying power distribution.
Architecturally, the device uses SK Hynix CMOS DRAM process technology with a bank-group structure that allows faster back-to-back accesses to different bank groups, sustaining high effective bandwidth across the 16-bit bus. Speed-bin variants in the family (UH/VK/WM/XN) cover a range of DDR4 data-rate classes, letting system designers trade cost versus performance.
Typical applications include desktop and notebook PC main memory, industrial PCs and embedded controllers, networking equipment line-card memory, and consumer electronics requiring large DRAM density. The industrial temperature variant suits factory automation and outdoor telecom hardware.
Design considerations: DDR4 signal integrity requires length-matched fly-by routing of CK/CA lines, precise ODT calibration, and VTT termination supplied by a dedicated termination regulator.
This page synthesizes distributor stock data, family drop-in variants, and practical DDR4 design notes not found in a single datasheet view.
Alternativas drop-in para H5ANAG6NCMR-VKI — mesmo encapsulamento, compatível pino a pino. Peças de encapsulamento diferente que exigem retrabalho na PCB são excluídas.
Variantes desta série
Modelos da mesma série compatíveis como drop-in com H5ANAG6NCMR-VKI (mesmo formato e footprint) — diferindo em Technology, Memory Type, Package, Data Rate, Memory Size.
Ferramenta de comparação rápida — selecione peças alternativas para comparação lado a lado:
H5ANAG6NCMR-XNI
✅ Drop-In✓ Em estoque
$4.95 / unidade
Ver ficha técnica →H5ANAG6NCR-XNC
✅ Drop-In✓ Em estoque
$68.18 / unidade
Ver ficha técnica →H5ANAG6NCJR-XNC
✅ Drop-In✓ Em estoque
$84.97 / unidade
Ver ficha técnica →H5ANAG6NCR-VKC
✅ Drop-In✓ Em estoque
Consulte o preço
Ver ficha técnica →H5ANAG8NCMR-VKI
✅ Drop-In✓ Em estoque
Consulte o preço
Ver ficha técnica →H5ANAG8NCMR-XNI
✅ Drop-In✓ Em estoque
$4.15 / unidade
Ver ficha técnica →H5ANAG6NCMR-VKI Classificações máximas e características elétricas
| Tipo de memória | DDR4 SDRAM (volatile) |
| Tamanho da memória | 16 Gb (2 GB) |
| Memory Organization | x16 |
| Tensão de alimentação | 1.2 V |
| Speed Grade | VK |
| Technology | CMOS DRAM |
| Interface | Parallel |
| Encapsulamento | FBGA, surface mount |
| Tipo de montagem | Surface Mount |
| Product Status | Active |
| Power Class | Normal Power |
| Packaging | Tray / Plateau |
| Family Speed Options | UH / VK / WM / XN |
Guia de Configuração de Pinos do H5ANAG6NCMR-VKI fbga, surface mount
Configuração de pinos para H5ANAG6NCMR-VKI (pacote fbga, surface mount). Este CI digital inclui GPIO, interfaces de comunicação (UART, SPI, I2C) e pinos de alimentação. Consulte o datasheet do fabricante para funções alternativas dos pinos e opções de configuração. Essencial para projeto de sistemas embarcados e layout de PCB.
Nenhum dado detalhado de pinagem disponível para H5ANAG6NCMR-VKI.
Consulte a ficha técnica para a configuração completa dos pinos.
Aplicações típicas
H5ANAG6NCMR-VKI é adequado para 6 aplicaçãos: Desktop and Notebook PC Main Memory, Industrial PCs and Embedded Controllers, Networking Equipment Line-Card Memory, Consumer Electronics and Smart TVs, Test and Measurement Instrumentation, Automotive-adjacent and Rugged Computing.
Desktop and Notebook PC Main Memory
The H5ANAG6NCMR-VKI serves as main system memory in desktop and notebook platforms, where its 16Gb density and x16 organization allow designers to build 4GB-8GB channels with only two to four chips. Operating at 1.2V per the JEDEC DDR4 specification, it cuts memory subsystem power roughly 20% versus DDR3 at 1.5V, directly extending battery life in portable PCs. The VK speed grade provides the DDR4-2666-class bandwidth required by mainstream CPU integrated memory controllers. Because it uses the standard DDR4 FBGA footprint, it mounts directly on SO-DIMM and board-level memory layouts, and its bank-group architecture sustains high sequential bandwidth for multitasking workloads.
Recomendado
Industrial PCs and Embedded Controllers
The industrial temperature suffix of the H5ANAG6NCMR-VKI makes it a strong fit for industrial PCs, machine-vision controllers, and factory automation systems that operate beyond commercial temperature limits. A single 16Gb device delivers 2GB of DDR4 memory, letting embedded boards reach 4GB with just two chips - critical in space-constrained 3.5-inch and COM Express form factors. The 1.2V core reduces heat dissipation inside sealed fanless enclosures, improving long-term reliability. DDR4's on-die termination and CA parity features maintain signal integrity across the longer, impedance-controlled traces typical of industrial backplanes, while the x16 bus simplifies layout versus multiple x8 parts.
Recomendado
Networking Equipment Line-Card Memory
Routers, switches, and telecom line cards use the H5ANAG6NCMR-VKI as packet-buffer and lookup-table memory, where 16Gb per chip minimizes component count on dense cards. The VK speed grade supplies the DDR4-2666-class bandwidth needed to keep pace with multi-gigabit packet streams, and the x16 organization provides wide words that match packet buffer descriptors. DDR4's bank-group architecture enables fast back-to-back accesses across bank groups, which matches the random access pattern of packet buffering better than DDR3. The industrial temperature option suits outdoor telecom cabinets, and the standard FBGA footprint enables second-source layout compatibility across the SK Hynix 16Gb family.
