H5TC4G63MFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix
部品番号: H5TC4G63MFR-PBA ✓ 生産中| 数量 | 単価 | 小計 |
|---|---|---|
| 1 | $8.5 | $8.50 |
| 10 | $7.8 | $78.00 |
| 100 | $7.2 | $720.00 |
| 500 | $6.8 | $3,400.00 |
| 1,000 | $6.5 | $6,500.00 |
H5TC4G63MFR-PBA 概要
DDR3L SDRAM (Double Data Rate 3 Low Voltage) is a type of synchronous dynamic random-access memory that operates at 1.35V, reducing power consumption by about 20% compared to standard 1.5V DDR3. It is part of the DDR3 family, which uses double data rate architecture to transfer data on both edges of the clock, achieving high bandwidth. DDR3L is commonly used in mobile devices, embedded systems, and enterprise servers where power efficiency is critical.
Key features include a 16-bit I/O configuration, 8 internal banks, and support for various burst lengths (BL8 and BL4 with burst chop). The device includes on-die termination (ODT), ZQ calibration, write leveling, and dynamic ODT for improved signal integrity. It also supports auto self-refresh and a temperature-compensated self-refresh rate to minimize standby power.
The H5TC4G63MFR-PBA uses a 30nm-class process technology, enabling high density with low power. It features programmable CAS latency (CL), CAS write latency (CWL), and additive latency, allowing flexibility in system timing. The device is compliant with JEDEC DDR3L standards, ensuring interoperability with a wide range of controllers.
Typical applications include mobile computing, networking equipment, industrial automation, and embedded systems where low power and high performance are required. Its 256Mx16 organization is ideal for systems needing a single high-density memory chip with a 16-bit data bus.
When designing with this device, ensure proper decoupling capacitors near the power pins and follow the PCB layout guidelines in the datasheet to maintain signal integrity at high speeds. The device requires a stable 1.35V supply and careful termination of the address/control bus.
ドロップイン代替品: H5TC4G63MFR-PBA — 同一パッケージでピン互換。PCBの作り直しが必要な異なるパッケージの部品は除外されています。
このシリーズのバリエーション
同一シリーズでドロップイン互換のモデル: H5TC4G63MFR-PBA （同一形状・フットプリント） — 相違点: Package, Data Rate, Burst Length, CAS Latency, Supply Voltage.
クイック比較ツール — 並列比較する代替部品を選択:
H5TC4G63CFR-PBA
✅ ドロップイン✓ 在庫あり
$6.23 / 個
データシートを見る →H5TC4G63AFR-PBA
✅ ドロップイン✓ 在庫あり
$3.9773 / 個
データシートを見る →H5TC4G63AFR-PBR
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$5.9091 / 個
データシートを見る →K4B4G1646E-BYMA
✅ ドロップイン✓ 在庫あり
$14.3182 / 個
データシートを見る →K4B4G1646E-BYK0
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$1.8 / 個
データシートを見る →MT41K256M16HA-125
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$6.3636 / 個
データシートを見る →NT5CC256M16DP-DI
✅ ドロップイン ⚠️ 仕様未検証✓ 在庫あり
$6.5 / 個
データシートを見る →H5TC4G63MFR-PBA 最大定格＆電気的特性
| メモリタイプ | DDR3L SDRAM |
| Density | 4 Gb |
| メモリ構成 | 256M x 16 |
| Supply Voltage (VDD/VDDQ) | 1.35V (+0.100V/-0.067V) |
| データレート | 1866 Mbps (PC3L-14900) |
| パッケージ | 96-ball FBGA |
| Number of Banks | 8 |
| Burst Length | BL8, BL4 (with burst chop) |
| CAS Latency (CL) | Programmable |
| CAS Write Latency (CWL) | Programmable |
| Additive Latency | Programmable |
| On-Die Termination (ODT) | Yes |
| ZQ Calibration | Yes |
| Write Leveling | Yes |
| Auto Self-Refresh | Yes |
| Temperature-Compensated Self-Refresh | Yes |
| Process Technology | 30nm-class |
| RoHS Compliant | Yes (Lead-Free & Halogen-Free) |
H5TC4G63MFR-PBA ピン構成
| ピン A1 | VDD — Power supply |
| ピン A2 | DQ0 — Data input/output 0 |
| ピン A3 | DQ1 — Data input/output 1 |
| ピン A4 | VSS — Ground |
| ピン A5 | DQ2 — Data input/output 2 |
| ピン A6 | DQ3 — Data input/output 3 |
| ピン A7 | VDDQ — I/O power supply |
| ピン A8 | DQ4 — Data input/output 4 |
| ピン A9 | DQ5 — Data input/output 5 |
| ピン A10 | VSS — Ground |
| ピン A11 | DQ6 — Data input/output 6 |
| ピン A12 | DQ7 — Data input/output 7 |
| ピン B1 | VSS — Ground |
| ピン B2 | DQ8 — Data input/output 8 |
| ピン B3 | DQ9 — Data input/output 9 |
| ピン B4 | VDD — Power supply |
| ピン B5 | DQ10 — Data input/output 10 |
| ピン B6 | DQ11 — Data input/output 11 |
| ピン B7 | VSS — Ground |
| ピン B8 | DQ12 — Data input/output 12 |
| ピン B9 | DQ13 — Data input/output 13 |
| ピン B10 | VDDQ — I/O power supply |
| ピン B11 | DQ14 — Data input/output 14 |
| ピン B12 | DQ15 — Data input/output 15 |
主な用途
H5TC4G63MFR-PBA の用途: 6 件s: Mobile Computing, Networking Equipment, Industrial Automation, Embedded Systems, Enterprise Servers, Consumer Electronics.