Recomendado
Consumer Electronics and Smart TVs
Set-top boxes, smart TVs, and game consoles employ the H5ANAG6NCMR-VKI to supply the multi-gigabyte DRAM pool demanded by 4K video decoding, graphics compositing, and application runtimes. One 16Gb chip provides 2GB - often sufficient for mainstream streaming platforms - while two devices reach 4GB for flagship models. The 1.2V operation keeps enclosure thermals low in fanless TV designs, and the compact FBGA package fits tight boards behind display panels. The x16 wide bus pairs naturally with SoC memory controllers optimized for 32-bit channels, and the VK speed grade sustains the sustained read bandwidth required for smooth 4K60 HEVC decode with headroom.
Recomendado
Test and Measurement Instrumentation
Oscilloscopes, logic analyzers, and signal generators use the H5ANAG6NCMR-VKI as deep acquisition memory, where per-device 16Gb density extends record length - a headline instrument specification. A bank of eight devices yields 16GB of sample memory, enabling long captures at high sample rates. The x16 organization matches the 64-bit and 128-bit bus widths of FPGA-based acquisition engines, and DDR4 bank groups keep effective bandwidth high under the streaming workloads these instruments generate. Industrial temperature variants survive bench environments without forced cooling, and the JEDEC-standard DDR4 interface connects directly to FPGA memory controllers from all major vendors, shortening design cycles.
Recomendado
Automotive-adjacent and Rugged Computing
Rugged vehicle telematics, rail computing, and defense-adjacent platforms specify the industrial-grade H5ANAG6NCMR-VKI for main memory where commercial-grade DRAM cannot meet environmental requirements. The -VKI industrial suffix and SK Hynix's confluence of low 1.2V power and dense 16Gb integration allow sealed, passively cooled enclosures to deliver multi-GB memory without fans. The x16 organization reduces chip count, which improves mean-time-between-failure metrics in vibration-prone installations, and soldered FBGA mounting eliminates socket reliability issues found with module-based memory. Designers pair it with wide-temperature power supervisors and conformal coating to meet the full ruggedization envelope of the target platform.
Recomendado
Resumo dos produtos recomendados
Dados de referência de engenharia para H5ANAG6NCMR-VKI — comparação, orientação de projeto e informações de conformidade.
Guia de seleção
Comparação com alternativas
| Parâmetro | Este produto | H5ANAG6NCMR-XNI | H5ANAG6NCR-XNC | H5ANAG8NCMR-VKI | H5ANAG8NCMR-XNI |
|---|---|---|---|---|---|
| Package | FBGA | FBGA - same | FBGA - same | FBGA family - same footprint, x8 ball map | FBGA family - same footprint, x8 ball map |
| Brand | SK Hynix | SK Hynix | SK Hynix | SK Hynix | SK Hynix |
| Memory Size | 16 Gb | 16 Gb | 16 Gb | 16 Gb | 16 Gb |
| Organization | x16 | x16 | x16 | x8 | x8 |
| Technology | DDR4 | DDR4 | DDR4 | DDR4 | DDR4 |
| Supply Voltage | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| Speed Grade | VK | XN (faster) | XN (faster) | VK (same) | XN (faster) |
| Temperature Grade | Industrial (-I) | Industrial (-I) | Commercial (-C) | Industrial (-I) | Industrial (-I) |
| Lifecycle Status | Active | Active | Active | Active | Active |
Principais diferenciais
- Industrial temperature rating (vs H5ANAG6NCR-XNC)
- Wide x16 data bus per chip (vs H5ANAG8NCMR-VKI)
- Cost-optimized VK speed bin (vs H5ANAG6NCMR-XNI)
Notas de projeto
DDR4 fly-by routing: route CK, CS, CA[5:0], and RST_n in fly-by topology across all DRAM devices, with per-byte length matching on DQ/DM/DQS within JEDEC-recommended skews. Keep impedance at 40 ohms for single-ended and 80 ohms differential. The x16 organization of H5ANAG6NCMR-VKI means two byte lanes per chip - maintain tight DQS-DQ length matching per lane to pass write leveling and read training in the memory controller.
Supply the 1.2V VDD rail with a DDR4-capable switching regulator (typically 3-6A per chip at full bandwidth) and provide a separate VTT termination rail at 0.6V using a dedicated termination regulator such as a sink-source LDO or buck with VTT tracking. Estimate: at 1.2V, each 16Gb device during active bursts draws on the order of hundreds of milliamps; size VTT for the full address/command plus data-line termination current. Decouple with a network of 10uF bulk plus 0.1uF per-pin ceramics.
Do not assume x8 and x16 DDR4 parts are interchangeable on the same footprint: H5ANAG6NCMR-VKI (x16) and H5ANAG8NCMR-VKI (x8) use different JEDEC ball maps. Also verify speed-bin programming - substituting an -XN variant for -VK requires updating CAS latency, refresh, and timing registers in the controller. Finally, run memory-controller training (write leveling, read gating, VREF training) at the target temperature extremes since industrial (-I) parts span wider ranges than commercial grades.
Informações de conformidade
Compliance data was not present in the provided web sources; request manufacturer compliance certificates from SK Hynix or XAIPART sales.