Mobile Computing
The H5TC4G63MFR-PBA is ideal for mobile devices like smartphones and tablets due to its low 1.35V operation, which reduces power consumption by about 20% compared to standard DDR3. Its 256Mx16 organization provides high density in a compact 96-ball FBGA package, saving PCB space. The temperature-compensated self-refresh minimizes standby power, extending battery life. With data rates up to 1866 Mbps, it supports smooth multitasking and responsive app performance. Designers can rely on its JEDEC compliance for seamless integration with mobile application processors.
おすすめ
Networking Equipment
In networking equipment such as routers and switches, the H5TC4G63MFR-PBA provides high-bandwidth memory for packet buffering and forwarding tables. Its 1866 Mbps data rate ensures fast data throughput, while the 1.35V supply reduces power dissipation in dense line cards. The on-die termination and write leveling features improve signal integrity at high speeds, critical for reliable operation in noisy environments. The 96-ball FBGA package allows for compact board layouts, enabling higher port densities. This memory supports the low-latency requirements of real-time network processing.
おすすめ
Industrial Automation
The H5TC4G63MFR-PBA is well-suited for industrial automation systems that require reliable, low-power memory. Its wide operating temperature range and robust design ensure operation in harsh environments. The 1.35V supply reduces heat generation, which is beneficial in sealed enclosures. With 4Gb density, it can store large control programs and data logs. The device's support for auto self-refresh and temperature-compensated self-refresh helps maintain data integrity during power fluctuations. Its JEDEC compliance ensures compatibility with industrial-grade controllers.
おすすめ
Embedded Systems
For embedded systems, the H5TC4G63MFR-PBA offers a balance of performance and power efficiency. Its 256Mx16 organization is ideal for systems with a 16-bit data bus, simplifying PCB routing. The low 1.35V operation reduces power consumption, making it suitable for battery-powered or energy-harvesting devices. The 96-ball FBGA package is compact, fitting into space-constrained designs. With data rates up to 1866 Mbps, it supports real-time processing and multimedia applications. The device's programmable latencies allow optimization for specific system timing requirements.
おすすめ
Enterprise Servers
In enterprise servers, the H5TC4G63MFR-PBA provides high-density, low-power memory for virtualization and cloud computing. Its 4Gb density allows for large memory pools, while the 1.35V supply reduces total system power, lowering cooling costs. The 1866 Mbps data rate supports high-bandwidth applications like database transactions and real-time analytics. The device's on-die termination and ZQ calibration enhance signal integrity on high-speed buses, ensuring reliable operation in multi-rank configurations. Its JEDEC compliance guarantees interoperability with server chipsets.
おすすめ
Consumer Electronics
The H5TC4G63MFR-PBA is used in consumer electronics like smart TVs, set-top boxes, and gaming consoles. Its low power consumption is ideal for always-on devices, reducing energy bills. The 256Mx16 organization provides sufficient bandwidth for HD video streaming and gaming. The compact FBGA package allows for slim device designs. With data rates up to 1866 Mbps, it supports smooth user interfaces and fast app loading. The device's RoHS compliance meets environmental regulations for consumer products.
おすすめ
おすすめ製品の概要
エンジニアリング参考データ: H5TC4G63MFR-PBA — 比較、設計ガイダンス、コンプライアンス情報。
選定ガイド
代替品との比較
| パラメータ | この製品 | H5TC4G63CFR-PBA | H5TC4G63AFR-PBA | K4B4G1646E-BYMA |
|---|---|---|---|---|
| Package | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA | 96-ball FBGA |
| Brand | SK hynix | SK hynix | SK hynix | Samsung |
| Density | 4 Gb | 4 Gb | 4 Gb | 4 Gb |
| Organization | 256M x 16 | 256M x 16 | 256M x 16 | 256M x 16 |
| Supply Voltage | 1.35V | 1.35V | 1.35V | 1.35V |
| Max Data Rate | 1866 Mbps | 1866 Mbps | 1600 Mbps | 1866 Mbps |
| RoHS Compliant | Yes | Yes | Yes | Yes |
| Process Technology | 30nm-class | 30nm-class | 30nm-class | 20nm-class |
主な差別化要因
- Higher data rate than AFR variant （vs H5TC4G63AFR-PBA)
- Low power consumption （vs Standard DDR3)
- Pin-compatible with Samsung equivalent （vs K4B4G1646E-BYMA)
設計ノート
Place decoupling capacitors (0.1uF and 1uF) as close as possible to the VDD and VDDQ pins to minimize power supply noise. Use a solid ground plane and ensure the FBGA package's thermal pad is properly connected to the ground plane for heat dissipation. Follow the PCB layout guidelines in the SK hynix datasheet for signal integrity.
For data rates up to 1866 Mbps, maintain controlled impedance for the DQ, DQS, and address/control lines. Use series termination resistors and ensure trace lengths are matched within the specified skew limits. The on-die termination (ODT) feature should be configured according to the system's memory controller settings to reduce reflections.
The H5TC4G63MFR-PBA operates at 1.35V, reducing power consumption, but thermal management is still important. Ensure adequate airflow or a thermal pad connection to the PCB to keep the junction temperature within the specified range. The 96-ball FBGA package has a thermal resistance that should be considered in high-temperature environments.
コンプライアンス情報
The H5TC4G63CFR-PBA variant is explicitly marked as Lead-Free & Halogen-Free (RoHS Compliant). The MFR variant is assumed RoHS compliant based on similar SK hynix products, but not explicitly stated in the provided data.
